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1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings最新文献

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Multiple-valued logic circuits using resonant tunneling diodes 使用共振隧道二极管的多值逻辑电路
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621174
P. Mazumder
{"title":"Multiple-valued logic circuits using resonant tunneling diodes","authors":"P. Mazumder","doi":"10.1109/WOFE.1997.621174","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621174","url":null,"abstract":"The intent of this poster demonstration is to explain how resonant tunneling diodes (RTDs) can be utilized to design multiple-valued logic (MVL) circuits in a very compact and efficient manner, where the non-linear fold-back characteristic of RTDs provides unique advantages in the realization of specific functions that are central to the design of MVL circuits. At the University of Michigan, a comprehensive effort is being made to demonstrate through simulation, validation and fabrication that RTDs and associated tunneling devices such as BSRTTs, RHETs, RTBTs, etc. can be employed to realize ultra-high-speed and ultra-high-density digital circuits. Here, we show four different types of multi-valued logic circuits consisting of RTDs in conjunction with HBT and CMOS devices: multivalued gate arrays, multivalued 4-step counter, multivalued multiplexer, and multivalued signed-digit adder. These designs have been simulated using NDR-SPICE, a circuit simulator that has been developed at the University of Michigan to handle quantum electronic devices, and their at-speed performance has been accurately estimated by using a suite of CAD tools, also developed at the University of Michigan. The circuits have been built at the bread-board level by using discrete components, and their functionalities were verified. We have then transferred the technical knowhow to Lockheed Martin for monolithic fabrication of the first three MVL circuits.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"218 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115503607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Silicon nanoelectronics: prospects and promises 硅纳米电子学:前景与承诺
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621172
T. C. Mcgill, H.R. Levy, E. Daniel, P. Pettersson, P. Bridger, E. Piquette, J. Jones, O. Marsh
{"title":"Silicon nanoelectronics: prospects and promises","authors":"T. C. Mcgill, H.R. Levy, E. Daniel, P. Pettersson, P. Bridger, E. Piquette, J. Jones, O. Marsh","doi":"10.1109/WOFE.1997.621172","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621172","url":null,"abstract":"It is widely recognized that the holy grail for nanoelectronics is a technology that is compatible with standard silicon. We review the current prospects for the development of such a technology. We will discuss the current prospects for Si based heterojunctions including SiGeC, CaF/sub 2/, CeO/sub 2/, SiO/sub 2/ and ZnS to name just a few. Further, we review the status of one device structures, the tunnel switched diode, which can currently be deployed in a number of applications.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121243888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Infrared imaging arrays using advanced III-V materials and technology 红外成像阵列采用先进的III-V材料和技术
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621147
M. Razeghi, J.D. Kim, C. Jelen, S. Slivken, E. Michel, H. Mohseini, J.J. Lee, J. Wojkowski, K. Kim, H. Jeon, J. Xu
{"title":"Infrared imaging arrays using advanced III-V materials and technology","authors":"M. Razeghi, J.D. Kim, C. Jelen, S. Slivken, E. Michel, H. Mohseini, J.J. Lee, J. Wojkowski, K. Kim, H. Jeon, J. Xu","doi":"10.1109/WOFE.1997.621147","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621147","url":null,"abstract":"Photodetectors operating in the 3-5 and 8-12 /spl mu/m atmospheric windows are of great importance for applications in infrared (IR) thermal imaging. HgCdTe has been the dominant material system for these applications. However, it suffers from instability and non-uniformity problems over large areas due to high Hg vapor pressure during the material, growth. There has been a lot of interest in the use of heteroepitaxially grown Sb-based alloys, its strained layer superlattices, and GaAs based quantum wells as alternatives to MCT. This interest has been driven by the advanced material growth and processing technology available for the III-V material system.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128156029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultrafast circuits and systems using quantum devices 使用量子器件的超快电路和系统
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621183
P. Mazumder
{"title":"Ultrafast circuits and systems using quantum devices","authors":"P. Mazumder","doi":"10.1109/WOFE.1997.621183","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621183","url":null,"abstract":"In this paper, we discuss circuit design methodologies and simulation techniques for ultrafast digital systems using resonant tunneling devices. State of the art circuit techniques and process technologies are limited by the incremental performance improvement offered by device scaling. To achieve an order of magnitude improvement in circuit performance, it is necessary to develop technologies that are not solely dependent on device scaling for performance enhancement. Quantum effect devices use a radically different tunneling transport mechanism which allows picosecond device switching speeds and hence quantum circuit technology is a promising emerging alternative VLSI circuit technology. In a concentrated effort in the area of ultrafast circuit design using resonant tunneling devices, at the University of Michigan, we have developed circuit theory, logic families, architectural techniques, and CAD tools for the design of high performance circuit systems using quantum effect resonant tunneling diodes (RTDs) in conjunction with hetero-junction bipolar transistors (HBTs), high electron mobility transistors (HEMTs) and CMOS devices.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127854030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Study of semiconductor devices from ab initio theory 从从头算理论研究半导体器件
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621185
M. González-Díaz, P. Rodríguez‐Hernández, A. Muñoz
{"title":"Study of semiconductor devices from ab initio theory","authors":"M. González-Díaz, P. Rodríguez‐Hernández, A. Muñoz","doi":"10.1109/WOFE.1997.621185","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621185","url":null,"abstract":"","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115467183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heterodimensional MESFETs for ultra low power electronics 超低功耗电子器件的异质尺寸mesfet
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621179
T. Ytterdal, M. Shur, W. Peatman, M. Hurt
