{"title":"Comparison of SF/sub 6//N/sub 2/ and SF/sub 6//CO/sub 2/ gas mixtures based on the figure-of-merit concept","authors":"Y. Qiu, S. Chen, Y. Liu, E. Kuffel","doi":"10.1109/CEIDP.1988.26348","DOIUrl":"https://doi.org/10.1109/CEIDP.1988.26348","url":null,"abstract":"The dielectric strengths of SF/sub 6//N/sub 2/ and SF/sub 6//CO/sub 2/ gas mixtures, both with a mixing ratio of 50/50, were measured in a plane-parallel gap with a spherical protrusion on the high-voltage electrode surface, and in a gas-impregnated film insulation system with a mid-dielectric void. In both instances the dielectric strength of SF/sub 6//CO/sub 2/ was higher than that of SF/sub 6//N/sub 2/, in contrast to a uniform or quasi-uniform field gap at atmospheric pressure where SF/sub 6//N/sub 2/ is superior to SF/sub 6//CO/sub 2/. The experimental results were in good agreement with calculations using the figure-of-merit values for these two gas mixtures.<<ETX>>","PeriodicalId":149735,"journal":{"name":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131736925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Charge injection and storage in cross-linked polyethylene insulated cable","authors":"A. Pattullo, D. Das-Gupta, D. Cooper","doi":"10.1109/CEIDP.1988.26326","DOIUrl":"https://doi.org/10.1109/CEIDP.1988.26326","url":null,"abstract":"The authors present measurements of the trapped charge in short samples of commercial XLPE (cross-linked polyethylene) insulated power cable. Charge injection was investigated for both AC and DC electric stressing of the samples, for various conditions of temperature and gaseous environment. The injected space charge was examined using three techniques: thermally stimulated discharge current (TSDC), field-assisted TSDC, and the thermal transient current method. These results are compared and the viability of the latter, nondestructive technique to monitor the process of aging in commercial cables is discussed. The presence of a space-charge peak at 60 degrees C in prestressed XLPE insulation is clearly seen using the TSDC method. Field-assisted TSDC illustrates strong ionic conduction at higher temperatures.<<ETX>>","PeriodicalId":149735,"journal":{"name":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","volume":"30 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133977710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiao-long Cao, R. Fouracre, S. Gedeon, D.J. Tedford, H.M. Banford
{"title":"The possible influence of charge injection on the electrical properties of an epoxy resin","authors":"Xiao-long Cao, R. Fouracre, S. Gedeon, D.J. Tedford, H.M. Banford","doi":"10.1109/CEIDP.1988.26376","DOIUrl":"https://doi.org/10.1109/CEIDP.1988.26376","url":null,"abstract":"The conductivity of the epoxy resin system MY750/DDSA from low to high field was measured in the temperature range of 20 to 70 degrees C. Ionic conduction was identified as the predominant conduction process. Electronic charge injection was also observed using thermally stimulated discharge current measurements.<<ETX>>","PeriodicalId":149735,"journal":{"name":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","volume":"366 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133191637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Corona at negative impulse stress in SF/sub 6/ and SF/sub 6/-N/sub 2/-mixtures","authors":"W. Pfeiffer, H. Welke","doi":"10.1109/CEIDP.1988.26338","DOIUrl":"https://doi.org/10.1109/CEIDP.1988.26338","url":null,"abstract":"Measurements of the corona onset voltage for negative impulse stress, single and repeating pulses, in SF/sub 6/-N/sub 2/ mixtures are compared with the DC-corona onset voltage. It is shown that the impulse corona onset voltage is some percent lower. Exceptions to this behaviour have been detected only for higher pressures (0.28-0.3 MPa) and a high content of SF/sub 6/ (above 75%). Whenever impulse corona could be detected, it started always during the first pulse. The first detectable corona pulse started 30 ns after the beginning of the voltage stress.<<ETX>>","PeriodicalId":149735,"journal":{"name":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134647604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermally grown fatty acid films on semiconductors","authors":"V. K. Agarwal, F. Lin, R. Smith","doi":"10.1109/CEIDP.1988.26334","DOIUrl":"https://doi.org/10.1109/CEIDP.1988.26334","url":null,"abstract":"The authors report preliminary results on the capacitance versus voltage (C-V) characteristics of MIS devices containing thermally grown fatty-acid films as insulators. A comparative study is carried out between the C-V plots of devices with Si-SiO/sub 2/ and with Si-SiO/sub 2/-fatty-acid film interfaces. The authors also discuss results on the DC breakdown behavior of these films in metal-insulator-metal type devices. If the films are annealed thermally or electrically after deposition, their breakdown fields are significantly higher than those on unannealed (as-grown) films. It is believed that the annealing reduces the density of defects in these films leading to higher breakdown fields.