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III-Nitride Electronic Devices最新文献

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Electronic properties of III-nitride materials and basics of III-nitride FETs iii -氮化物材料的电子特性及iii -氮化物场效应管的基础
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.013
P. Asbeck
{"title":"Electronic properties of III-nitride materials and basics of III-nitride FETs","authors":"P. Asbeck","doi":"10.1016/bs.semsem.2019.08.013","DOIUrl":"https://doi.org/10.1016/bs.semsem.2019.08.013","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"90 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83929589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
III-Nitride ultra-wide-bandgap electronic devices iii .氮化物超宽带隙电子器件
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.005
R. Kaplar, A. Allerman, A. Armstrong, A. Baca, M. Crawford, J. Dickerson, E. Douglas, A. Fischer, B. Klein, Shahed Reza
{"title":"III-Nitride ultra-wide-bandgap electronic devices","authors":"R. Kaplar, A. Allerman, A. Armstrong, A. Baca, M. Crawford, J. Dickerson, E. Douglas, A. Fischer, B. Klein, Shahed Reza","doi":"10.1016/bs.semsem.2019.08.005","DOIUrl":"https://doi.org/10.1016/bs.semsem.2019.08.005","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72831339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Emerging materials, processing and device concepts 新兴材料，加工和器件概念
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.011
D. Meyer, D. Katzer, M. Hardy, N. Nepal, B. Downey
{"title":"Emerging materials, processing and device concepts","authors":"D. Meyer, D. Katzer, M. Hardy, N. Nepal, B. Downey","doi":"10.1016/bs.semsem.2019.08.011","DOIUrl":"https://doi.org/10.1016/bs.semsem.2019.08.011","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"70 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86325653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Index 指数
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/s0080-8784(19)30081-x
{"title":"Index","authors":"","doi":"10.1016/s0080-8784(19)30081-x","DOIUrl":"https://doi.org/10.1016/s0080-8784(19)30081-x","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"85 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73608753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physics-based III-Nitride device modeling 基于物理的iii -氮化物器件建模
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.002
U. Radhakrishna
{"title":"Physics-based III-Nitride device modeling","authors":"U. Radhakrishna","doi":"10.1016/bs.semsem.2019.08.002","DOIUrl":"https://doi.org/10.1016/bs.semsem.2019.08.002","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"46 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79725637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
III-Nitride p-channel transistors 氮化p沟道晶体管
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.006
A. Nakajima
{"title":"III-Nitride p-channel transistors","authors":"A. Nakajima","doi":"10.1016/bs.semsem.2019.08.006","DOIUrl":"https://doi.org/10.1016/bs.semsem.2019.08.006","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"356 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78339227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Copyright 版权
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/s0080-8784(19)30077-8
{"title":"Copyright","authors":"","doi":"10.1016/s0080-8784(19)30077-8","DOIUrl":"https://doi.org/10.1016/s0080-8784(19)30077-8","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":" 410","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91410185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Series Page 系列页面
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/s0080-8784(19)30075-4
{"title":"Series Page","authors":"","doi":"10.1016/s0080-8784(19)30075-4","DOIUrl":"https://doi.org/10.1016/s0080-8784(19)30075-4","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"30 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80330397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
III-Nitride millimeter wave transistors 氮化毫米波晶体管
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.010
K. Shinohara
{"title":"III-Nitride millimeter wave transistors","authors":"K. Shinohara","doi":"10.1016/bs.semsem.2019.08.010","DOIUrl":"https://doi.org/10.1016/bs.semsem.2019.08.010","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"68 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89568624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
III-Nitride lateral transistor power switch 氮化横向晶体管电源开关
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.007
Sang-Woo Han, R. Chu
{"title":"III-Nitride lateral transistor power switch","authors":"Sang-Woo Han, R. Chu","doi":"10.1016/bs.semsem.2019.08.007","DOIUrl":"https://doi.org/10.1016/bs.semsem.2019.08.007","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"62 3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88678674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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