2018 IEEE Applied Power Electronics Conference and Exposition (APEC)最新文献_第4页

High power density PCB coil array applied to domestic induction heating appliances 应用于家用感应加热器具的高功率密度PCB线圈阵列

2018 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2018-03-04 DOI: 10.1109/APEC.2018.8341394

J. Serrano, J. Acero, I. Lope, C. Carretero, J. Burdío

引用次数: 2

An improved active zero voltage switching assisting circuit with lower dv/dt for DC-DC series resonant converter with constant input current 一种改进型直流-直流串联谐振变换器低dv/dt有源零电压开关辅助电路

2018 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2018-03-04 DOI: 10.1109/APEC.2018.8341108

T. Saha, Hongjie Wang, B. Riar, R. Zane

{"title":"An improved active zero voltage switching assisting circuit with lower dv/dt for DC-DC series resonant converter with constant input current","authors":"T. Saha, Hongjie Wang, B. Riar, R. Zane","doi":"10.1109/APEC.2018.8341108","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341108","url":null,"abstract":"With a constant current dc power distribution system, the input voltage of each series connected power converter module varies with the load. Achieving zero voltage switching (ZVS) for the converter using passive techniques becomes a challenging and difficult task with the wide variation in the load that also changes the input voltage. Therefore, an active assisting method that adapts to the varying input voltage is needed for achieving ZVS with good efficiency over the load range. Traditional active ZVS assistance techniques either operates with higher rms currents in the main switches and the ZVS assisting branch, which further result in higher conduction losses, or result in hard switching of assisting switches, which result in high EMI due to high dv/dt, at full DC bus voltage. In this paper, an active ZVS assisting circuit is proposed which operates with low rms currents in the assisting branch with lower EMIs due to dv/dt in the assisting branch. The proposed technique is experimentally verified through testing of a series resonant converter whose input is connected to a 1 A current source and output current is regulated at 0.33 A for a full load of 250 W, operating at a switching frequency of 250 kHz.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122169520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

A 10 nW, 10 mV signal detector using a 2 pA standby voltage reference, for always-on sensors and receivers 10nw, 10mv信号检测器，使用2pa备用基准电压，用于始终开的传感器和接收器

2018 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2018-03-04 DOI: 10.1109/APEC.2018.8341147

S. Adami, Guang Yang, Chunhong Zhang, P. Proynov, B. Stark

{"title":"A 10 nW, 10 mV signal detector using a 2 pA standby voltage reference, for always-on sensors and receivers","authors":"S. Adami, Guang Yang, Chunhong Zhang, P. Proynov, B. Stark","doi":"10.1109/APEC.2018.8341147","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341147","url":null,"abstract":"An RF energy harvesting circuit is usually designed to maximise efficiency and therefore output power, while a passive wake-up radio is usually optimised for a high open-circuit output voltage resulting in high sensitivity. These two functions have conflicting design requirements, but are generally both needed in Internet-of-Things devices. This paper presents a new approach to holding almost the entire system fully powered down whilst listening, whilst also obtaining an effective wake-up and energy harvesting circuit using the same rectenna (rectifying antenna). The topology uses a rectenna that is optimised for efficiency, and two signal detector circuits that draw up to 3.5 nA from the battery. One detector is configured to trigger at 85 mV, to start up the boost converter when enough power is available to obtain netpositive energy harvesting. The other detector is set to be more sensitive, to wake up subsystems when the rectenna output reaches 10 mV. The detector architecture and transistor-level design are presented, and the detection threshold and power levels experimentally verified. The circuit draws 10 nW at a sensitivity of 10 mV, and 3.9 nW at 85 mV. This detection system is the first reported circuit with a configurable detection threshold that draws only nW from the battery, and that, in addition to RF signals, can be used with any transient signals, such as outputs from piezoelectric sensors, microphones, or energy harvesters that produce in excess of around 10 mV. The low power consumption of this circuit is largely due to use of the UB20M voltage detector, whose internal on-demand voltage reference generator is also reported here. It has the lowest reported standby current of 2 pA, and a sub-microsecond-scale turn-on response time.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128542124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Power management of a self-powered multi-parameter wireless sensor for IoT application 用于物联网应用的自供电多参数无线传感器的电源管理

2018 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2018-03-04 DOI: 10.1109/APEC.2018.8341197

Dingyi He, B. Fahimi

引用次数: 6

Optimization of ferrite core to reduce the core loss in double-D pad of wireless charging system for electric vehicles 优化铁氧体磁芯，降低电动汽车无线充电系统双d垫磁芯损耗

2018 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2018-03-04 DOI: 10.1109/APEC.2018.8341192

