光导半导体开关的表面闪络阈值与开关场

1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena Pub Date : 1988-10-16 DOI:10.1109/CEIDP.1988.26369

G. Loubriel, M. O’Malley, F. Zutavern, B. McKenzie, W. R. Conley

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引用次数: 10

摘要

结果表明，硅光导半导体开关可用于切换高电压(高达123 kV)、高场(高达82 kV/cm)和大电流(2.8 kA)。样品承受这种高电压、大电流开关的能力取决于电流穿透半导体的方式。适当使用水或触点可大大提高开关能力。研究还表明，晶圆可以支持大电流(GaAs为4.0 kA, Si为2.8 kA)和大线性电流密度(GaAs为3.2 kA/cm, Si为1.4 kA/cm)。对于砷化镓，假设穿透深度约为10/sup -3/ cm，则线性电流密度约为1 MA/cm/sup 2/。

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Surface flashover threshold and switched fields of photoconductive semiconductor switches

It is shown that Si photoconductive semiconductor switches can be used to switch high voltages (up to 123 kV), high fields (up to 82 kV/cm) and high currents (2.8 kA). The ability of the samples to withstand this type of high-voltage, high-current switching depends on the way in which the current penetrates the semiconductor. The appropriate use of water or contacts greatly improves the switching capability. It is also shown that the wafers can support large currents (4.0 kA for GaAs and 2.8 kA for Si) and large linear current densities (3.2 kA/cm for GaAs and 1.4 kA/cm for Si). For GaAs this linear current density corresponds to about 1 MA/cm/sup 2/ given a penetration depth of about 10/sup -3/ cm.<>

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来源期刊

1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena

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