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Training of Precise Movements in 3D or 2D for Persons with Parkinson’s Disease? 帕金森病患者的3D或2D精确运动训练?
III-Nitride Electronic Devices Pub Date : 2019-03-01 DOI: 10.6025/ED/2019/8/1/7-9
I. Cikajlo, Z. Matjačić, H. Burger, K. Potisk
{"title":"Training of Precise Movements in 3D or 2D for Persons with Parkinson’s Disease?","authors":"I. Cikajlo, Z. Matjačić, H. Burger, K. Potisk","doi":"10.6025/ED/2019/8/1/7-9","DOIUrl":"https://doi.org/10.6025/ED/2019/8/1/7-9","url":null,"abstract":"The 10 Cubes for training and assessment of precise movements with upper extremities has been developed for 3D virtual reality. The system comprises of an infrared stereo camera for hand/finger movements detection and a 3D head mounted device. In the small scale study 13 persons with Parkinson’s disease participated. The participants were randomized into 2 groups; one using a laptop and the other using a 3D head mounted device. The 2-week protocol with 10 sessions, each lasting for 30 min revealed that participants improved some functions by clinical means besides the successful game performance. The kinematics of the hand movements and the outcomes of the clinical test Box & blocks improved for both groups.","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76975465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Digital Italy: Teacher Training as a Prerequisite for Economic Progress 数字意大利:教师培训是经济发展的先决条件
III-Nitride Electronic Devices Pub Date : 2019-03-01 DOI: 10.6025/ed/2019/8/1/10-16
D. Bearden
{"title":"Digital Italy: Teacher Training as a Prerequisite for Economic Progress","authors":"D. Bearden","doi":"10.6025/ed/2019/8/1/10-16","DOIUrl":"https://doi.org/10.6025/ed/2019/8/1/10-16","url":null,"abstract":"Teaching and learning using digital technology is a concern to policy makers in Italy. All the European states are concerned about cognitonics in education. How will the emerging Digital Italy project affect emerging adults in the knowledge economy? What can be gained by expanding broadband capacity to all of Italy’s school population and at what cost? Does the use of emerging technology improve human contact and does it create opportunity for youth employment after graduation? Will university enrollment increase? This paper provides a snapshot of the cyber readiness of Italy at the midpoint of deploying Digital Italy.","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78917065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Telemetric ECG Monitoring During Physical Activity in Field Tests 野外试验中体力活动时的遥测心电监测
III-Nitride Electronic Devices Pub Date : 2019-03-01 DOI: 10.6025/ed/2019/8/1/1-6
B. Siraiy, R. Trobec
{"title":"Telemetric ECG Monitoring During Physical Activity in Field Tests","authors":"B. Siraiy, R. Trobec","doi":"10.6025/ed/2019/8/1/1-6","DOIUrl":"https://doi.org/10.6025/ed/2019/8/1/1-6","url":null,"abstract":"In this paper we show how it is possible to measure ECG signal with telemetric ECG body-sensor during physical activity in regular conditions. Based on previous studies we choose position and type of fixation for sensor. Participant made three different tests, first test was shuttle run test where speed of running was increased every minute, second test was Cooper 2400 m test, and third test was 100 m maximal sprint. We measure ECG signal in all three tests and analyse it with special software for Holter analysis.","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77718402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An Ethnographic Study of Mobile Videogames for English Vocabulary Development In Urban China 手机电子游戏对中国城市英语词汇发展的民族志研究
III-Nitride Electronic Devices Pub Date : 2019-03-01 DOI: 10.6025/ed/2019/8/1/17-21
Paul Craig, Néna Roa-Seïler, Zongjie Wang
{"title":"An Ethnographic Study of Mobile Videogames for English Vocabulary Development In Urban China","authors":"Paul Craig, Néna Roa-Seïler, Zongjie Wang","doi":"10.6025/ed/2019/8/1/17-21","DOIUrl":"https://doi.org/10.6025/ed/2019/8/1/17-21","url":null,"abstract":"This study investigates the effectiveness of mobile video games for learning English language vocabulary among Chinese students in comparison with more standard electronic dictionary learning. This involved an ethnographic study of students in their natural learning environment which was followed by classroom testing of vocabulary proficiency. Results show that educational video games can both improve the student learning experience and student results when combined with traditional methods.","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89558423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Contributors 贡献者
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/s0080-8784(19)30079-1
{"title":"Contributors","authors":"","doi":"10.1016/s0080-8784(19)30079-1","DOIUrl":"https://doi.org/10.1016/s0080-8784(19)30079-1","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"79 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83864642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
N-polar III-nitride transistors n极iii型氮化晶体管
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.012
M. Wong, Umesh K. Mishra
{"title":"N-polar III-nitride transistors","authors":"M. Wong, Umesh K. Mishra","doi":"10.1016/bs.semsem.2019.08.012","DOIUrl":"https://doi.org/10.1016/bs.semsem.2019.08.012","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73535867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Power electronics applications of III-nitride transistors
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.009
YiFeng Wu
{"title":"Power electronics applications of III-nitride transistors","authors":"YiFeng Wu","doi":"10.1016/bs.semsem.2019.08.009","DOIUrl":"https://doi.org/10.1016/bs.semsem.2019.08.009","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79387157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
III-Nitride vertical devices iii -氮化垂直装置
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.004
T. Oka
{"title":"III-Nitride vertical devices","authors":"T. Oka","doi":"10.1016/bs.semsem.2019.08.004","DOIUrl":"https://doi.org/10.1016/bs.semsem.2019.08.004","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77055349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial lift-off for III-nitride devices iii -氮化物器件的外延提升
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.003
C. Youtsey, R. McCarthy, P. Fay
{"title":"Epitaxial lift-off for III-nitride devices","authors":"C. Youtsey, R. McCarthy, P. Fay","doi":"10.1016/bs.semsem.2019.08.003","DOIUrl":"https://doi.org/10.1016/bs.semsem.2019.08.003","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"30 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91430436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Epitaxial growth of III-nitride electronic devices iii -氮化物电子器件的外延生长
III-Nitride Electronic Devices Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.008
Yu Cao
{"title":"Epitaxial growth of III-nitride electronic devices","authors":"Yu Cao","doi":"10.1016/bs.semsem.2019.08.008","DOIUrl":"https://doi.org/10.1016/bs.semsem.2019.08.008","url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"34 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78435961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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