0.2μm t栅InP/InGaAs/ InP pHEMT，采用LP-MOCVD生长InGaP扩散势垒层，采用n2载流子

ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference Pub Date : 1996-06-26 DOI:10.1109/DRC.1996.546340

K. Schimpf, M. Hollfelder, M. Horstmann, M. Marso, H. Hardtdegen, P. Kordos

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引用次数: 3

摘要

我们报道了一种无al的InP/InGaAs/InP HEMT的发展，该HEMT是由LP-MOCVD使用N2载流子生长的。我们证明了锌的扩散会影响这些hemt的性能，并且可以通过插入In0.5Ga0.5P扩散阻挡层来降低。采用0.2μm t栅极的器件的截止频率为fT= 135GHz和fmax= 200GHz。特别是fmax的性能受到高输出电导的限制，可以通过将通道的In含量从77%降低到68%来改善。

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0.2μm T-gate InP/InGaAs/ InP pHEMT with an InGaP diffusion barrier layer grown by LP-MOCVD using an N2-carrier

We report on the development of an Al-free InP/InGaAs/InP HEMT that is grown by LP-MOCVD using an N2 carrier. We demonstrate that Zn diffusion affects the performance of those HEMTs and can be reduced by inserting an In0.5Ga0.5P diffusion barrier layer. Devices with a 0.2μm T-Gate yield the cutoff frequencies of fT= 135GHz and fmax= 200GHz. The performance especially of fmax is limited by the high output conductance and can be improved by reducing the In content of the channel from 77% to 68%.

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ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference

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