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ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference最新文献

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Superimposed Bragg Gratings on Semiconductor Material 半导体材料上的叠加布拉格光栅
ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference Pub Date : 1996-09-01 DOI: 10.1049/EL:19961269
A. Talneau, J. Charil, A. Ougazzaden
{"title":"Superimposed Bragg Gratings on Semiconductor Material","authors":"A. Talneau, J. Charil, A. Ougazzaden","doi":"10.1049/EL:19961269","DOIUrl":"https://doi.org/10.1049/EL:19961269","url":null,"abstract":"We report the transfert of six Bragg gratings at the same location into semiconductor material. Measurements on an active device demonstrates that all the gratings have the same efficiency on guided light. This technology is an attractive alternative to sampling effect to provide the multiwavelength filter functionnality at predefined wavelengths.","PeriodicalId":128806,"journal":{"name":"ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126137152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFET's 氮化侧壁垫片对MOSFET热载流子可靠性特性的影响
ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference Pub Date : 1996-09-01 DOI: 10.7567/SSDM.1996.PC-4-6
H. Hwang, Dong-Hoon Lee, J. Hwang
{"title":"Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFET's","authors":"H. Hwang, Dong-Hoon Lee, J. Hwang","doi":"10.7567/SSDM.1996.PC-4-6","DOIUrl":"https://doi.org/10.7567/SSDM.1996.PC-4-6","url":null,"abstract":"In this paper, we have compared the reliability characteristics of MOSFET with nitride sidewall and oxide sidewall spacer. We found that the unique reliability characteristics of nitride sidewall spacer device. At the initial stage of stress, large degradation of drain current occurs for nitride sidewall device at low stress drain bias due to the enhanced trapping of nitride spacer. However, nitride sidewall devices exhibit improvement of device lifetime which was defined as a 10% degradation of drain current.","PeriodicalId":128806,"journal":{"name":"ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131769913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single-Beam and Single-Mode Emission from Surface Emitting Laser Diodes based on Surface Mode Emission 基于表面模式发射的表面发射激光二极管单光束和单模发射
ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference Pub Date : 1996-09-01 DOI: 10.1109/LEOS.1996.565157
A. Kock, A. Golshani, R. Hainberger, E. Gornik, L. Korte
{"title":"Single-Beam and Single-Mode Emission from Surface Emitting Laser Diodes based on Surface Mode Emission","authors":"A. Kock, A. Golshani, R. Hainberger, E. Gornik, L. Korte","doi":"10.1109/LEOS.1996.565157","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565157","url":null,"abstract":"Single-beam and single-mode emission from surface-mode-emitting-(SME)-laser diodes is reported for the first time. The laser diodes emit via the surface into a single-beam with a beam divergence of 0.15° and show under pulsed operation a single-mode emission. The crucial feature of SME-laser diodes is their flexible processing, which enables the fabrication of laser diodes with desired radiation and emission characteristics.","PeriodicalId":128806,"journal":{"name":"ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130336112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
0.2μm T-gate InP/InGaAs/ InP pHEMT with an InGaP diffusion barrier layer grown by LP-MOCVD using an N2-carrier 0.2μm t栅InP/InGaAs/ InP pHEMT，采用LP-MOCVD生长InGaP扩散势垒层，采用n2载流子
ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference Pub Date : 1996-06-26 DOI: 10.1109/DRC.1996.546340
K. Schimpf, M. Hollfelder, M. Horstmann, M. Marso, H. Hardtdegen, P. Kordos
{"title":"0.2μm T-gate InP/InGaAs/ InP pHEMT with an InGaP diffusion barrier layer grown by LP-MOCVD using an N2-carrier","authors":"K. Schimpf, M. Hollfelder, M. Horstmann, M. Marso, H. Hardtdegen, P. Kordos","doi":"10.1109/DRC.1996.546340","DOIUrl":"https://doi.org/10.1109/DRC.1996.546340","url":null,"abstract":"We report on the development of an Al-free InP/InGaAs/InP HEMT that is grown by LP-MOCVD using an N<inf>2</inf> carrier. We demonstrate that Zn diffusion affects the performance of those HEMTs and can be reduced by inserting an In<inf>0.5</inf>Ga<inf>0.5</inf>P diffusion barrier layer. Devices with a 0.2μm T-Gate yield the cutoff frequencies of f<inf>T</inf>= 135GHz and f<inf>max</inf>= 200GHz. The performance especially of f<inf>max</inf> is limited by the high output conductance and can be improved by reducing the In content of the channel from 77% to 68%.","PeriodicalId":128806,"journal":{"name":"ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129617008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Microtransducer CAD Microtransducer CAD
ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference Pub Date : 1900-01-01 DOI: 10.1007/978-3-7091-6428-0
A. Nathan
{"title":"Microtransducer CAD","authors":"A. Nathan","doi":"10.1007/978-3-7091-6428-0","DOIUrl":"https://doi.org/10.1007/978-3-7091-6428-0","url":null,"abstract":"","PeriodicalId":128806,"journal":{"name":"ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124928218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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