通过改变插入电压和电解质成分来减少电化学脱落石墨烯缺陷

2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI:10.1109/ISNE.2016.7543319

Yi-Tsung Chang, Ching-Tsang Chang, Guan-Sian Li, T. Horng

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引用次数: 1

摘要

在电化学剥离石墨烯的实验中，改变插入电压1~3V，改变2.4g硫酸、0 ~5 mL 30% KOH和100 mL去离子水的电解质组成，找出它们与石墨烯缺陷的关系。拉曼光谱分析表明，使用较低的插入电压和1:2的OH-: H+比可以减少缺陷的数量。其缺陷率ID/IG为0.5。

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Reducing electrochemical exfoliated graphene defects by changing the insert voltage and electrolyte composition

In the experiments of electrochemical exfoliated graphene, the insert voltage1~3V and electrolyte composition of 2.4g sulfuric acid, 0 ~5 mL of 30% KOH and 100 mL of deionized water should were changed to find their relationship with graphene defects. Analysis of Raman spectra illustrated that using a lower insert voltage and a OH-: H+ ratio for the electrolyte of 1:2 reduced the number of defects. Its defect ratio ID/IG was 0.5.

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2016 5th International Symposium on Next-Generation Electronics (ISNE)

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