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1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings最新文献

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Effect of the free carrier concentration on the escape time of excitons in quantum devices 自由载流子浓度对量子器件中激子逃逸时间的影响
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621156
H. Cruz, A. Hernández-Cabrera, P. Aceituno
{"title":"Effect of the free carrier concentration on the escape time of excitons in quantum devices","authors":"H. Cruz, A. Hernández-Cabrera, P. Aceituno","doi":"10.1109/WOFE.1997.621156","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621156","url":null,"abstract":"We have studied the effect of the electronic many-body interaction and of an external field on the tunneling escape rate in double barrier devices. Lifetimes of photoexcited excitons in quantum wells have been obtained at different carrier sheet densities by solving self-consistently the time dependent Schrodinger and Poisson equations. Results showed that the excitonic escape time is strongly affected by the area free carrier density in the quantum well.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115070731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design, fabrication and characterization of GaN-based HFET's 氮化镓基HFET的设计、制造与表征
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621132
L. Eastman, K. Chu, J. Burm, W. Schaff, M. Murphy, N. Weimann
{"title":"Design, fabrication and characterization of GaN-based HFET's","authors":"L. Eastman, K. Chu, J. Burm, W. Schaff, M. Murphy, N. Weimann","doi":"10.1109/WOFE.1997.621132","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621132","url":null,"abstract":"AlGaN-GaN modulation doped field effect transistors (MODFETs) with short gates show great promise for high power microwave amplifier applications. The lattice mismatch between Al/sub x/Ga/sub 1-x/N limits the thickness and/or the fraction of Al in the barrier. An upper limit of x=0.40 exists for 150 /spl Aring/ thick barriers for example, although lower x values and thicker barriers are commonly used. It is also possible to dope the channel, as well as the barrier. A simple analytical design model has been developed to show the tradeoff of 2DEG density with barrier composition and thickness, channel composition and thickness, and the location and sheet density of atomic planar doping.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132727078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Terahertz emission from direct created excitons in quantum wells 量子阱中直接产生激子的太赫兹辐射
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621158
A. Hernández-Cabrera, A. Ramos, H. Cruz, P. Aceituno
{"title":"Terahertz emission from direct created excitons in quantum wells","authors":"A. Hernández-Cabrera, A. Ramos, H. Cruz, P. Aceituno","doi":"10.1109/WOFE.1997.621158","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621158","url":null,"abstract":"We have studied the dipole electromagnetic radiation emerging from electrically pumped excitons tunneling between asymmetric double quantum wells, taking into account the two-particle nature of the process. Transition between direct and indirect excitons affects the charge oscillation of direct created excitons and therefore the terahertz emission. The frequency of this process is one order of magnitude higher than the photoexcited exciton emission.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115766500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
FET modeling for analog and digital applications 模拟和数字应用的场效应管建模
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621178
T. Fjeldly, T. Ytterdal, M. Shur
{"title":"FET modeling for analog and digital applications","authors":"T. Fjeldly, T. Ytterdal, M. Shur","doi":"10.1109/WOFE.1997.621178","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621178","url":null,"abstract":"We consider some recent developments in the modeling of submicrometer field effect transistor devices for use in design of analog and mixed mode applications. We emphasize the use of unified models with a precise and continuous description of the I-V and C-V characteristics in all regimes of operation, including the transition regions. The models incorporate short-channel and high-field effects, gate leakage current, and temperature dependencies of device parameters.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129228729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and characterization of two color GaAs based quantum well infrared detector structures 两色GaAs基量子阱红外探测器结构的设计与表征
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621150
J. Sánchez-Rojas, A. Guzmán, E. Muñoz, J.J. Sanchez, E. Calleja, A. Sanz-Hervás, C. Villar, M. Aguilar, M. Montojo, G. Vergara, L. J. Gomez
{"title":"Design and characterization of two color GaAs based quantum well infrared detector structures","authors":"J. Sánchez-Rojas, A. Guzmán, E. Muñoz, J.J. Sanchez, E. Calleja, A. Sanz-Hervás, C. Villar, M. Aguilar, M. Montojo, G. Vergara, L. J. Gomez","doi":"10.1109/WOFE.1997.621150","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621150","url":null,"abstract":"The choice of detector technology for infrared focal-plane arrays may be influenced by several factors as sensitivity, uniformity, array size, reproducibility, cost and integration possibilities. The material system GaAs/AlGaAs provides several advantages compared to the state-of-the-art II-VI semiconductor detectors, including the mature GaAs growth and processing technologies and the flexibility of energy band tailoring in QW's to operate at different atmospheric transmission windows. In this work we report the detailed design procedure of a tunable two-color photoconductive GaAs/AlAs/AlGaAs and GaAs/AlGaAs stacked Quantum Well Infrared Photodetector (QWIP). The structures are optimized to operate in the 3-5 /spl mu/m and 8-10 /spl mu/m windows, with peak detectivities at /spl sim/4 /spl mu/m and 9 /spl mu/m, respectively. A transfer-matrix method was used to estimate the subband energies of the structures according to the operating wavelength specifications. The effect of many-body corrections was also taken into account.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126218410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasma wave electronics: terahertz detectors and sources using two dimensional electronic fluid in high electron mobility transistors 等离子体波电子学:在高电子迁移率晶体管中使用二维电子流体的太赫兹探测器和源
