2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)最新文献_第8页

Impedimetric quantification of the density of suspending Trichomonas vaginalis 阴道毛滴虫悬浮体密度的阻抗法测定

2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2016-04-01 DOI: 10.1109/NEMS.2016.7758297

Ming-Jie Chen, Chia-Hao Huang, K. Lei, Wei-Hung Cheng, Petrus Tang

引用次数: 0

Fabrication of a multilayer spiral coil by selective bonding, debonding and MEMS technologies 采用选择性键合、去键合和MEMS技术制备多层螺旋线圈

2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2016-04-01 DOI: 10.1109/NEMS.2016.7758277

Tim Schroeder, J. Froemel, Shuji Tanaka, T. Gessner

引用次数: 2

CMOS MEMS infrared source based on black silicon 基于黑硅的CMOS MEMS红外源

2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2016-04-01 DOI: 10.1109/NEMS.2016.7758232

Weibing Liu, A. Ming, Yaohui Ren, Qiu-lin Tan, W. Ou, Xilong Sun, Weibing Wang, Dapeng Chen, J. Xiong

引用次数: 4

An experimental and analytical method to observe the polysilicon Nanowire mosfet threshold voltage 一种观察多晶硅纳米线mosfet阈值电压的实验与分析方法

2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2016-04-01 DOI: 10.1109/NEMS.2016.7758213

G. Sheu, Shao-Ming Yang, Aanand, Syed Sarwar Imam, Ming-Jen Fan, S. Lu

{"title":"An experimental and analytical method to observe the polysilicon Nanowire mosfet threshold voltage","authors":"G. Sheu, Shao-Ming Yang, Aanand, Syed Sarwar Imam, Ming-Jen Fan, S. Lu","doi":"10.1109/NEMS.2016.7758213","DOIUrl":"https://doi.org/10.1109/NEMS.2016.7758213","url":null,"abstract":"A new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. It was experimentally found that the saturation current shows the sensitivity of the Nano-wire MOSFETs if the conventional method fails to show the sensitivity depending upon the threshold voltage of Nano-wire MOSFET. It shows that the present method offers advantage over previous extraction procedure which use trans-conductance curve in the saturation mode, and the threshold voltage is determined by the intercept of curve. In addition to show how compact model for the Id-Vg characteristics are numerically evaluated and examined. The drain and gate bias dependencies of device current are shown. Also the model we proposed fits to the silicon data. Our experimental results support the model which we proposed in this paper. The drain current measured in saturation region can easily show the change in current level at different conditions but the convention theory for the linear region is difficult to do for sensitivity test of Nano-wire.","PeriodicalId":150449,"journal":{"name":"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121993077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

CNT handling with van der Waals force inside a SEM for FET application 碳纳米管处理与范德华力在SEM中的FET应用

2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2016-04-01 DOI: 10.1109/NEMS.2016.7758211

Yaqiong Wang, Zhan Yang, Tao Chen, Li-jun Yang, Lining Sun, T. Fukuda

引用次数: 5

Design and simulation of a thermal flow sensor for gravity-driven microfluidic applications 重力驱动微流体热流传感器的设计与仿真

2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2016-04-01 DOI: 10.1109/NEMS.2016.7758214

Antti-Juhana Maki, A. Kontunen, Tomi Ryynänen, J. Verho, J. Kreutzer, J. Lekkala, P. Kallio

引用次数: 0

Design of CMOS-MEMS infrared emitter arrays CMOS-MEMS红外发射阵列的设计

2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2016-04-01 DOI: 10.1109/NEMS.2016.7758284

Zhengxi Cheng, H. Toshiyoshi

{"title":"Design of CMOS-MEMS infrared emitter arrays","authors":"Zhengxi Cheng, H. Toshiyoshi","doi":"10.1109/NEMS.2016.7758284","DOIUrl":"https://doi.org/10.1109/NEMS.2016.7758284","url":null,"abstract":"This paper presents a new design of complementary metal-oxide-semiconductor-microelectromechanical systems (CMOS-MEMS) infrared emitter arrays integrated with metamaterial absorbers (MA). The infrared emitter array is a key IR thermal radiation source for gas sensors. The IR emitter arrays are implemented using the standard CSMC 0.5 μm 2P3M CMOS process. Three different shape of micro emitters are designed with 2 different thin film layers stacks, without and with metamaterial absorbers, for each shape. Micro structures are released from Si substrate through the post-CMOS dielectric dry etching and bulk silicon wet etching. Read-in circuit is also integrated with each 8×8 scale emitter array. Steady state thermal responses and dynamic thermal responses are simulated through multi-physics coupling finite element method (FEM), then radiation responses are calculated with a Matlab program based on thermal responses. Emissivity of emitters are also calculated through FEM simulation, which shows that the integration of metamaterial absorbers is an effective way to increases emissivity in both short and long infrared wavebands.","PeriodicalId":150449,"journal":{"name":"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131158933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Continuous Wave Terahertz Signal Generator based on Difference Frequency Generation in Gallium Phosphide crystal and its applications for spectroscopy 基于磷化镓晶体差频产生的连续波太赫兹信号发生器及其光谱学应用

2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2016-04-01 DOI: 10.1109/NEMS.2016.7758323

Tetsuo Sasaki, T. Tanabe, T. Sakamoto, J. Nishizawa

{"title":"Continuous Wave Terahertz Signal Generator based on Difference Frequency Generation in Gallium Phosphide crystal and its applications for spectroscopy","authors":"Tetsuo Sasaki, T. Tanabe, T. Sakamoto, J. Nishizawa","doi":"10.1109/NEMS.2016.7758323","DOIUrl":"https://doi.org/10.1109/NEMS.2016.7758323","url":null,"abstract":"We have developed a wide frequency tunable Continuous Wave (CW) Terahertz (THz) Signal Generator (SG) on the principle of Difference Frequency Generation (DFG) in a Gallium Phosphide (GaP) crystal. The CW THz SG has the merits of high resolution, high accuracy, wide dynamic range, high stability, high durability, easy operation/maintenance, and low cost. Combining the CW THz SG as a light source with a superconducting Transition Edge Sensor (TES) bolometer cooled by a pulse tube refrigerator, the spectrometer working as a non-stop system could be realized. As we could have increased the THz output power up to 0.1 μW at the sacrifice of lack of frequency resolution, it is now possible to apply a pyroelectric detector or a bolometer camera at room temperature operation for spectrometer or monochromatic imaging. Accurate THz spectrometer could be used for evaluation of organic crystals like as pharmaceuticals. One of the reasons for underutilization of THz spectroscopy is that most of the absorptions observed in THz range are not assigned to vibrational modes. We have developed a technique to clarify them by comparing polarization dependent spectra with Density Function Theory (DFT) calculation results for pharmaceutical single crystals.","PeriodicalId":150449,"journal":{"name":"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114302061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Wafer-level technology for integration of carbon nanotubes into micro-electro-mechanical systems

2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2016-04-01 DOI: 10.1109/NEMS.2016.7758322

J. Bonitz, Simon Böttger, S. Hermann, S. Schulz, T. Gessner, S. Hartmann, B. Wunderle

引用次数: 0

Characterization of solid UV curable 3D printer resins for biological applications 生物用途固体UV固化3D打印机树脂的表征

2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2016-04-01 DOI: 10.1109/NEMS.2016.7758255

S. Sivashankar, Sumeyra Agambayev, U. Buttner, K. Salama

引用次数: 6