用于4G手机基站的包络跟踪GaN电源

2016 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2016-03-20 DOI:10.1109/APEC.2016.7468185

Yuanzhe Zhang, J. Strydom, M. D. de Rooij, D. Maksimović

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引用次数: 41

摘要

本文介绍了一种基于EPC eGaN®fet的4G手机基站包络跟踪(ET)电源。为了优化设计，建立了分析损耗模型，并利用零电压开关技术对单相同步降压变换器进行了验证。然后将该模型扩展到四相，并用于设计具有20mhz大信号带宽(BW)的60w ET电源。在每相开关频率为25 MHz时，测量到的静态功率级效率在30 V输出功率为68 W时达到96.5%。实验结果表明，准确跟踪20 MHz 7 dB峰值平均功率比(PAPR) LTE包络，总效率为92.3%，在30 V下提供67 W的平均功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Envelope tracking GaN power supply for 4G cell phone base stations

This paper introduces an envelope tracking (ET) power supply for 4G cell phone base stations using EPC eGaN® FETs. An analytical loss model is developed for design optimization and verified by a single phase synchronous buck converter using the zero-voltage switching (ZVS) technique. The model is then extended to four phases and is used to design a 60 W ET power supply with 20 MHz large signal bandwidth (BW). At 25 MHz per-phase switching frequency, measured static power stage efficiency peaks at 96.5% with 68 W output power delivered from 30 V. Experimental results demonstrate accurate tracking of 20 MHz 7 dB Peak-to-Average Power Ratio (PAPR) LTE envelope with 92.3% total efficiency, delivering 67 W average power from 30 V.

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来源期刊

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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