{"title":"自由载流子浓度对量子器件中激子逃逸时间的影响","authors":"H. Cruz, A. Hernández-Cabrera, P. Aceituno","doi":"10.1109/WOFE.1997.621156","DOIUrl":null,"url":null,"abstract":"We have studied the effect of the electronic many-body interaction and of an external field on the tunneling escape rate in double barrier devices. Lifetimes of photoexcited excitons in quantum wells have been obtained at different carrier sheet densities by solving self-consistently the time dependent Schrodinger and Poisson equations. Results showed that the excitonic escape time is strongly affected by the area free carrier density in the quantum well.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"183 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of the free carrier concentration on the escape time of excitons in quantum devices\",\"authors\":\"H. Cruz, A. Hernández-Cabrera, P. Aceituno\",\"doi\":\"10.1109/WOFE.1997.621156\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied the effect of the electronic many-body interaction and of an external field on the tunneling escape rate in double barrier devices. Lifetimes of photoexcited excitons in quantum wells have been obtained at different carrier sheet densities by solving self-consistently the time dependent Schrodinger and Poisson equations. Results showed that the excitonic escape time is strongly affected by the area free carrier density in the quantum well.\",\"PeriodicalId\":119712,\"journal\":{\"name\":\"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings\",\"volume\":\"183 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-01-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOFE.1997.621156\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOFE.1997.621156","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of the free carrier concentration on the escape time of excitons in quantum devices
We have studied the effect of the electronic many-body interaction and of an external field on the tunneling escape rate in double barrier devices. Lifetimes of photoexcited excitons in quantum wells have been obtained at different carrier sheet densities by solving self-consistently the time dependent Schrodinger and Poisson equations. Results showed that the excitonic escape time is strongly affected by the area free carrier density in the quantum well.
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