International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)最新文献_第5页

Variation analysis of spintronic device using machine learning algorithm 基于机器学习算法的自旋电子器件变异分析

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2023-09-28 DOI: 10.1117/12.2676806

S. Yadav, A. Shukla, Hemkant Nehete, Sandeep Soni, Shipra Saini, B. Kaushik

{"title":"Variation analysis of spintronic device using machine learning algorithm","authors":"S. Yadav, A. Shukla, Hemkant Nehete, Sandeep Soni, Shipra Saini, B. Kaushik","doi":"10.1117/12.2676806","DOIUrl":"https://doi.org/10.1117/12.2676806","url":null,"abstract":"In this article, the focus is on using machine learning methods to analyse non-volatile memory devices. This is important because the production of integrated circuits in the sub-micrometre range depends on advancements in manufacturing process technology, and it is crucial to evaluate how manufacturing tolerances affect the functionality of contemporary integrated circuits. Traditionally, Monte Carlo-based techniques have been used to accurately evaluate the impact of manufacturing tolerances on the functionality of integrated circuits. However, these techniques are computationally time-consuming. We will propose a scheme to \"learn\" the variation of the read margin (parallel and anti-parallel resistance) performance of spintronics devices. The machine learning approach, artificial neural network, is focused on this study (Read margin of spin transfer torque (STT)) spintronics devices. The accuracy for STT by Artificial Neural Network (ANN) is calculated with the help of the MATLAB deep learning toolbox. Regression models using machine learning (ML) are fast and precise over a variety of input ranges, making them ideal for device modelling. The ML algorithm has emerged as a potential substitute for Monte Carlo-based techniques. It can reduce the computational load needed in a Monte Carlo simulation covering all process corners, design parameters, and operating conditions. The article demonstrates the effectiveness of the ML algorithm by performing various simulations on spin transfer torque (STT) non-volatile memory. The proposed scheme involves \"learning\" the variation of the read margin performance of spintronic devices as a function of its material and geometric parameters. In conclusion, the use of machine learning techniques based on the different regression methods is a promising approach to increase the prediction time of result analysis as compared to SPICE simulation time.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"14 1","pages":"126560V - 126560V-9"},"PeriodicalIF":0.0,"publicationDate":"2023-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78820339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring transient modification of hyperbolic metamaterials using InAsSb-based semiconductor 探索利用inassb基半导体对双曲型超材料进行瞬态修饰

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2023-09-28 DOI: 10.1117/12.2676371

H. Haugan, D. Bas, Augustine Urbas, A. Neal, K. Eyink

{"title":"Exploring transient modification of hyperbolic metamaterials using InAsSb-based semiconductor","authors":"H. Haugan, D. Bas, Augustine Urbas, A. Neal, K. Eyink","doi":"10.1117/12.2676371","DOIUrl":"https://doi.org/10.1117/12.2676371","url":null,"abstract":"Quantum photonics opens doors for applications in sensing, data transfer, and quantum computing. Application areas in many of these technologies require in some manner tunable single photon sources. Hyperbolic metamaterials, composed of metallic building blocks embedded in dielectric media control emission lifetime by modifying the photon density of states. However, no previous efforts have explored the transient modification of metamaterials to modulate emission. Antimony-based semiconductor hyperbolic metamaterials (SHMMs) offer a route to modulation of these resonances at the mid-infrared (IR) wavelength range, which would modulate emission. In this work, we demonstrate the ability to create an ultrafast hyperbolic momentum state in metallic InAsSb/dielectric GaSb stacks and explore the possibility of transient modification of metamaterials by controlling the optical properties of photon emission. If successful, this study will establish a new platform for deterministic single photon emission that can be integrable into opto-electronic platforms and dramatically advance optical quantum technologies. Properly engineered quantum well structures are grown by molecular beam epitaxy with Si-doping in order to convert the InAsSb layers from dielectric to metallic at IR frequencies. The carrier excitation scheme of the engineered hyperbolic stacks is investigated in a variety of excitation levels using pump–probe measurements. The photo-excited carriers in the structure with a metal fraction of ∼0.5 show a polarization dependent reflectivity change, which indicates a transient hyperbolic metamaterial state in the heterostructure induced by the pump laser.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"132 1","pages":"1265704 - 1265704-8"},"PeriodicalIF":0.0,"publicationDate":"2023-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88983955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Anisotropy barrier-induced unidirectional motion of spin wave driven skyrmion 自旋波驱动粒子的各向异性势垒诱导的单向运动

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2023-09-28 DOI: 10.1117/12.2676810

Shipra Saini, A. Shukla, Namita Bindal, Sandeep Soni, Shailendra Yadav, B. Kaushik

