肖特基界面像力对金属-半导体光探测的优化

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2022-10-04 DOI:10.1117/12.2633752

Zih-Chun Su, D. Sinha, Ashish Gaurav, Ching-Fuh Lin

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引用次数: 1

摘要

金属-半导体界面结构利用内部光子发射效应将光子能量转化为电子，是一种光电探测器。在肖特基器件中，势垒限制了可探测波长和探测响应，因此如何放大探测信号是一个重要的问题。在这里，我们首先从数学方程中量化了应用偏压对能量势垒还原机制的影响。此外，我们制作了金属/半导体肖特基器件，并通过实验证明了通过像力降低效应来优化光学响应。实验结果表明，在诱导象力降低效应后，反应性提高了21倍。

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The optimization of metal-semiconductor light detection by Schottky interface image force

The metal-semiconductor interface structure, which can convert photon energy into electrons by internal photon-emission effect, is utilized as one kind of photodetectors. In the Schottky device, the barrier limits the detectable wavelength and the detection response, so how to amplify the detection signal is an important issue. Here, we first quantify the effect of applied bias on the energy barrier reduction mechanism from a mathematical equation. Furthermore, we fabricate metal/semiconductor Schottky devices and experimentally demonstrate the optimization of optical response by image-force lowering effect. As a result, experiment showed a 21 times enhancement in responsivity after an image-force lowering effect was induced.

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International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)

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