发布求助
文献互助 智能选刊 最新文献

2012 International Conference on Optoelectronics and Microelectronics最新文献

筛选
英文 中文
Laser and one-dimensional PDA on the elevator overspeed measuring 激光和一维PDA对电梯超速进行测量
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316224
G. Jin, Peng Xu, Yingjie Zhao, L. Wan, Botao Hao, Xiaoguang Li, Yusi Zhao
{"title":"Laser and one-dimensional PDA on the elevator overspeed measuring","authors":"G. Jin, Peng Xu, Yingjie Zhao, L. Wan, Botao Hao, Xiaoguang Li, Yusi Zhao","doi":"10.1109/ICOOM.2012.6316224","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316224","url":null,"abstract":"This paper provide a new method of elevator overspeed measurement. Helium-Neon laser is mounted vertically on the surface of the elevator car. One-dimensional photodiode array(PDA) is installed at the top of the shaft. The laser beam passes through the beam shaping lens for good homogeneity and proper divergence angle. According to the total height of shaft and the divergence angle θ=0.4mrad, the spot radii in different heights of elevator car are measured. On the basis of small divergence angle a model proposed that the beam radii change linearly with the heights of elevator car. The interval in adjacent detection units is determined in this model. The laser spot is spreading from center to edge when the elevator car is moving down. The time interval of signals in adjacent detection units are measured by timing circuit. When the elevator is running in maximal speed, the time interval of signals is defined as time threshold. Time intervals of signals are compared with time threshold. Time intervals of signals are greater than time threshold that elevator running normally, time intervals of signals are less than t0 that elevator overspeed.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129731611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The simulation analysis of GaInAsP/GaInP diode lasers emitting at 808 nm 808 nm发射GaInAsP/GaInP二极管激光器的仿真分析
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316236
Ke-rong Gai, Lin Li, Jinlong Zhao, Yong Wang, Te Li, P. Lu, Chang Su, Z. Li, Guojun Liu
{"title":"The simulation analysis of GaInAsP/GaInP diode lasers emitting at 808 nm","authors":"Ke-rong Gai, Lin Li, Jinlong Zhao, Yong Wang, Te Li, P. Lu, Chang Su, Z. Li, Guojun Liu","doi":"10.1109/ICOOM.2012.6316236","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316236","url":null,"abstract":"The properties of the 808nm GaInAsP/GaInP quantum well structure lasers with asymmetric waveguide are numerically studied with a commercial LASTIP simulation program. The simulation results show that the laser performance of the 808nm GaInAsP/GaInP quantum well structure with asymmetric waveguide has a lower threshold current and higher slope efficiency, lower series resistance than symmetric waveguide the structure. Compared to symmetric structure, the lasers with asymmetric waveguide have a smaller band offset between waveguide and QW. These results indicate that a higher laser output power is obtained for the 808nmGaInAsP/GaInP quantum well structure with asymmetric waveguides.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124660143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A LD pumped gain switched Yb3+ doped double-cladding fiber laser LD泵浦增益开关掺Yb3+双包层光纤激光器
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316242
Wenjing Li, Ji Wang, Guiqi Liu, Guozheng Wang, Kai Chen, Linlin Lin, Yang Liu, Y. Liu
{"title":"A LD pumped gain switched Yb3+ doped double-cladding fiber laser","authors":"Wenjing Li, Ji Wang, Guiqi Liu, Guozheng Wang, Kai Chen, Linlin Lin, Yang Liu, Y. Liu","doi":"10.1109/ICOOM.2012.6316242","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316242","url":null,"abstract":"A gain-switched Ytterbium-doped double-cladding fiber laser pumped by a laser diode was presented. A diode laser with wavelength of 966nm and output power of 25W was adopted as the pump source. 11-meter long Yb-doped double-cladding fiber was used as gain medium. The output power and the pulse waveform of the laser were measured under different pulse width and different repetition frequency. The output power of the gain-switched fiber laser was 2.67W when the repetition frequency was 50Hz and the pulse width was 10ms, the corresponding conversion efficiency from light to light was 16.9%.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131185445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on laser diode incoherent beam combining technology based on tracepro 基于tracepro的激光二极管非相干光束组合技术研究
