氮化侧壁垫片对MOSFET热载流子可靠性特性的影响

ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference Pub Date : 1996-09-01 DOI:10.7567/SSDM.1996.PC-4-6

H. Hwang, Dong-Hoon Lee, J. Hwang

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引用次数: 0

摘要

本文比较了氮化侧壁和氧化侧壁垫片MOSFET的可靠性特性。研究发现氮化侧壁隔离装置具有独特的可靠性特点。在应力初始阶段，氮化侧壁器件在低应力漏极偏压下，由于氮化隔层的捕集增强，漏极电流出现了较大的衰减。然而，氮化侧壁器件表现出器件寿命的改善，其定义为漏极电流下降10%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFET's

In this paper, we have compared the reliability characteristics of MOSFET with nitride sidewall and oxide sidewall spacer. We found that the unique reliability characteristics of nitride sidewall spacer device. At the initial stage of stress, large degradation of drain current occurs for nitride sidewall device at low stress drain bias due to the enhanced trapping of nitride spacer. However, nitride sidewall devices exhibit improvement of device lifetime which was defined as a 10% degradation of drain current.

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ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference

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