Iet Optoelectronics最新文献

{"title":"Design of High-Speed 25 Gb/s InGaAs/AlGaAsSb Avalanche Photodiodes","authors":"Yiwen Zhang,&nbsp;Jonathan Derek Taylor-Mew,&nbsp;Jo Shien Ng,&nbsp;Chee Hing Tan","doi":"10.1049/ote2.70031","DOIUrl":"https://doi.org/10.1049/ote2.70031","url":null,"abstract":"<p>There is an increasing demand for high speed 25 Gb/s low noise APDs. Semiconductors with disparate ionisation coefficients are known to provide low noise and high gain-bandwidth product. In this work, we performed a comprehensive simulation of 400 combinations Al_0.85Ga_0.15As_0.56Sb_0.44 (AlGaAsSb) avalanche width (<i>w</i>_<i>m</i>) and InGaAs absorption width (<i>w</i>_<i>a</i>) to identify a design to achieve high sensitivity at 25 Gb/s. Our model, which was benchmarked using experimental data in the literature, predicts that design options ranging from <i>w</i>_<i>m</i> = 100 nm with <i>w</i>_<i>a</i> = 700 nm to <i>w</i>_<i>m</i> = 700 nm with <i>w</i>_<i>a</i> = 100 nm will produce a bandwidth of at least 18.7 GHz and a gain of 10. Reducing the avalanche width to 100 nm will provide a gain-bandwidth product &gt; 200 GHz, without suffering from excessive band to band tunnelling current. Results from a large number of APD designs show that a sensitivity of −26.6 dBm at a wavelength of 1310 nm and a bit error rate of 1 × 10⁻¹² at 25 Gb/s can be achieved using a 100 nm AlGaAsSb avalanche region with a 1000 nm hybrid InGaAs absorption region (consisting of a 600 nm p-doped and a 400 nm depleted region). This is ∼5.5 and 3.8 dB better than a commercial III–V APD and Ge/Si APD, respectively, suggesting the great potential of using AlGaAsSb avalanche photodiodes in very high bit rate optical communication.</p>","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"20 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2026-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/ote2.70031","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147637062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"20 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2026-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148064767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Numerical Optimisation of Pyramid-Structured Indium Tin Oxide Electrodes for Transparent Perovskite Solar Cells","authors":"Amina Shafique,&nbsp;Uzma Amin,&nbsp;Ahmed Abu-Siada","doi":"10.1049/ote2.70029","DOIUrl":"https://doi.org/10.1049/ote2.70029","url":null,"abstract":"<p>Transparent perovskite solar cells (T-PSCs) offer a promising solution for integrating photovoltaic technology into windows and other transparent surfaces without compromising aesthetics. In this study, a periodic oxide–dielectric–oxide (ITO/ZnS/ITO) structure is designed and numerically optimised to enhance optical absorption whilst maintaining high transparency. Using CST Microwave Studio, a unit cell is simulated to analyse absorption, transmission, and reflection spectra and evaluate the optical performance of the proposed structure. The optimised design exhibited an average absorption of approximately 93% with a peak of 98% and an average visible transmission of 92%. Owing to its symmetrical geometry, the proposed structure showed insensitivity to both oblique incidence and polarisation angles. The absorption behaviour has been further verified using multiple reflection theory, which showed good agreement with the simulation results. Additionally, antireflection coatings are incorporated to achieve maximum transmission and thermal stability. Overall, the proposed ITO-based structure demonstrates effective light trapping and represents a strong candidate for integration into transparent perovskite solar cell applications.</p>","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"20 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2026-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/ote2.70029","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146256281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"20 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2026-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148069449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, Electronic and Optical Properties of Bixbyite In2O3 Compound: A Complex Study by Way of Density Functional Theory Investigations and Five Tandem Accurate Spectroscopic Techniques","authors":"Mohamed Salah Halati,&nbsp;Mounir Reffas,&nbsp;Oleg Y. Khyzhun,&nbsp;Khaled Hamdi Cherif,&nbsp;Abdelghafour Said Messalti,&nbsp;Mahmoud Bedrouni,&nbsp;Abderrezek Khireddine,&nbsp;Ahmad A. Al-Ahmadi,&nbsp;Enas Ali,&nbsp;Wulfran Fendzi Mbasso,&nbsp;Sherif S. M. Ghoneim","doi":"10.1049/ote2.70024","DOIUrl":"https://doi.org/10.1049/ote2.70024","url":null,"abstract":"&lt;p&gt;Metal oxides have been widely studied in recent years due to their promising applications in catalysis and optoelectronic devices. Among these metal oxides, Indium Oxide (In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;), attracts a special attention exhibiting excellent electrical, optical and catalytic properties. Therefore, the investigation of the chemical composition, electronic structure, and optical properties of this compound is very important to define the defects that can affect its practical application in peculiar areas. Consequently, the properties of the compound can be developed to obtain optimal results. In this context, here we carry out a complex study of physicochemical surface properties of In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; using a new approximation for exchange correlation potential denoted nKTB-mBJ and a tandem consisting of five very powerful experimental techniques. The spectroscopic measurements used in present work