T. C. Mcgill, H.R. Levy, E. Daniel, P. Pettersson, P. Bridger, E. Piquette, J. Jones, O. Marsh
{"title":"硅纳米电子学:前景与承诺","authors":"T. C. Mcgill, H.R. Levy, E. Daniel, P. Pettersson, P. Bridger, E. Piquette, J. Jones, O. Marsh","doi":"10.1109/WOFE.1997.621172","DOIUrl":null,"url":null,"abstract":"It is widely recognized that the holy grail for nanoelectronics is a technology that is compatible with standard silicon. We review the current prospects for the development of such a technology. We will discuss the current prospects for Si based heterojunctions including SiGeC, CaF/sub 2/, CeO/sub 2/, SiO/sub 2/ and ZnS to name just a few. Further, we review the status of one device structures, the tunnel switched diode, which can currently be deployed in a number of applications.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Silicon nanoelectronics: prospects and promises\",\"authors\":\"T. C. Mcgill, H.R. Levy, E. Daniel, P. Pettersson, P. Bridger, E. Piquette, J. Jones, O. Marsh\",\"doi\":\"10.1109/WOFE.1997.621172\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is widely recognized that the holy grail for nanoelectronics is a technology that is compatible with standard silicon. We review the current prospects for the development of such a technology. We will discuss the current prospects for Si based heterojunctions including SiGeC, CaF/sub 2/, CeO/sub 2/, SiO/sub 2/ and ZnS to name just a few. Further, we review the status of one device structures, the tunnel switched diode, which can currently be deployed in a number of applications.\",\"PeriodicalId\":119712,\"journal\":{\"name\":\"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-01-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOFE.1997.621172\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOFE.1997.621172","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
It is widely recognized that the holy grail for nanoelectronics is a technology that is compatible with standard silicon. We review the current prospects for the development of such a technology. We will discuss the current prospects for Si based heterojunctions including SiGeC, CaF/sub 2/, CeO/sub 2/, SiO/sub 2/ and ZnS to name just a few. Further, we review the status of one device structures, the tunnel switched diode, which can currently be deployed in a number of applications.
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