Thermally grown fatty acid films on semiconductors

Abstract

The authors report preliminary results on the capacitance versus voltage (C-V) characteristics of MIS devices containing thermally grown fatty-acid films as insulators. A comparative study is carried out between the C-V plots of devices with Si-SiO/sub 2/ and with Si-SiO/sub 2/-fatty-acid film interfaces. The authors also discuss results on the DC breakdown behavior of these films in metal-insulator-metal type devices. If the films are annealed thermally or electrically after deposition, their breakdown fields are significantly higher than those on unannealed (as-grown) films. It is believed that the annealing reduces the density of defects in these films leading to higher breakdown fields.<>