2016 IEEE Applied Power Electronics Conference and Exposition (APEC)最新文献_第7页

Medium voltage (≥ 2.3 kV) high frequency three-phase two-level converter design and demonstration using 10 kV SiC MOSFETs for high speed motor drive applications 中压(≥2.3 kV)高频三相两电平变换器的设计和演示，使用10 kV SiC mosfet用于高速电机驱动应用

2016 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2016-03-20 DOI: 10.1109/APEC.2016.7468066

S. Madhusoodhanan, K. Mainali, A. Tripathi, K. Vechalapu, S. Bhattacharya

引用次数: 36

An analytical framework to design a Dynamic Frequency Control scheme for microgrids using energy storage 基于储能的微电网动态频率控制方案设计分析框架

2016 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2016-03-20 DOI: 10.1109/APEC.2016.7468093

A. Renjit, F. Guo, Ratnesh K. Sharma

引用次数: 6

A MV intelligent gate driver for 15kV SiC IGBT and 10kV SiC MOSFET 用于15kV SiC IGBT和10kV SiC MOSFET的中压智能栅极驱动器

2016 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2016-03-20 DOI: 10.1109/APEC.2016.7468153

A. Tripathi, K. Mainali, S. Madhusoodhanan, Akshat Yadav, K. Vechalapu, S. Bhattacharya

{"title":"A MV intelligent gate driver for 15kV SiC IGBT and 10kV SiC MOSFET","authors":"A. Tripathi, K. Mainali, S. Madhusoodhanan, Akshat Yadav, K. Vechalapu, S. Bhattacharya","doi":"10.1109/APEC.2016.7468153","DOIUrl":"https://doi.org/10.1109/APEC.2016.7468153","url":null,"abstract":"This paper presents an Intelligent Medium-voltage Gate Driver (IMGD) for 15kV SiC IGBT and 10kV SiC MOSFET devices. The high voltage-magnitude and high dv/dt(> 30kV/μs) of these MV SiC devices, pose design challenge in form of isolation and EMI. This problem is solved by development of a <; 1pF isolation capacitance power-supply. But due to applied high stress, smaller short-circuit withstand time and the criticality of the application, these devices need to be monitored, well protected, active gate-driven and safely shut-down. This paper presents an EMI hardened IMGD built around a CPLD, sensing and optical interfacing unit. It provides advanced gate-driving, added protection and optically isolated state-monitoring features. The device operating conditions such as module temperature and Vds(on) can be data-logged. They can be used for diagnosis/prognosis purposes such as to predict failure and safely shut-down the system. This paper describes the functionality of different building blocks. The 15kV SiC IGBT has higher second switching slope above its punch-through level which is moderated without increasing losses by using digitally controlled active gate-driving. The shoot-through protection time can be reduced below withstand time by advanced gate driving. Soft turn-on and over-current triggered gate-voltage reduction helps reducing blanking time and quick turn-off reduces the protection response time. In this paper, the IMGD is high side tested at 5kV with device state monitoring on. The active gate-driving is tested at 6kV.","PeriodicalId":143091,"journal":{"name":"2016 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133829750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 39

Simultaneous voltage and current compensation of the 3-phase electric spring with decomposed voltage control 分解电压控制三相电弹簧电压电流同步补偿

2016 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2016-03-20 DOI: 10.1109/APEC.2016.7467980

Shuo Yan, Tianbo Yang, C. K. Lee, Siew-Chong Tan, S. Hui

引用次数: 3

Envelope tracking GaN power supply for 4G cell phone base stations 用于4G手机基站的包络跟踪GaN电源

2016 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2016-03-20 DOI: 10.1109/APEC.2016.7468185

Yuanzhe Zhang, J. Strydom, M. D. de Rooij, D. Maksimović

引用次数: 41

A 5MHz, 24V-to-1.2V, AO2T current mode buck converter with one-cycle transient response and sensorless current detection for medical meters 一种5MHz, 24v -1.2 v, AO2T电流模式降压转换器，具有单周期瞬态响应和无传感器电流检测，适用于医疗仪表

2016 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2016-03-20 DOI: 10.1109/APEC.2016.7467857

Xugang Ke, Joseph Sankman, D. Ma

引用次数: 6

An innovative power module with power-system-in-inductor structure 一种具有电感式电源系统结构的新型电源模块

2016 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2016-03-20 DOI: 10.1109/APEC.2016.7468155