involve such ultrahigh vacuum (UHV) precise methods as X-ray photoelectron spectroscopy (XPES), Auger electron spectroscopy (AES), reflective electron energy loss spectroscopy (REELS), Ultraviolet photoelectron spectroscopy (UPS) and temperature dependent/independent photoluminescence spectroscopy (PLS) possessing high sensitivity while characterising the material surface and interfaces properties. These techniques were used to investigate the surface stoichiometry and valence band structure of In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; when being subjected to ion cleaning in UHV conditions. A robust combination between experiments via UPS and theory employing density functional theory DFT lead us to corroborate three well distinguish sub-peaks located at (4.4, 11.0 and 13.8 eV) and attribute each one to the appropriate orbitals of In and O. Furthermore, photoluminescence spectroscopy (PLS) was also used to carry out room temperature (RT) measurements, as well as those at variable temperatures and high vacuum conditions achieved by using a cryostat coupled with a multistage axial-flow turbo molecular EdwardnEXT240D pump, to investigate the impact of temperature on the bandgap states of In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;. The results present good stability of In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; under the ion sputtering process. The PLS spectra reveal the thermal sensitivity of the intrinsic point defect energy levels in the optical band gap of bulk In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; and a high emission around 580 nm at RT conditions, indicating that the compound under study is very useful for optoelectronic applications. The chromaticity CIE 1931 diagram shows the temperature effect at the structural defect states and hence the emission of bulk In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;. Furthermore, we have employed a number of theoretical approaches to study in detail the structural and electronic configuration of In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;. In particular, our data indicate that the calculated energy band gap of 3.30 eV, the intense visible emission at 2.1 eV assigned to oxygen vaca","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"20 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/ote2.70024","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146155160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"20 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148099144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Application of Metaheuristic Optimisation Methods to the Design of Guided-Mode Resonance Filters: A Comparative Study","authors":"Amirreza Asadollahzadeh,&nbsp;Amirali Tavakkoli-Kakhki,&nbsp;Mehrdad Shokooh-Saremi","doi":"10.1049/ote2.70026","DOIUrl":"https://doi.org/10.1049/ote2.70026","url":null,"abstract":"<p>The design of optical elements often requires precise optimisation where metaheuristic algorithms have emerged as a powerful approach. This study aims to optimise a guided-mode resonance reflectance filter chosen due to its extreme parameter sensitivity, which makes it an exemplary platform for evaluating metaheuristic algorithms in photonics. We rigorously compare six established metaheuristic techniques (particle swarm optimisation (PSO), genetic algorithm (GA), shuffled frog leaping algorithm (SFLA), artificial bee colony (ABC), imperialist competitive algorithm (ICA), and differential evolution (DE)) using critical performance metrics. This systematic analysis not only benchmarks algorithm effectiveness for guided-mode resonance filters but also establishes guidelines for optimising parameter-sensitive photonic devices.</p>","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"20 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/ote2.70026","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145963974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"20 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148069117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"20 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2026-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148068604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Multiple Scattering Channel Model for Ultraviolet Signal Propagation in the Atmosphere","authors":"Xianrui Jian,&nbsp;Qingfeng Wu","doi":"10.1049/ote2.70028","DOIUrl":"https://doi.org/10.1049/ote2.70028","url":null,"abstract":"<p>In this paper, we put forward an accurate multiple scattering channel model for ultraviolet (UV) signals propagating through the atmosphere. The model incorporates both the altitude-dependent variation of the refractive index structure parameter and the relative height between the UV transmitter and receiver, factors which have often been overlooked in previous studies. To validate the proposed model, we compare it with the established turbulence model through simulations and experiments at transmission distances ranging from 600 to 1000 m. The results demonstrate that the proposed model achieves higher accuracy. Furthermore, we investigate the effects of wind speed, the nominal value of the refractive-index structure parameter at ground level, and the number of photon scattering events on the channel path loss. This work establishes a solid theoretical foundation for the development of UV communication technology.</p>","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"20 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2026-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/ote2.70028","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145986758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}