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621164
M. Dyakonov, M. Shur
{"title":"Plasma wave electronics: terahertz detectors and sources using two dimensional electronic fluid in high electron mobility transistors","authors":"M. Dyakonov, M. Shur","doi":"10.1109/WOFE.1997.621164","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621164","url":null,"abstract":"We discuss applications of plasma waves in high electron mobility transistors for detectors and sources operating in millimeter and submillimeter range. A short channel high electron mobility transistor (HEMT) has a resonance response to electromagnetic radiation at the plasma oscillation frequencies of the two dimensional electrons in the device. The devices, which use this resonance response should operate at much higher frequencies than conventional, transit-time limited devices since the plasma waves propagate much faster than electrons. The responsivities of such devices may greatly exceed the responsivities of Schottky diodes currently used as detectors and mixers in the terahertz range. A long channel HEMT has a nonresonant response to electromagnetic radiation and can be used as a broad band detector for frequencies up to several tens of terahertz. Recently, a prototype nonresonant detector (operating in the microwave range) was fabricated using an AlGaAs/GaAs 0.15 micron gate HEMT. The measured dependencies of the detector responsivity on the gate bias and frequency are in good agreement with our theory.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122941941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Magneto-optics of arrays of quantum dots and antidots 量子点和反点阵列的磁光学
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621176
V. Gudmundsson, S. Erlingsson
{"title":"Magneto-optics of arrays of quantum dots and antidots","authors":"V. Gudmundsson, S. Erlingsson","doi":"10.1109/WOFE.1997.621176","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621176","url":null,"abstract":"We study the optical absorption of arrays of quantum dots and antidots in a perpendicular homogeneous magnetic field. The electronic system is described quantum mechanically using a Hartree approximation for the mutual Coulomb interaction of the electrons. The model is particularly suited for the investigation of the far-infrared absorption of gate-modulated systems, where the gate not only controls the distribution of the electrons, but also modulates the external radiation field.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116633517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heterojunction BiFET technology for high speed electronic systems 用于高速电子系统的异质结BiFET技术
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621135
M. Chang
{"title":"Heterojunction BiFET technology for high speed electronic systems","authors":"M. Chang","doi":"10.1109/WOFE.1997.621135","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621135","url":null,"abstract":"A GaAs BiFET LSI technology has been successfully developed for high speed, low power and mixed signal circuit applications. The direct placement of the FET on the HBT emitter cap layer simplifies the device epitaxial growth and process integration. High integration levels and functional circuit yield have been achieved. Excellent HBT and FET characteristics have bean produced, with the noise figure of the FETs comparable to those of traditional MESFETs, enabling them to perform well in front end receiver applications. Through this technology, several LSI circuits, including a 2 Gsps 2-bit prototype DRFM, 2 GHz 32/spl times/2 bit shift registers, sample and hold circuits with 9-bit resolution at 200 Msps and SRAMs with ultra-fast access time (330 ps) have been successfully demonstrated.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129565675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High temperature operation of narrow channel AlInAs/InGaAs/AlInAs 3D-SMODFETs for power amplifiers 用于功率放大器的窄通道AlInAs/InGaAs/AlInAs 3d - smodfet的高温工作
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621166
G. Martin, B. Pereiaslavets, L. Eastman, M.S. Seaford
{"title":"High temperature operation of narrow channel AlInAs/InGaAs/AlInAs 3D-SMODFETs for power amplifiers","authors":"G. Martin, B. Pereiaslavets, L. Eastman, M.S. Seaford","doi":"10.1109/WOFE.1997.621166","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621166","url":null,"abstract":"Using a modulation doped field effect transistor (MODFET) with a pseudomorphic parabolically graded channel and atomic planar doped pseudomorphic barriers on both sides of the channel, it is possible to achieve record-breaking electron sheet densities in the channel without having carriers in the barrier (Double-Doped Double-Strained MODFET, 3D-SMODFET). Designing double-doped MODFETs with stress compensation allows the total thickness of all the pseudomorphic layers to be extended beyond any one critical layer thickness value. Using a simple analytical method, an optimum material structure for AlInAs/InGaAs/AlInAs 3D-SMODFETs with narrow full channels is shown. These narrow channel 3D-SMODFETs on InP show minimal short channel effects (output conductance <15 mS/mm) at elevated temperatures with good pinch-off characteristics and RF performance (f/sub MAX/ to f/sub T/ ratio of 3).","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"50 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114028654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Appendix A Attendance List Of The Wofe Meeting 附录A股东大会出席名单
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1900-01-01 DOI: 10.1109/wofe.1997.621187
Pilar Aceituno
{"title":"Appendix A Attendance List Of The Wofe Meeting","authors":"Pilar Aceituno","doi":"10.1109/wofe.1997.621187","DOIUrl":"https://doi.org/10.1109/wofe.1997.621187","url":null,"abstract":"","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"74 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121133047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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