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2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers最新文献

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Modeling finger number dependence on RF noise to 10 GHz in 0.13 /spl mu/m node MOSFETs with 80nm gate length 在栅极长度为80nm的0.13 /spl mu/m节点mosfet中，模拟手指数对10 GHz射频噪声的依赖性
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320561
M. King, Z. M. Lai, C. Huang, C. Lee, M. Ma, C. Huang, Yun Chang, A. Chin
{"title":"Modeling finger number dependence on RF noise to 10 GHz in 0.13 /spl mu/m node MOSFETs with 80nm gate length","authors":"M. King, Z. M. Lai, C. Huang, C. Lee, M. Ma, C. Huang, Yun Chang, A. Chin","doi":"10.1109/RFIC.2004.1320561","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320561","url":null,"abstract":"We have modeled the as-measured and de-embedded NF/sub min/ on multi-fingers 0.13 /spl mu/m node MOSFET. In contrast to the as-measured large NF/sub min/ value and strong dependence on parallel gate fingers, the de-embedded NF/sub min/ has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NF/sub min/, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NF/sub min/ to 10 GHz, the weak dependence of intrinsic NF/sub min/ on gate finger is due to the combined effect of R/sub g/g/sub m/ and drain hot carrier noise but both have weak dependence on finger numbers.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"5 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115675689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
A novel SiGe BiCMOS variable-gain active predistorter using current steering topologies 一种新型SiGe BiCMOS可变增益有源预失真器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320682
Jeng‐Han Tsai, Tian-Wei Huang
{"title":"A novel SiGe BiCMOS variable-gain active predistorter using current steering topologies","authors":"Jeng‐Han Tsai, Tian-Wei Huang","doi":"10.1109/RFIC.2004.1320682","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320682","url":null,"abstract":"This paper presents the novel design of a 2.4-GHz variable-gain active predistorter (PD) using a 0.35-/spl mu/m SiGe BiCMOS technology. Current steering topologies are selected for this design to provide dual functions of: (1) an active predistorter for power amplifier linearization; and (2) a variable gain amplifier (VGA) for transmitter power control. Unlike other traditional \"passive\" predistorters, this active predistorter does not need an additional buffer amplifier to compensate the loss. Furthermore, through the bias voltage control in the low current region, the amount of gain expansion from this predistorter becomes programmable, to compensate for the PA non-linearity. Finally, this variable-gain predistorter could be used as a VGA in a multi-stage power amplifier design and it is well suitable for RF-SOC applications. The PA experimental results of 16-QAM modulated signals show that the compressed constellation can be uniformly spread out into a \"square\", the spectral re-growth is suppressed by 7-9 dB, and the EVM can be reduced from 9.9 % to 5.7 %.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114248665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Multiple phase generation and distribution for a fully-integrated 24-GHz phased-array receiver in silicon 全集成24ghz相控阵接收机的多相生成和分配
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320580
Xiang Guan, H. Hashemi, A. Komijani, A. Hajimiri
{"title":"Multiple phase generation and distribution for a fully-integrated 24-GHz phased-array receiver in silicon","authors":"Xiang Guan, H. Hashemi, A. Komijani, A. Hajimiri","doi":"10.1109/RFIC.2004.1320580","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320580","url":null,"abstract":"This paper presents an on-chip multiphase LO generation and distribution technique used to implement a fully-integrated 24-GHz 8-path phased-array receiver in silicon. Sixteen LO phases are generated by an LC ring oscillator and distributed by a symmetric network to all eight paths. The 8-path array achieves a phase shifting resolution of 22.5/spl deg/ and a total array gain of 61dB.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124191390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A low power Ka-band SiGe HBT VCO using line inductors 采用线电感的低功率ka波段SiGe HBT压控振荡器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320689
Y. Chen, W. Kuo, Jongsoo Lee, J. Cressler, J. Laskar, G. Freeman
{"title":"A low power Ka-band SiGe HBT VCO using line inductors","authors":"Y. Chen, W. Kuo, Jongsoo Lee, J. Cressler, J. Laskar, G. Freeman","doi":"10.1109/RFIC.2004.1320689","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320689","url":null,"abstract":"An integrated low power, low phase noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-/spl mu/m 200 GHz SiGe HBT technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for Ka-band applications. The VCO operates on 1.6 V and dissipates 3.7 mW of power. A phase noise of -99 dBc/Hz at 1 MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of -183.7 dBc/Hz.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124345102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Low insertion loss and high linearity PHEMT SPDT and SP3T switch ICs for WLAN 802.11 a/b/g applications 低插入损耗和高线性PHEMT SPDT和SP3T开关ic用于WLAN 802.11 a/b/g应用
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320667
Z. Gu, D. Johnson, S. Belletete, D. Fryklund
{"title":"Low insertion loss and high linearity PHEMT SPDT and SP3T switch ICs for WLAN 802.11 a/b/g applications","authors":"Z. Gu, D. Johnson, S. Belletete, D. Fryklund","doi":"10.1109/RFIC.2004.1320667","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320667","url":null,"abstract":"GaAs SPDT and SP3T antenna switch ICs for IEEE 802.11 a/b/g applications are developed. By using advanced Skyworks PHEMT technologies, it is possible to achieve an insertion loss as low as 0.55 dB for SPDT switch, 0.5 dB lower than any previously reported DC-6 GHz band switch, and high linearity with 55 dBm input IP3 and a high isolation over 20 dB at 3 V; the SP3T switch also exhibits excellent performance with an insertion loss of 0.9 dB, input IP3 of 47 dBm and isolation over 25 dB throughout DC-6 GHz band. The high performance comes from the following technologies: series and shunt topology with dual-gate FETs, AlGaAs/InGaAs/AlGaAs 0.5 /spl mu/m EPI-based process with a fully selective dual recess etch, and the relatively shallow pinch off voltage of -0.5 V (Y. Tkachenko et al., Euro. Microwave Conf. Dig., pp. 1041-1045, 1997).","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121803161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
