Zhenyu Jin, Lei Guo, Lei Xiao, R. Liang, Jing Wang
{"title":"GaN在多孔Si(111)衬底上的外延生长","authors":"Zhenyu Jin, Lei Guo, Lei Xiao, R. Liang, Jing Wang","doi":"10.1109/ISNE.2016.7543306","DOIUrl":null,"url":null,"abstract":"The growth of GaN on porous (111) Si is studied by adjusting the depth and structure of the porous layer. It is shown that deep porous layer with high porosity on Si substrate can remarkably reduce cracks and improve crystal quality of the epitaxial GaN layer, while a shallow porous layer with low porosity causes vertical cracks across from the Si substrate to GaN layer. The porous substrate is beneficial to release the stress caused by their thermal mismatch.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"82 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Epitaxial growth of GaN on porous Si (111) substrate\",\"authors\":\"Zhenyu Jin, Lei Guo, Lei Xiao, R. Liang, Jing Wang\",\"doi\":\"10.1109/ISNE.2016.7543306\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth of GaN on porous (111) Si is studied by adjusting the depth and structure of the porous layer. It is shown that deep porous layer with high porosity on Si substrate can remarkably reduce cracks and improve crystal quality of the epitaxial GaN layer, while a shallow porous layer with low porosity causes vertical cracks across from the Si substrate to GaN layer. The porous substrate is beneficial to release the stress caused by their thermal mismatch.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"82 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543306\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Epitaxial growth of GaN on porous Si (111) substrate
The growth of GaN on porous (111) Si is studied by adjusting the depth and structure of the porous layer. It is shown that deep porous layer with high porosity on Si substrate can remarkably reduce cracks and improve crystal quality of the epitaxial GaN layer, while a shallow porous layer with low porosity causes vertical cracks across from the Si substrate to GaN layer. The porous substrate is beneficial to release the stress caused by their thermal mismatch.