{"title":"Heterodimensional MESFETs for ultra low power electronics","authors":"T. Ytterdal, M. Shur, W. Peatman, M. Hurt","doi":"10.1109/WOFE.1997.621179","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621179","url":null,"abstract":"Revolutionary change in electronics technology will be required to meet the pressing need to dramatically reduce the power consumption of large scale integrated circuits in future low power applications such as wireless communications and other portable electronics. Our approach for realizing such change is to utilize novel two-dimensional metal-semiconductor field effect transistors (2-D MESFETs), which not only can be scaled to deep sub-micron dimensions without suffering severe narrow channel and short channel effects, but also offer new ways to implement basic logic functions using far fewer transistors than are currently required. In addition to lower power consumption and greater functionality, these new architectures should dramatically simplify the design process and allow much denser packing. In this paper we present the heterodimensional technology in general and in particular the 2D MESFET which is one of the devices based on this technology. Furthermore, we explore the advantages of utilizing this device in an integrated circuit environment.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"17 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125764250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of high /spl epsiv/ paramagnetic and ferroelectric materials to high-transconductance HFETs with low noise and low gate current [InGaAs-AlGaAs devices] 高/压级/顺磁性和铁电材料在低噪声、低栅极电流高跨导hfet中的应用[InGaAs-AlGaAs器件]
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621139
P. Handel, R. Zuleeg
{"title":"Application of high /spl epsiv/ paramagnetic and ferroelectric materials to high-transconductance HFETs with low noise and low gate current [InGaAs-AlGaAs devices]","authors":"P. Handel, R. Zuleeg","doi":"10.1109/WOFE.1997.621139","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621139","url":null,"abstract":"Paraelectric or hysteresis-free ferroelectric gate insulation is ideal for special HFETs meeting bandwidth requirements from 0 to 100 GHz. It allows total suppression of gate leakage currents, while also assuring a large increase in the transconductance of the device at frequencies under 100 MHz, where the permittivity is still high. The gradual decrease of /spl epsiv/ in the UHF region is actually very useful, since it limits the free fall of the input impedance of the device to zero, which would load the source excessively. Finally, the lower temperature BaMgF/sub 4/ technology avoids oxidation and degradation of the compound semiconductors, and a further improvement in /spl epsiv/ through mobile ferroelectric micro-domains is possible by optimizing the growth conditions.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125968750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Hot electrons in quantum cascade lasers 量子级联激光器中的热电子
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621140
S. Luryi
{"title":"Hot electrons in quantum cascade lasers","authors":"S. Luryi","doi":"10.1109/WOFE.1997.621140","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621140","url":null,"abstract":"We have developed a theory describing the operation of lasers based on intersubband transitions in a quantum well. The theory combines a first-principles description of the intersubband lineshape and the optical gain with kinetic models for carrier heating. The theory is consistent with the experimental data available and suggests new ways of improving the laser design for room temperature operation with high output power. At low carrier concentrations, it is possible to achieve positive values of the gain at room temperature even in the absence of an overall population inversion between quantum well subbands. For higher (but still moderate) concentrations, the theory predicts a peculiar dependence of the output wavelength on the pump current, including a regime where the lasing wavelength switches \"digitally\" between two stable values.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127888636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Challenging issues of quantum devices 量子器件的挑战性问题
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621134
D. Lippens
{"title":"Challenging issues of quantum devices","authors":"D. Lippens","doi":"10.1109/WOFE.1997.621134","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621134","url":null,"abstract":"Quantum effects concern carrier localization, tunneling and interference effects. They give rise to remarkable conduction properties notably negative differential conductance, special symmetry and directivity. In this paper, two classes of structures are more specially addressed involving either a lateral or a vertical transport in semiconductor heterojunctions. For the electron waveguides representative of a lateral transport, the author focuses on the necessary conditions for a high directivity in multi-port devices by means of interference patterns or symmetry breaking. For the second kind of structure, special attention is paid to resonant tunneling structures in a two-terminal configuration. Beyond the search for an efficient control of resonant tunneling currents, the author reports on figures of merit, notably for ultra-fast analog applications.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130352435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring the lateral degree of freedom semiconductor lasers 探索半导体激光器的横向自由度
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI: 10.1109/WOFE.1997.621142
J. Xu
{"title":"Exploring the lateral degree of freedom semiconductor lasers","authors":"J. Xu","doi":"10.1109/WOFE.1997.621142","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621142","url":null,"abstract":"Ease of integration is only one of the great potential of the lateral injection lasers which results from the release of an additional degree of freedom. For example, the use of non-conducting cladding layers enables capacitive modulation and gain and/or wavelength tuning from a top electrode. Post-fabrication processing via deposition and modification of dielectric on a base structure allows us to add and extract different functionalities, which too is enabled by the absence of vertical injection through the layers. The use of the lateral degree of freedom reduces or removes the need for compromises between the electrical and optical design considerations which exist in the vertical paradigm. One benefit of this decoupling between the electrical and optical designs is that large bandgap undoped materials can be used in cladding and barrier layers to enhance both optical and electrical confinements without inducing extra resistance, heat and carrier non-uniformity and with reduced chirping.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"244 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132709446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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