<<ETX>>","PeriodicalId":149735,"journal":{"name":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115096682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The onset of electrohydrodynamic motion in non-polar liquids","authors":"J. Sheshakamal, J. Cross","doi":"10.1109/CEIDP.1988.26345","DOIUrl":"https://doi.org/10.1109/CEIDP.1988.26345","url":null,"abstract":"Experiments were conducted to investigate the onset of liquid motion, and hence electroconvection, with the application of step voltage. It is necessary to distinguish between pure conduction (no liquid motion) and convection-assisted conduction (enhanced by the liquid motion). To separate these two mechanisms, experiments were carried out using optical and electrical methods, and the delay time necessary for the liquid motion, transit time, and the apparent velocity of charge carriers were measured. Studies based on optical measurements indicate the delay time necessary for the onset of electrohydrodynamic instability. The transient current curve does not show any discontinuity in current with the instability occurrence. Comparison of ionic velocity with apparent velocity shows that the liquid is dependent more on particulate contamination than on ions.<<ETX>>","PeriodicalId":149735,"journal":{"name":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130836104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Space-charge modified transients in polyimide","authors":"H. Neuhaus, S. Senturia","doi":"10.1109/CEIDP.1988.26372","DOIUrl":"https://doi.org/10.1109/CEIDP.1988.26372","url":null,"abstract":"A simple quantitative model for the metal-PI-metal system was used to calculate space-charge modified conduction transients in PI (polyimide). Experimental data from PI samples containing controlled ion content are compared with numerically computed current-time transients. The calculated transients model the gross trends observed in experimental data. The effect of mobile ions is to change the shape of the current transient, but the steady current is not strongly dependent on ionic concentration. It is concluded that a detailed analysis of the formation of space-charge during electrical measurements is critical to the understanding of transient phenomena in insulating polymers.<<ETX>>","PeriodicalId":149735,"journal":{"name":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130122396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electroluminescence from epoxy insulation under impulse voltage","authors":"G. Stone, R. V. van Heeswijk","doi":"10.1109/CEIDP.1988.26361","DOIUrl":"https://doi.org/10.1109/CEIDP.1988.26361","url":null,"abstract":"Light pulses have been recorded during the application of positive and negative unipolar surges to epoxy insulation containing a needle-plane electrode structure. It is shown that the light pulses occur more frequently on the rising and falling edges of the surge waveform, which indicates space-charge formation. The lack of light pulses, and presumably of energetic charge injection, at very high surge repetition rates was noted.<<ETX>>","PeriodicalId":149735,"journal":{"name":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116373296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Sensitive low field Kerr electro-optic measurements in transformer oil","authors":"D. Sheen, T. Fujiwara, M. Zahn","doi":"10.1109/CEIDP.1988.26354","DOIUrl":"https://doi.org/10.1109/CEIDP.1988.26354","url":null,"abstract":"A frequency-selective amplifier was used to make sensitive Kerr electro-optic field mapping measurements with a small signal AC voltage superimposed on a DC level. With several different electrode materials, including brass, stainless steel, and aluminium, the authors have observed very significant levels of field distortion due to positive space charge on the order of 400 mu C/m/sup 3/. It was possible to measure field strengths as low as 100 V/cm with typical average field strengths tested over the range of 500 V/cm to 29 kV/cm. The transient evolution of these fields was also measured, showing the transition from a uniform to a highly nonuniform field on a time scale on the order of 60 s.<<ETX>>","PeriodicalId":149735,"journal":{"name":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114918392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Loubriel, M. O’Malley, F. Zutavern, B. McKenzie, W. R. Conley
{"title":"Surface flashover threshold and switched fields of photoconductive semiconductor switches","authors":"G. Loubriel, M. O’Malley, F. Zutavern, B. McKenzie, W. R. Conley","doi":"10.1109/CEIDP.1988.26369","DOIUrl":"https://doi.org/10.1109/CEIDP.1988.26369","url":null,"abstract":"It is shown that Si photoconductive semiconductor switches can be used to switch high voltages (up to 123 kV), high fields (up to 82 kV/cm) and high currents (2.8 kA). The ability of the samples to withstand this type of high-voltage, high-current switching depends on the way in which the current penetrates the semiconductor. The appropriate use of water or contacts greatly improves the switching capability. It is also shown that the wafers can support large currents (4.0 kA for GaAs and 2.8 kA for Si) and large linear current densities (3.2 kA/cm for GaAs and 1.4 kA/cm for Si). For GaAs this linear current density corresponds to about 1 MA/cm/sup 2/ given a penetration depth of about 10/sup -3/ cm.<<ETX>>","PeriodicalId":149735,"journal":{"name":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128341286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}