{"title":"Anisotropy barrier-induced unidirectional motion of spin wave driven skyrmion","authors":"Shipra Saini, A. Shukla, Namita Bindal, Sandeep Soni, Shailendra Yadav, B. Kaushik","doi":"10.1117/12.2676810","DOIUrl":"https://doi.org/10.1117/12.2676810","url":null,"abstract":"The propagation of spin waves and their interaction with the spin solitons like skyrmions, domain walls and vortex are one of the promising ways for designing nanoscale spintronic devices. Magnetic skyrmion, a particle-like nanoscale object has potential applications in next-generation spintronic devices. In this paper, the unidirectional motion of the skyrmion under the influence of spin wave is studied using micromagnetic simulations. Here, two different magnetic anisotropies are considered on a nanotrack that creates an energy gradient. As a result, the repulsive forces act on the skyrmion and is responsible for the motion of the skyrmion in one direction. The spin wave driving force leads the skyrmion to move in forward direction and the anisotropy gradient is responsible to prevent the skyrmion motion in reverse direction. The skyrmion moves from higher perpendicular magnetic anisotropy region to lower energy region, leading to a unidirectional transport of the skyrmion. This proposed device has less Joule heating and is more energy efficient as compared to other spin transfer torque (STT) and spin orbit torque (SOT) driven techniques. This is due to the fact that spin wave can generate a flow of magnetic momentum without generating an electron flow. This spin wave driven skyrmionics device is a promising pathway towards the development of a complete non-charge based magnetic devices.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"124 1","pages":"126560W - 126560W-6"},"PeriodicalIF":0.0,"publicationDate":"2023-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88083567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Probing and controlling magnetism in 2D magnetic semiconductor CrSBr 二维磁性半导体CrSBr的探测与控制

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2022-10-12 DOI: 10.1117/12.2632847

John Cenker, S. Sivakumar, Kaichen Xie, G. Diederich, Zhaoyu Liu, Avalon H. Dismukes, Daniel G. Chica, Xiaoyang Zhu, Xavier Roy, J. Chu, Di Xiao, Ting Cao, Xiaodong Xu

引用次数: 0

The optimization of metal-semiconductor light detection by Schottky interface image force 肖特基界面像力对金属-半导体光探测的优化

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2022-10-04 DOI: 10.1117/12.2633752

Zih-Chun Su, D. Sinha, Ashish Gaurav, Ching-Fuh Lin

引用次数: 1

Multipair emission effects in quantum dot-based entangled photon sources 量子点纠缠光子源中的多对发射效应

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2022-10-04 DOI: 10.1117/12.2632421

J. Neuwirth, F. Basso Basset, M. Rota, S. F. Covre da Silva, K. Jöns, A. Rastelli, R. Trotta

{"title":"Multipair emission effects in quantum dot-based entangled photon sources","authors":"J. Neuwirth, F. Basso Basset, M. Rota, S. F. Covre da Silva, K. Jöns, A. Rastelli, R. Trotta","doi":"10.1117/12.2632421","DOIUrl":"https://doi.org/10.1117/12.2632421","url":null,"abstract":"During recent years, quantum dots have become an increasingly established source of highly entangled photons 1. The main motivation for the development of this technology has resided in the expectation that a resonantly driven quantum emitter can offer a path towards on-demand photon pair generation 2. In fact, state-of-the-art sources relying on spontaneous parametric down-conversion intrinsically suffer from multipair emission at high pair generation rates, which causes a tradeoff between brightness and degree of entanglement 3. Despite the key importance of this aspect, the experimental study of how multiphoton emission affects the entanglement properties of quantum dot-based sources has received surprisingly little attention. In this paper we report the investigation of the multipair emission of the source under quasi-deterministic resonant two-photon excitation without filtering the excitation laser using polarization suppression. The focus is on measuring the real multipair emission entering in entanglement-based measurements, minimizing measurement artefacts from the setup and in particular from the excitation source. This is investigated by measuring the second-order correlation function at zero-time delay in several measurement conditions, including spectral filtering. Our work confirms that the multipair emission is provided also for entanglement-based measurement conditions and thus helps the design of efficient photon sources for quantum information and communication technologies.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"111 1","pages":"1220603 - 1220603-8"},"PeriodicalIF":0.0,"publicationDate":"2022-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76671662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Packaged foundry-fabricated silicon spiral photon pair source 封装的硅螺旋光子对源

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2022-10-04 DOI: 10.1117/12.2633145

Joseph Monteleone, Matthew van Niekerk, Mario Ciminelli, G. Leake, D. Coleman, M. Fanto, S. Preble