Laili Wang, D. Malcolm, Yanfei Liu

{"title":"An innovative power module with power-system-in-inductor structure","authors":"Laili Wang, D. Malcolm, Yanfei Liu","doi":"10.1109/APEC.2016.7468155","DOIUrl":"https://doi.org/10.1109/APEC.2016.7468155","url":null,"abstract":"This paper presents an integrated power module with the features of high power density and high efficiency. A multi-functional integrated magnetic component is designed. The component has the roles of both the filter inductor and the case of the whole power module. With the assist of finite element analysis (FEA), design and optimization of the proposed inductor are demonstrated. It has higher inductance value than the inductor used in conventional designs. It has bigger coil winding and larger surface area, leading to lower DCR and better thermal performances than plastic packaging. Benefiting from these advantages, the power module constructed based on the inductor can achieve higher efficiency and lower temperature than those based on traditional plastic packaging solutions. Design of the inductor is demonstrated through the combination of analytical and simulation methods. An inductor prototype is built and used in an integrated power module to do experimental tests. Loss breakdown of the power module is executed to show the loss of the magnetic component. The proposed power module shows better performances than the plastic packaging solution.","PeriodicalId":143091,"journal":{"name":"2016 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124345420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

A normalization procedure of DC-side stray inductance for high-speed switching circuit 高速开关电路直流侧杂散电感的归一化方法

2016 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2016-03-20 DOI: 10.1109/APEC.2016.7468288

M. Ando, K. Wada

引用次数: 2

A new driving concept for normally-on GaN switches in cascode configuration 一种新的驱动概念，用于级联码配置的常导通GaN开关

2016 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2016-03-20 DOI: 10.1109/APEC.2016.7467992

B. Zojer

{"title":"A new driving concept for normally-on GaN switches in cascode configuration","authors":"B. Zojer","doi":"10.1109/APEC.2016.7467992","DOIUrl":"https://doi.org/10.1109/APEC.2016.7467992","url":null,"abstract":"Normally-on high-voltage (HV) power transistors are usually operated in a series connection with low-voltage (LV) MOSFETs to ensure safe operation. In the widely used cascode configuration (CC) the status of the combined switch is controlled via the MOSFET gate, whereas the alternative direct drive (DD) method controls the gate of the HV switch directly and utilizes the LV transistor as a safety switch only. Both concepts have their respective benefits: CC allows simple standard driving schemes, while DD excels in low switching losses. This paper investigates a third approach: by controlling both HV and LV gates an optimization of switching performance particularly in hard-switched half-bridge applications can be achieved. However, a straight-forward implementation of such a “dual drive” (2D) concept would obviously require a sophisticated driving scheme to allow independent control of both gates. The key idea of this paper is thus the substitution of a separate HV gate driver by a charge pump circuit connected to the LV gate driver. The new concept finally modifies CC by simply adding 3 passive components (resistor, capacitor, diode - “RCD” concept), yet it significantly lowers both losses and voltage stress. In a nutshell, the proposed cascode is able to combine direct drive switching performance with standard driving schemes.","PeriodicalId":143091,"journal":{"name":"2016 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"292 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117334662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Optimized control of high-performance servo-motor drives in the field-weakening region 弱磁场区高性能伺服电机驱动的优化控制

2016 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2016-03-20 DOI: 10.1109/APEC.2016.7468260

J. Bermingham, G. O'Donovan, Ray Walsh, M. Egan, G. Lightbody, J. Hayes

{"title":"Optimized control of high-performance servo-motor drives in the field-weakening region","authors":"J. Bermingham, G. O'Donovan, Ray Walsh, M. Egan, G. Lightbody, J. Hayes","doi":"10.1109/APEC.2016.7468260","DOIUrl":"https://doi.org/10.1109/APEC.2016.7468260","url":null,"abstract":"Magnetic saturation may cause the inductance of a servo motor to deviate from values defined during the design of a drive's control system. Modern servo-drives are equipped with field-weakening strategies that control the trajectory of the motor's current vectors to produce the optimum levels of torque within the defined limit of current and voltage. The objective of this paper is to develop a `plug and play' control scheme to integrate industrial inverters and machines without extensive characterization of the matched set, while operating within the operating specifications of the drive components. In this paper, an approach to torque optimization is presented in which the motor-terminal voltage-vector magnitude is regulated at high motor speeds while producing torque-optimizing current-vector commands. This method differs from other field-weakening solutions due to the active control of the voltage vector trajectory on the dq-voltage plane across an extended motor speed range. In a decoupled cascaded control strategy, the voltage-control loops produce current-vector trajectory commands in order to realize the voltage set points. The resulting current vector continuously conforms to the defined voltage and current limits of the servo drive without characterization of magnetic saturation. Results of the successful hardware implementation of the method in an industrial drive are presented.","PeriodicalId":143091,"journal":{"name":"2016 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122141477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1