{"title":"OSNR sensitivity of multi-level modulation formats","authors":"M. Eiselt, A. Dochhan, W. Rosenkranz","doi":"10.1117/12.888416","DOIUrl":"https://doi.org/10.1117/12.888416","url":null,"abstract":"A simple analytical method to estimate the OSNR sensitivity of multi-level amplitude, phase and combined modulation formats is shown. Results are verified by numerical simulations.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"395 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120892143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Qiang Li, Shanshan Wang, Yiting Chen, M. Yan, L. Tong, M. Qiu
{"title":"Silver nanowire based plasmon propagation, coupling and splitting at 1.55 µm wavelength","authors":"Qiang Li, Shanshan Wang, Yiting Chen, M. Yan, L. Tong, M. Qiu","doi":"10.1117/12.888265","DOIUrl":"https://doi.org/10.1117/12.888265","url":null,"abstract":"We experimentally demonstrate silver nanowire based plasmonic devices at optical communication wavelength 1.55 µm. The plasmon propagation loss in a 300 nm diameter silver nanowire is measured to be 0.3 dB/µm. Two types of plasmonic functional devices based on the coupling between two silver nanowires, nano-couplers and nano-splitters, are realized.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115273666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A SOA-based high Q microwave photonic filter","authors":"E. Xu, Lipei Li, Fei Wang, Yu Yu, Xiang Li, Xinliang Zhang, Dexiu Huang","doi":"10.1117/12.888333","DOIUrl":"https://doi.org/10.1117/12.888333","url":null,"abstract":"A high Q microwave photonic filter is proposed and experimentally demonstrated. It is based on a recirculating delay line comprising a semiconductor optical amplifier used to generate negative tap. A frequency response with a high Q of 543, a rejection ratio of 40 dB and good shape factor is obtained.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"376 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115971535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Advances of AlGaN-based high-efficiency deep-UV LEDs","authors":"H. Hirayama","doi":"10.1117/12.888927","DOIUrl":"https://doi.org/10.1117/12.888927","url":null,"abstract":"We demonstrated AlGaN-based multi-quantum-well (MQW) deep-ultraviolet (UV) light-emitting diodes (LEDs) with wavelengths in the range of 222–351 nm, fabricated on low threading dislocation density (TDD) AlN template on sapphire. A high internal quantum efficiency (IQE) of 50–80% was achieved from AlGaN or quaternary InAlGaN MQWs by fabricating them on low TDD AlN templates. Also, an electron injection efficiency (EIE) was markedly improved by using multi-quantum barrier (MQB). Over 20 mW cw output power was obtained for 256–275 nm LEDs, which will be useful for sterilization applications. The maximum external quantum efficiencies (EQEs) were 1.8 and 2.75% for 247 and 270 nm AlGaN-LEDs, respectively.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128614114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Is it viable to encompass physical impairment within GMPLS control plane of optical networks?","authors":"P. Castoldi","doi":"10.1117/12.888662","DOIUrl":"https://doi.org/10.1117/12.888662","url":null,"abstract":"Current implementations of GMPLS protocol suite are unaware of optical signal physical impairments and quality of transmission. In this paper, we present an overview of different approaches for implementing QoT estimation and QoT measurements in transparent networks and for encompassing sparse regeneration information in translucent networks.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131400421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The theoretical and numerical models of the novel and fast tunable semiconductor ring laser","authors":"Jiangbo Zhu, Junwen Zhang, N. Chi, Siyuan Yu","doi":"10.1117/12.888627","DOIUrl":"https://doi.org/10.1117/12.888627","url":null,"abstract":"We derived the multimode rate equations corresponding to the practical tunable semiconductor ring laser. We did MatLab simulation to research the process of mode competition and wavelength switching in the laser. A SMSR exceeding 30 dB was measured. Finally some discussion of the influence of several key parameters was given.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126917263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dual-wavelength DFB fiber laser based on equivalent phase shift and double exposure method","authors":"L. Jia, Liang Zhang, Z. Yin, Xiangfei Chen","doi":"10.1117/12.888033","DOIUrl":"https://doi.org/10.1117/12.888033","url":null,"abstract":"Based on the double exposure technology, a novel dual-wavelength distributed feedback (DFB) fiber laser with a wavelength spacing of 400pm is proposed and experimentally demonstrated. By employing an equivalent phase shift, only a submicrometer-level precision is required in the fabrication for realizing precise phase control.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114552013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Gigahertz quantum cryptography","authors":"G. Buller, R. Collins, P. J. Clarke, P. Townsend","doi":"10.1117/12.888242","DOIUrl":"https://doi.org/10.1117/12.888242","url":null,"abstract":"This paper describes progress in gigahertz-clocked quantum key distribution systems. It details current advances in both point-to-point and network applications. We will discuss possibilities for practical quantum key distribution using single-photon sources, and describe a robust gigahertz quantum cryptography system.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114761185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Muguang Wang, N. Jia, K. Zhong, Tang-jun Li, Jianfeng Chi, Ming Chen, Tao-rong Gong, D. Lu, S. Jian
{"title":"160 Gb/s OTDM demultiplexing based on two cascaded electro-absorption sampling windows","authors":"Muguang Wang, N. Jia, K. Zhong, Tang-jun Li, Jianfeng Chi, Ming Chen, Tao-rong Gong, D. Lu, S. Jian","doi":"10.1117/12.888405","DOIUrl":"https://doi.org/10.1117/12.888405","url":null,"abstract":"One 160 Gb/s optical time division demultiplexer based on two cascaded electro-absorption modulators as sampling windows was demonstrated and experimentally studied in detail. The two stages were used for the 160 Gb/s into 40 Gb/s demultiplexing and 40 Gb/s into 10 Gb/s demultiplexing respectively.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"357 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115941653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED","authors":"Bo-Han Lai, Chih-Hsien Cheng, Gong-Ru Lin","doi":"10.1117/12.889947","DOIUrl":"https://doi.org/10.1117/12.889947","url":null,"abstract":"The SiO<inf>x</inf> thickness affects the Si -QDs based MOSLED. The EL wavelength redshifts from 430 nm to 510 nm when the SiO<inf>x</inf> thickness increasing from 125 nm to 385 nm. The Si-QDs based MOSLED with the SiO<inf>x</inf> thickness of 385 nm has the maximum EL power of 469 nW.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116821603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}