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2016 5th International Symposium on Next-Generation Electronics (ISNE)最新文献

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Empirical research of using digital addressing LED energy-saving lighting control system — The case of underground parking lot: Preparation of papers in two-column format for ISNE 2016 采用数字寻址LED节能照明控制系统的实证研究——以地下停车场为例:ISNE 2016两栏论文准备
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543344
Shang-Hui Yang, Qing-Shan Chang, Ding-Chin Chou
{"title":"Empirical research of using digital addressing LED energy-saving lighting control system — The case of underground parking lot: Preparation of papers in two-column format for ISNE 2016","authors":"Shang-Hui Yang, Qing-Shan Chang, Ding-Chin Chou","doi":"10.1109/ISNE.2016.7543344","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543344","url":null,"abstract":"A conventional lamp may tend to be of high power consumption because aging and the lamp cover discolors. According to the study, after the conventional lamp is replaced by the proposed lamp, the proposed lamp can save about 65% of the power consumption. On the other hand, the study finds out the best luminous efficiency of the main body by the addressable lamp control method, and we calculate the possible illumination intensity via the lighting simulation software so as to check whether the proposed lamp conforms to the illumination standards and the safety illumination standards. After the whole simulation is finished, we actually replace the conventional lamp by the proposed lamp, and then practically test the total power consumption efficiency during two weeks. Afterward, we find that the power saving rate can be up to 77.5%. In other words, in addition to the original saved efficiency by using proposed lamps, the control system can further create 12.5% power saving rate, and provide an environment with good light quality and safe usage site. The study adopts the currently available T5 lamp with high luminous efficiency for users to conveniently replace the lamp by themselves, which can solve the matching problem that the lighting control systems have. Therefore, the study provides a best solution for public constructions of lamp replacement.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120926872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fault diagnosis of joint Bayesian method and LDA feature extraction in complicated industrial process 复杂工业过程中贝叶斯方法与LDA特征提取的联合故障诊断
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543350
Wenbing Zhu, Guangzao Huang, Jinting Guan, Guoli Ji, Sun Zhou
{"title":"Fault diagnosis of joint Bayesian method and LDA feature extraction in complicated industrial process","authors":"Wenbing Zhu, Guangzao Huang, Jinting Guan, Guoli Ji, Sun Zhou","doi":"10.1109/ISNE.2016.7543350","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543350","url":null,"abstract":"Bayesian method is a class of data-driven fault diagnosis method which is a topic of significant practical interest. In order to improve diagnosis accuracy and reduce computation load, linear discriminant analysis (LDA) is employed to extract features before performing Bayesian diagnosis. It can maximize the explicit function to achieve the goal that within-class data points as close as possible and between-class data points as far as possible. Tennessee Eastman Challenge (TE) is utilized to verify the effectiveness of the proposed method.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122696612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Color uniformity enhancement for white light LED lamps by quartz particles 石英颗粒增强白光LED灯的色彩均匀性
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543301
N. Q. Anh, Thoai Phu Vo
{"title":"Color uniformity enhancement for white light LED lamps by quartz particles","authors":"N. Q. Anh, Thoai Phu Vo","doi":"10.1109/ISNE.2016.7543301","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543301","url":null,"abstract":"We present a novel method to improve color uniformity for a multi-chip white light LED. By adding quartz (SiO2) particles with suitable parameters in the phosphor layer, scattering enhancement of phosphor compound can be occurred, resulting in the higher color uniformity. The scattering ability of SiO2 particle is verified based on Mie-scattering theory. The simulation results demonstrate that the deviation of correlated color temperature (CCT) increases from 3086 K to 1956 K at the mean CCT of 8500 K.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"653 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117104391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis and design of a 400MHz-6GHz quadrature demodulator with high linearity 400MHz-6GHz高线性正交解调器的分析与设计
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543377
Yadi Guo, Jun Fu, B. Chi, Yudong Wang, Jie Cui
{"title":"Analysis and design of a 400MHz-6GHz quadrature demodulator with high linearity","authors":"Yadi Guo, Jun Fu, B. Chi, Yudong Wang, Jie Cui","doi":"10.1109/ISNE.2016.7543377","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543377","url":null,"abstract":"In the paper, a high linearity quadrature demodulator based on SiGe BiCMOS process is designed and implemented for 400MHz to 6GHz wireless communication application. The 3rd intermodulation cancellation technique is applied to improve linearity. A negative feedback structure is applied to Gilbert mixer to lower its input impedance and expand its bandwidth. Quadrature local oscillator signal generator is integrated, with excellent quadrature performance in the whole band. Measurement results show excellent performance in the frequency band of 400MHz to 6GHz.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123714537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Dominating factors for efficiency enhancement of AZO embedded OLEDs 影响AZO嵌入式oled效率提升的主要因素
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543389
Wen-Tuan Wu, B. Lin, Yin-Xing Zeng, Wei-Ming Lin, U-Jin Peng, Ching-Ming Hsu
