Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED

Abstract

The SiOx thickness affects the Si -QDs based MOSLED. The EL wavelength redshifts from 430 nm to 510 nm when the SiOx thickness increasing from 125 nm to 385 nm. The Si-QDs based MOSLED with the SiOx thickness of 385 nm has the maximum EL power of 469 nW.