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316223
Yueyue Jin, Y. Zou, Xiao-hui Ma, Jie Li, Yang Li, L. Jin, Li Xu, Wei Zhao, Qingxue Sui, Zhimin Zhang
{"title":"Study on laser diode incoherent beam combining technology based on tracepro","authors":"Yueyue Jin, Y. Zou, Xiao-hui Ma, Jie Li, Yang Li, L. Jin, Li Xu, Wei Zhao, Qingxue Sui, Zhimin Zhang","doi":"10.1109/ICOOM.2012.6316223","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316223","url":null,"abstract":"Recently, many researches are focus on multi-beams combining technology, which is an effective method to realize high power and high brightness for laser diode, so it has the widely application in industry. This paper present the incoherent beam combining technology of laser diode, including space beam combining, wavelength beam combining and polarization beam combining. All of these technologies will be simulated by using tracepro, and a beam combining model will be constructed in principle, the advantages and disadvantages will be analysised, then the application field will be discussed.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126960044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Preparation and polymerization study of (C60)n@SWNTs (C60)n@SWNTs的制备及聚合研究
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316309
Danyang Wang, X. Zhou, Baoli Wang, Tao Liu, Xiuzhen Chang, Quanjun Wang
{"title":"Preparation and polymerization study of (C60)n@SWNTs","authors":"Danyang Wang, X. Zhou, Baoli Wang, Tao Liu, Xiuzhen Chang, Quanjun Wang","doi":"10.1109/ICOOM.2012.6316309","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316309","url":null,"abstract":"We report here a vapor diffusion method prepared peapod samples (C60 molecules in single walled carbon nanotubes (SWNTs)). The high pressure Raman measurements on the peapod samples by using a Mao-Bell type diamond anvil cell (DAC) will carry on under in situ or ex situ high pressure. The peapod samples will expose under UV laser line irradiation for the in situ high pressure investigation. The polymerization effect of C60 molecules inside SWNTs under both laser irradiation and pressure has been studied. The Raman spectra results of peapod samples from high pressure indicated that C60s become one-dimensional orthorhombic polymer.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"257 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116189541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The optical characterization of GaSb treatment by sodium sulfide solution 硫化钠溶液处理GaSb的光学表征
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316210
Y. Lang, Zhipeng Wei, Y. Zou, Mei Li, Y. Hao, Z. Li, Guojun Liu, Xiao-hui Ma, Jinhua Li, X. Fang, F. Fang, Shanshan Tian
{"title":"The optical characterization of GaSb treatment by sodium sulfide solution","authors":"Y. Lang, Zhipeng Wei, Y. Zou, Mei Li, Y. Hao, Z. Li, Guojun Liu, Xiao-hui Ma, Jinhua Li, X. Fang, F. Fang, Shanshan Tian","doi":"10.1109/ICOOM.2012.6316210","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316210","url":null,"abstract":"In this paper, the oxide layer of surface of GaSb could be removed by passivation solution. Moreover, different passivation solution have different passivation effect. After passivation treatment, the PL intensity was enlarged. Then the influence of prove passivation time on the intensity of PL was also discussed. When passivation time was 270s, the sample's intensity of PL was the strongest. Additionally, this passivation treatment could improve the whole substrate's PL intensity.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116367382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of N incorporation on the carrier concentration of sputtering-deposited a-GaAs1−xNx thin films N掺杂对溅射沉积a-GaAs1−xNx薄膜载流子浓度的影响
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316204
Baoshan Jia, Lu Zhou, Yuhua Wang, Duanyuan Bai, Z. Qiao, Xin Gao, B. Bo
{"title":"Influence of N incorporation on the carrier concentration of sputtering-deposited a-GaAs1−xNx thin films","authors":"Baoshan Jia, Lu Zhou, Yuhua Wang, Duanyuan Bai, Z. Qiao, Xin Gao, B. Bo","doi":"10.1109/ICOOM.2012.6316204","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316204","url":null,"abstract":"This work reported the changes in the carrier concentration of a-GaAs1-xNx thin films with different x value. The films were deposited by reactive magnetron sputtering at different sputtering pressure. The N content in the film increases by increasing the sputtering pressures. The free carrier concentration is increased as the N content increased.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126682138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis simulation of facet temperature in semiconductor lasers 半导体激光器表面温度的分析仿真