{"title":"Dominating factors for efficiency enhancement of AZO embedded OLEDs","authors":"Wen-Tuan Wu, B. Lin, Yin-Xing Zeng, Wei-Ming Lin, U-Jin Peng, Ching-Ming Hsu","doi":"10.1109/ISNE.2016.7543389","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543389","url":null,"abstract":"Aluminum zinc oxide (AZO) was embedded onto indium tin oxide (ITO) to serve as an anode for OLEDs. Optical, electrical and surface morphological properties of AZO embedded ITO films were examined to determine the dominating factors for the characteristic enhancement of OLEDs. Results showed up to 46% current efficiency enhancement could be reached as a consequence of the optical effect generated by the embedded AZO.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126652937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of non-intrusive conductance sensors to local measurement of two-phase flow 非侵入式电导传感器在两相流局部测量中的应用
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543335
Min-Lun Chai, Feng-Jiun Kuo, Shao-Wen Chen, Jong-Rong Wang, Jin-Der Lee, C. Shih
{"title":"Application of non-intrusive conductance sensors to local measurement of two-phase flow","authors":"Min-Lun Chai, Feng-Jiun Kuo, Shao-Wen Chen, Jong-Rong Wang, Jin-Der Lee, C. Shih","doi":"10.1109/ISNE.2016.7543335","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543335","url":null,"abstract":"Void fraction is an important parameter in two-phase flow system, and an accurate measuring technique is essential. In order to avoid any distortion by an intrusive measurement, the non-intrusive conductance sensor was chosen in this study to measure the local signals in vertical rectangular tubes. The experimental conditions were fixed superficial water velocity (Jw) at 0.417m/s and various superficial air velocity(Ja) at 0.125~0.417m/s. NI-6255 was utilized as the data acquisition system. The results include 3-D mesh of all signals and the transient signal as well as the frequency of specific sensors. It was observed that the non-intrusive conductance sensor is an effective method to measure void fraction.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126350581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial growth of GaN on porous Si (111) substrate GaN在多孔Si(111)衬底上的外延生长
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543306
Zhenyu Jin, Lei Guo, Lei Xiao, R. Liang, Jing Wang
{"title":"Epitaxial growth of GaN on porous Si (111) substrate","authors":"Zhenyu Jin, Lei Guo, Lei Xiao, R. Liang, Jing Wang","doi":"10.1109/ISNE.2016.7543306","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543306","url":null,"abstract":"The growth of GaN on porous (111) Si is studied by adjusting the depth and structure of the porous layer. It is shown that deep porous layer with high porosity on Si substrate can remarkably reduce cracks and improve crystal quality of the epitaxial GaN layer, while a shallow porous layer with low porosity causes vertical cracks across from the Si substrate to GaN layer. The porous substrate is beneficial to release the stress caused by their thermal mismatch.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"82 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114105623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of SiO2 size on the optical performance of white LED packages SiO2尺寸对白光LED封装光学性能的影响
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543302
N. Q. Anh, Thoai Phu Vo
{"title":"The effect of SiO2 size on the optical performance of white LED packages","authors":"N. Q. Anh, Thoai Phu Vo","doi":"10.1109/ISNE.2016.7543302","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543302","url":null,"abstract":"In this paper, we propose a method to improve the performance of the multi-chip white light LED packages by the sizes and structures of silicon dioxides (SiO2). Through the research results, it is suggested that the hybrid SiO2 structure with its size around can be suitable for obtaining higher color uniformity.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122061328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An ASIC chip for DNA droplets arrangement and detection system 一种用于DNA液滴排列和检测系统的ASIC芯片
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543356
Wei-Jie Wen, J. Liou
{"title":"An ASIC chip for DNA droplets arrangement and detection system","authors":"Wei-Jie Wen, J. Liou","doi":"10.1109/ISNE.2016.7543356","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543356","url":null,"abstract":"An ASIC chip of inkjet printer heads system and multi-channel printhead jets using novel encoding algorithm system. Addressing N bits jets elements switch circuit system is using in inkjet chip. Logic functions integrated, enabling TIJ-based products has become increasingly high-end market. Inkjet printers can put small number of DNA droplets (usually only a few picoliters, 10-12 liters) accurately sprayed on to DNA glasses media. Integrated circuit of the TIJ described transducer array to provide the 1024 ejection jets, includes a data interface, an DNA ink-jet treatment, short-pulse generation and bidirectional method operation. The chip system also has an output function to manage of multi-chip electronic components into larger arrays. TIJ spray hole array chip design architecture that allows less than 10 input lines op addressing 1024 nozzles.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115053865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reducing electrochemical exfoliated graphene defects by changing the insert voltage and electrolyte composition 通过改变插入电压和电解质成分来减少电化学脱落石墨烯缺陷
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543319
Yi-Tsung Chang, Ching-Tsang Chang, Guan-Sian Li, T. Horng
{"title":"Reducing electrochemical exfoliated graphene defects by changing the insert voltage and electrolyte composition","authors":"Yi-Tsung Chang, Ching-Tsang Chang, Guan-Sian Li, T. Horng","doi":"10.1109/ISNE.2016.7543319","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543319","url":null,"abstract":"In the experiments of electrochemical exfoliated graphene, the insert voltage1~3V and electrolyte composition of 2.4g sulfuric acid, 0 ~5 mL of 30% KOH and 100 mL of deionized water should were changed to find their relationship with graphene defects. Analysis of Raman spectra illustrated that using a lower insert voltage and a OH-: H+ ratio for the electrolyte of 1:2 reduced the number of defects. Its defect ratio ID/IG was 0.5.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"50 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124974435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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