GaN在多孔Si(111)衬底上的外延生长

2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI:10.1109/ISNE.2016.7543306

Zhenyu Jin, Lei Guo, Lei Xiao, R. Liang, Jing Wang

{"title":"GaN在多孔Si(111)衬底上的外延生长","authors":"Zhenyu Jin, Lei Guo, Lei Xiao, R. Liang, Jing Wang","doi":"10.1109/ISNE.2016.7543306","DOIUrl":null,"url":null,"abstract":"The growth of GaN on porous (111) Si is studied by adjusting the depth and structure of the porous layer. It is shown that deep porous layer with high porosity on Si substrate can remarkably reduce cracks and improve crystal quality of the epitaxial GaN layer, while a shallow porous layer with low porosity causes vertical cracks across from the Si substrate to GaN layer. The porous substrate is beneficial to release the stress caused by their thermal mismatch.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"82 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Epitaxial growth of GaN on porous Si (111) substrate\",\"authors\":\"Zhenyu Jin, Lei Guo, Lei Xiao, R. Liang, Jing Wang\",\"doi\":\"10.1109/ISNE.2016.7543306\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth of GaN on porous (111) Si is studied by adjusting the depth and structure of the porous layer. It is shown that deep porous layer with high porosity on Si substrate can remarkably reduce cracks and improve crystal quality of the epitaxial GaN layer, while a shallow porous layer with low porosity causes vertical cracks across from the Si substrate to GaN layer. The porous substrate is beneficial to release the stress caused by their thermal mismatch.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"82 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543306\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

通过调整多孔层的深度和结构，研究了氮化镓在多孔(111)Si上的生长。结果表明，在Si衬底上高孔隙率的深孔层可以显著减少裂纹，提高外延GaN层的晶体质量，而在Si衬底上低孔隙率的浅孔层会使外延GaN层与Si衬底之间产生垂直裂纹。多孔基板有利于释放热失配引起的应力。

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Epitaxial growth of GaN on porous Si (111) substrate

The growth of GaN on porous (111) Si is studied by adjusting the depth and structure of the porous layer. It is shown that deep porous layer with high porosity on Si substrate can remarkably reduce cracks and improve crystal quality of the epitaxial GaN layer, while a shallow porous layer with low porosity causes vertical cracks across from the Si substrate to GaN layer. The porous substrate is beneficial to release the stress caused by their thermal mismatch.

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2016 5th International Symposium on Next-Generation Electronics (ISNE)

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