{"title":"SiOx层厚度变化对硅量子点MOSLED的影响","authors":"Bo-Han Lai, Chih-Hsien Cheng, Gong-Ru Lin","doi":"10.1117/12.889947","DOIUrl":null,"url":null,"abstract":"The SiO<inf>x</inf> thickness affects the Si -QDs based MOSLED. The EL wavelength redshifts from 430 nm to 510 nm when the SiO<inf>x</inf> thickness increasing from 125 nm to 385 nm. The Si-QDs based MOSLED with the SiO<inf>x</inf> thickness of 385 nm has the maximum EL power of 469 nW.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED\",\"authors\":\"Bo-Han Lai, Chih-Hsien Cheng, Gong-Ru Lin\",\"doi\":\"10.1117/12.889947\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The SiO<inf>x</inf> thickness affects the Si -QDs based MOSLED. The EL wavelength redshifts from 430 nm to 510 nm when the SiO<inf>x</inf> thickness increasing from 125 nm to 385 nm. The Si-QDs based MOSLED with the SiO<inf>x</inf> thickness of 385 nm has the maximum EL power of 469 nW.\",\"PeriodicalId\":126232,\"journal\":{\"name\":\"Asia Communications and Photonics Conference and Exhibition\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Asia Communications and Photonics Conference and Exhibition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.889947\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Asia Communications and Photonics Conference and Exhibition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.889947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED
The SiOx thickness affects the Si -QDs based MOSLED. The EL wavelength redshifts from 430 nm to 510 nm when the SiOx thickness increasing from 125 nm to 385 nm. The Si-QDs based MOSLED with the SiOx thickness of 385 nm has the maximum EL power of 469 nW.
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