{"title":"Packaged foundry-fabricated silicon spiral photon pair source","authors":"Joseph Monteleone, Matthew van Niekerk, Mario Ciminelli, G. Leake, D. Coleman, M. Fanto, S. Preble","doi":"10.1117/12.2633145","DOIUrl":"https://doi.org/10.1117/12.2633145","url":null,"abstract":"We have demonstrated a packaged Silicon photon pair source. The spiral silicon waveguide source is 500 nm x 220 nm x 2 cm long and was packaged with input/output optical fibers enabling turn-key generation of photon pairs by connecting the input optical fiber to a telecommunication grade laser. In this work, we experimentally characterized the generation of bi-photons by spontaneous four-wave mixing in the Silicon waveguide. The insertion loss of the chip, after packaging, was measured to be approximately 15 dB (3 dB/facet, waveguide propagation loss of less than 1.5 dB/cm, 6 dB from splitters sequence). We investigated the phase matching of the source by wavelength tuning the 1 nm bandpass filters and found that the generated bi-photons have a half-bandwidth of 10 nm about the pump wavelength. We investigate pulse pumping using an actively mode-locked fiber laser with a 500 MHz repetition rate, pulse duration of approximately 30 ps and peak pulse power of 400 mW. Excitation of the pulsed source with a power of 1.4 mW through the chip generated 300 kHz coincidence rates after passing the chip’s output through a series of spectral bandpass filters (-1.4 db in channel 1 and -2.4 dB in channel 2 of filter loss and approximately 85 % efficiency of the detectors: inferred on-chip pair generation rate of 58 MHz). We also investigate two sources with 6 mW of continuous-wave pump power to generate 1550 nm bi-photons, generating 6.0 kHz coincidence rates (inferred on-chip pair generation rate of 2.3 MHz).","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"56 4 1","pages":"1220606 - 1220606-6"},"PeriodicalIF":0.0,"publicationDate":"2022-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74178575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Deterministic generation of building-block photonic cluster states from a single quantum emitter 从单个量子发射极确定地产生构建块光子团簇态

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2022-10-04 DOI: 10.1117/12.2636914

Shuo Sun

引用次数: 0

Cryogenic photoluminescence setup for rapid prototyping and active device biasing of monolayer 2D semiconductors for quantum applications 用于量子应用的单层二维半导体快速成型和有源器件偏置的低温光致发光装置

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2022-10-04 DOI: 10.1117/12.2633602

C. Torres, B. M. Pascoguin, J. Adleman, Brad C. Liu, Richard C. Ordonez, Cody K. Hayashi, K. Liotta

{"title":"Cryogenic photoluminescence setup for rapid prototyping and active device biasing of monolayer 2D semiconductors for quantum applications","authors":"C. Torres, B. M. Pascoguin, J. Adleman, Brad C. Liu, Richard C. Ordonez, Cody K. Hayashi, K. Liotta","doi":"10.1117/12.2633602","DOIUrl":"https://doi.org/10.1117/12.2633602","url":null,"abstract":"Monolayer transition metal dichalcogenides (TMDs) are promising 2D semiconductors that feature direct bandgaps useful for various quantum and optoelectronic applications. We present on our progress in establishing a cryogenic photoluminescence setup using a cryogenic probe station with bare multi-mode fibers that allows for active-device biasing of novel material platforms. Using this system, we are able to detect the photoluminescence signal from various chemical vapor deposited (CVD) and molecular beam epitaxy (MBE) grown 2D semiconductors on sapphire (0001) substrates in vacuum. We observe a temperature dependent direct bandgap red-shift of around 40nm (from 8K to 450K) for CVD grown monolayer WS2 and CVD grown monolayer WSe2 on sapphire (0001) substrates. We observe a temperature dependent direct bandgap red-shift of around 37nm (from 6K to 450K) for MBE grown monolayer MoSe2 on sapphire (0001) substrates. Interestingly, for monolayer MoS2 on sapphire (0001) substrates, we observe the emergence of a strong photoluminescence signal at cryogenic temperatures below 100K, in addition to the A exciton luminescence signal, which is attributed to bound excitons.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"3 1","pages":"1220607 - 1220607-12"},"PeriodicalIF":0.0,"publicationDate":"2022-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78288509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Optical transparency induced by a largely Purcell-enhanced single photon emitter in a low-Q cavity 低q腔中purcell增强单光子发射器诱导的光学透明度

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2022-10-04 DOI: 10.1117/12.2632380

D. Farfurnik, Harjot Singh, Zhouchen Luo, A. Bracker, S. Carter, E. Waks

引用次数: 0