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316229
X. Zheng, Zaijin Li, Te Li, P. Lu, Yong Wang, Y. Zou, Y. Qu, B. Bo, Guojun Liu, Xiao-hui Ma
{"title":"Analysis simulation of facet temperature in semiconductor lasers","authors":"X. Zheng, Zaijin Li, Te Li, P. Lu, Yong Wang, Y. Zou, Y. Qu, B. Bo, Guojun Liu, Xiao-hui Ma","doi":"10.1109/ICOOM.2012.6316229","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316229","url":null,"abstract":"This paper analyzes the damage mechanism of the semiconductor laser cavity surface. Catastrophic optical damage (COD) is one of major mechanisms, which drastically limits laser lifetime and emitted optical power. This paper builds the theoretical model that based on heat source with injection current and optical power to describe the temperature distribution of laser. Through analyzing the edge-emitting semiconductor lasers by using ANSYS, we can describe change of facet temperature distribution before and after the COD events. Through the results of simulation, we can get the conclusion that the main reason of COD is oxidation of the semiconductor laser in facet which caused by optical absorption.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126697108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of high-power diode laser driver under high-temperature environment 高温环境下大功率二极管激光驱动器的设计
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316237
G. Zhou, Xuesong Zhang, Jun Cai
{"title":"Design of high-power diode laser driver under high-temperature environment","authors":"G. Zhou, Xuesong Zhang, Jun Cai","doi":"10.1109/ICOOM.2012.6316237","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316237","url":null,"abstract":"Diode laser driver's performance directly affects the output stability and life of laser device. A design method of 100W high power fiber coupled diode laser module driver is described under 40°C high-temperature environment in this paper, and its main contents include: constant-current source design, TEC double direction temperature controller, corresponding MCU controller and protection circuit design. The diode laser driver achieves the following functions: output current can be continuously adjusted from 0-45A; Current control accuracy is better than 2%; Range of temperature control is +15°C-+35°C; and temperature control precision is 0.5°C.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126260638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All fiber coherent doppler lidar for space craft safe landing 全光纤相干多普勒激光雷达用于航天器安全着陆
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316251
Xiao-lin Sui, S. Zhou, Nian-jiang Chen, Hong Zhao, Lin Geng, Chang-dong Cao, Zi-heng Yan, W. Xiong
{"title":"All fiber coherent doppler lidar for space craft safe landing","authors":"Xiao-lin Sui, S. Zhou, Nian-jiang Chen, Hong Zhao, Lin Geng, Chang-dong Cao, Zi-heng Yan, W. Xiong","doi":"10.1109/ICOOM.2012.6316251","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316251","url":null,"abstract":"Recent advances in fiber optic component technology and digital processing components have enabled the development of a new coherent doppler lidar (CDL) system based upon a fiber optic FMCW, which has small size and light weight. CDL can give high precision velocity measurements data and range measurements data which support space craft safe landing. We designed and implemented a CDL of all-fiber structure in this article. First of all, FMCW ranging theory was described. Second, the CDL architecture of the system was discussed. Last, we introduced radar fiber Coupling and signal processor part, which include signal acquisition hardware, signal processing of dedicated FFT based on FPGA. The experimental program and experimental results were presented in the paper. We analyzed the experimental results carefully. From the results, the project has the advantage of large velocimetry range (-100m/S~+100m/S) and high velocimetry accuracy (0.5%). It completely meted the requirement of Space Craft Safe Landing.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127989655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信