氮化横向晶体管电源开关

{"title":"氮化横向晶体管电源开关","authors":"Sang-Woo Han, R. Chu","doi":"10.1016/bs.semsem.2019.08.007","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"62 3 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"III-Nitride lateral transistor power switch\",\"authors\":\"Sang-Woo Han, R. Chu\",\"doi\":\"10.1016/bs.semsem.2019.08.007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":13350,\"journal\":{\"name\":\"III-Nitride Electronic Devices\",\"volume\":\"62 3 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"III-Nitride Electronic Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1016/bs.semsem.2019.08.007\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"III-Nitride Electronic Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/bs.semsem.2019.08.007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}