二维磁性半导体CrSBr的探测与控制

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2022-10-12 DOI:10.1117/12.2632847

John Cenker, S. Sivakumar, Kaichen Xie, G. Diederich, Zhaoyu Liu, Avalon H. Dismukes, Daniel G. Chica, Xiaoyang Zhu, Xavier Roy, J. Chu, Di Xiao, Ting Cao, Xiaodong Xu

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引用次数: 0

摘要

磁性半导体中自旋和电荷的耦合是自旋电子学领域的核心，并引起了新的计算技术的极大兴趣。本文综述了近年来在层状反铁磁半导体CrSBr中磁激子耦合的研究和控制方面的最新进展。该材料中各向异性的wannier型激子作为层间磁耦合的传感器。使用这种激子传感器，我们发现通过拉伸应变的应用，磁顺序是非常可调的，在大但实验可行的应变下发生了可逆的AFM到FM转变。这些结果建立了CrSBr作为利用自旋-电荷-晶格耦合到二维极限的令人兴奋的平台。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Probing and controlling magnetism in 2D magnetic semiconductor CrSBr

The coupling of spin and charge in magnetic semiconductors lies at the heart of the field of spintronics and has attracted significant interest for new computing technologies. In this paper, we will review our recent progress in studying and controlling magneto-exciton coupling in the layered antiferromagnetic semiconductor CrSBr. The anisotropic Wannier-type excitons in this material serve as a sensor of the interlayer magnetic coupling. Using this exciton sensor, we found that the magnetic order is extremely tunable by the application of tensile strain, with a reversible AFM to FM transition occurring at large but experimentally feasible strains. These results establish CrSBr as an exciting platform for harnessing spin-charge-lattice coupling to the 2D limit.

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International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)

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