A 5 GHz-band SiGe-MMIC direct quadrature modulator using a doubly stacked polyphase filter 采用双堆叠多相滤波器的5ghz频段SiGe-MMIC直接正交调制器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320637
K. Nakajima, T. Sugano, N. Suematsu
{"title":"A 5 GHz-band SiGe-MMIC direct quadrature modulator using a doubly stacked polyphase filter","authors":"K. Nakajima, T. Sugano, N. Suematsu","doi":"10.1109/RFIC.2004.1320637","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320637","url":null,"abstract":"A 5 GHz-band SiGe-MMIC direct quadrature modulator using a doubly stacked polyphase filter (PPF) is described. The doubly stacked PPF can dramatically reduce the output phase and magnitude imbalance corresponding to the transmission line length inside the RC PPF networks. The quadrature modulator using two-stage doubly stacked PPF performs the error vector magnitude of 3.6 %rms, magnitude error of 3.0 %rms, and phase error of 1.2 deg at LO frequency of 5.8 GHz for /spl pi//4-shifted QPSK (2 Msps) modulated signals. Wideband characteristics from 5.0 to 6.5 GHz are also demonstrated. This modulator dissipates 11.3 mA at 3.3 V supply voltage.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121942684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A 27 GHz fully integrated CMOS distributed amplifier using coplanar waveguides 采用共面波导的27 GHz全集成CMOS分布式放大器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320568
R. Amaya, N. G. Tarr, C. Plett
{"title":"A 27 GHz fully integrated CMOS distributed amplifier using coplanar waveguides","authors":"R. Amaya, N. G. Tarr, C. Plett","doi":"10.1109/RFIC.2004.1320568","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320568","url":null,"abstract":"This paper reports a CMOS distributed amplifier which operates from 1-27 GHz. This amplifier exhibits a measured gain of 6 dB and uses coplanar waveguides to implement required inductances. Power consumption is 68.1 mW while driven from a 3.3V supply but it can operate with supply voltages as low as 1.8V. Chip area is 1.8 /spl times/ 0.9 mm. To the author's knowledge this is the fastest frequency of operation ever reported for a distributed amplifier implemented in a standard CMOS technology.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124799809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 42
A wide-band CMOS injection-locked frequency divider 一种宽带CMOS注入锁定分频器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320574
Mustafa Acar, D. Leenaerts, Bram Nauta
{"title":"A wide-band CMOS injection-locked frequency divider","authors":"Mustafa Acar, D. Leenaerts, Bram Nauta","doi":"10.1109/RFIC.2004.1320574","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320574","url":null,"abstract":"In this paper we propose a novel inductorless injection-locked frequency divider (ILFD) that can make divisions with ratios 2,4,6 and 8 with wide locking ranges. Fabricated in a digital 0.18 /spl mu/m CMOS process the divider can operate up to 15 GHz. The measured locking ranges of the divider for division ratios 4 and 6 are 1.6 GHz and 1.1 GHz wide respectively. The current consumption of the divider is 3.8 mA operating at 1.8 V supply. The active area of the chip is 100/spl times/67 /spl mu/m/sup 2/.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131315580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
8 GHz, 1 V, high linearity, low power CMOS active mixer 8ghz, 1v，高线性度，低功耗CMOS有源混频器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320635
F. Mahmoudi, C. Salama
{"title":"8 GHz, 1 V, high linearity, low power CMOS active mixer","authors":"F. Mahmoudi, C. Salama","doi":"10.1109/RFIC.2004.1320635","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320635","url":null,"abstract":"This paper presents the design and implementation of a new 8-GHz high linearity current commutating CMOS RF mixer. The high linearity of the mixer is attributed to the novel RF transconductor stage, employing a new version of the bias-offset technique. The outstanding features of the mixer are high linearity, low voltage, low power consumption and design simplicity. A prototype implemented in 0.18 /spl mu/m CMOS technology and operating at 1V power supply features an IIP3 of +3.5 dBm, an IIP2 of better than +45 dBm, an input compression point of -5.5 dBm, a power conversion gain of +6.5 dB while drawing 6.9 mA. The performance of the mixer exceeds that of previously reported active mixers while preserving simplicity of design and satisfying potential requirements for 4G mobile communication systems.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126482987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Common base amplifier with 7-dB gain at 176 GHz in InP mesa DHBT technology 在InP台面DHBT技术中，具有176ghz的7db增益的公共基极放大器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320567
V. Paidi, Z. Griffith, Y. Wei, M. Dahlstrom, N. Parthasarathy, M. Urteaga, M. Rodwell, A. Fung, L. Samoska
{"title":"Common base amplifier with 7-dB gain at 176 GHz in InP mesa DHBT technology","authors":"V. Paidi, Z. Griffith, Y. Wei, M. Dahlstrom, N. Parthasarathy, M. Urteaga, M. Rodwell, A. Fung, L. Samoska","doi":"10.1109/RFIC.2004.1320567","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320567","url":null,"abstract":"We report common base power amplifiers designed for 140-220 GHz frequency band in InP mesa double heterojunction bipolar transistor (DHBT) technology. A single stage common base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.77 dBm output power with 5-dB associated power gain at 172 GHz. The two-stage common base amplifier exhibited 8.1 dBm output power with 6.35 dB associated power gain at 176 GHz and demonstrated 9.13 dBm of saturated output power. This two stage common base amplifier exhibited 10.3 dBm output power with 3.48-dB associated power gain at 150.2 GHz.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"111 3S 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125515535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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