The simulation analysis of GaInAsP/GaInP diode lasers emitting at 808 nm

Abstract

The properties of the 808nm GaInAsP/GaInP quantum well structure lasers with asymmetric waveguide are numerically studied with a commercial LASTIP simulation program. The simulation results show that the laser performance of the 808nm GaInAsP/GaInP quantum well structure with asymmetric waveguide has a lower threshold current and higher slope efficiency, lower series resistance than symmetric waveguide the structure. Compared to symmetric structure, the lasers with asymmetric waveguide have a smaller band offset between waveguide and QW. These results indicate that a higher laser output power is obtained for the 808nmGaInAsP/GaInP quantum well structure with asymmetric waveguides.