Mostak Mohammad, Seungdeog Choi

{"title":"Optimization of ferrite core to reduce the core loss in double-D pad of wireless charging system for electric vehicles","authors":"Mostak Mohammad, Seungdeog Choi","doi":"10.1109/APEC.2018.8341192","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341192","url":null,"abstract":"In this paper, an optimized core structure is proposed for the double-D (DD) power pad to reduce its core loss in a wireless charging system for Electric and Plug-in Hybrid Electric Vehicle (EV/PHEV) application. At around 85 kHz operating frequency, the core loss is found to be one of the most significant loss in typical wireless charging system of high power application. The core loss in power ferrite mainly depends on the operating frequency and magnetic field density in the core. The frequency is usaully fixed for certain appication, therefore, the magnetic field density in the core is be to optimized to reduce the loss. The magnetic field density in core of a double-D (DD) pad has very different pattern compared to unpolar pad; therefore traditional bar or plate core does not provide the optimum performance considering core loss. In this paper, an optimized core structure is proposed to make the flux density uniform in the core and minimize its loss. The proposed optimized model is simulated in finite element analysis (FEA), and compared with traditional flat type core. Finally, the proposed model is verified through a 3.2kW wireless Double-D (DD) type wireless charging pad.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124972668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 26

Miller plateau as an indicator of SiC MOSFET gate oxide degradation Miller平台作为SiC MOSFET栅极氧化物降解的指标

2018 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2018-03-04 DOI: 10.1109/APEC.2018.8341181

Ze Ni, Yanchao Li, X. Lyu, O. Yadav, Dong Cao

{"title":"Miller plateau as an indicator of SiC MOSFET gate oxide degradation","authors":"Ze Ni, Yanchao Li, X. Lyu, O. Yadav, Dong Cao","doi":"10.1109/APEC.2018.8341181","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341181","url":null,"abstract":"This paper presents a new indicator of SiC MOSFET gate oxide degradation based on Miller plateau. The physical mechanism of Miller plateau shift with gate oxide electric field is first analyzed. The relationship between Miller plateau and ambient temperature is then explored by theoretical analysis. The electro-thermal simulation is conducted in LTSpice to verify the Miller plateau shift with ambient temperature. Besides, 20 groups of High Electric Field (HEF) acceleration tests are conducted with Vgs stress amplitude of 25 V, 30V, 35V, 40V and stress duration of 10, 40, 70, 85, 100 hours. 5 SCT2120AF SiC MOSEFTs from Rohm are stressed in each group. After ageing tests, the stressed devices are used to verify dynamic characteristic change in the designed double pulse test platform. After 100-hour HEF tests with 40V Vgs stress, Miller plateau shift can reach up to 1.5V. Finally, comparison is made among Miller plateau, threshold voltage and gate resistor turn-on energy. Analysis shows that Miller plateau can be used as an indicator of SiC MOSFET gate oxide degradation with detectable amplitude shift as well as inherent gate driver integration and online monitoring characteristics.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129693074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 25

A new gate drive technique for superjunction MOSFETs to compensate the effects of common source inductance 一种补偿共源电感影响的超结mosfet栅极驱动新技术

2018 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2018-03-04 DOI: 10.1109/APEC.2018.8341408

B. Zojer

引用次数: 8

Modeling the gate driver IC for GaN transistor: A black-box approach GaN晶体管栅极驱动IC的建模:黑盒方法

2018 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2018-03-04 DOI: 10.1109/APEC.2018.8341429

Ruiliang Xie, G. Xu, Xu Yang, Gaofei Tang, Jin Wei, Yidong Tian, Feng Zhang, Wenjie Chen, Laili Wang, K. J. Chen

{"title":"Modeling the gate driver IC for GaN transistor: A black-box approach","authors":"Ruiliang Xie, G. Xu, Xu Yang, Gaofei Tang, Jin Wei, Yidong Tian, Feng Zhang, Wenjie Chen, Laili Wang, K. J. Chen","doi":"10.1109/APEC.2018.8341429","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341429","url":null,"abstract":"During the switching performance evaluation for Si-based power devices, the gate driver IC's are commonly neglected because of Si device's slow switching speed. GaN transistors, with much smaller intrinsic capacitances, would enable faster switching speed and higher switching frequency. Consequently, the gate driver would largely impact the switching performance as well as the dead-time of the GaN transistor. In previous works, however, the gate driver IC used to drive GaN transistor have been ignored in circuit simulation, leading to lower modeling accuracy. In consideration of the lack of gate driver IC's critical design parameters, along with less familiarity of power electronics engineer/researcher with the semiconductor technologies, the gate driver IC could be regarded as a “black-box”. Despite the difficulty in directly performing measurements inside the driver chip package, a black-box modeling method could be proposed. Based on the measured terminal current/voltage signals in a typical gate drive scheme, the I-V characteristics of the PMOS in the totem-pole topology could be extracted. With respect to the C-V curves, the characteristics of a discrete Si MOSFET with comparable voltage/current rating could be introduced. Taking into account the operating principle of the totem-pole topology, a circuit-level model could be established. Consequently, the simulated waveforms are in reasonable agreements with the testing results. Taking advantages of the proposed black-box modeling method, the switching transient waveforms as well as the dead-time of GaN transistor could be more accurately evaluated.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"360 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125646952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

A high frequency power factor correction converter with soft switching 带软开关的高频功率因数校正变换器

2018 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2018-03-04 DOI: 10.1109/APEC.2018.8341296

Alex J. Hanson, D. Perreault

引用次数: 23

Acoustic noise mitigation of switched reluctance machines with windows in both stator and rotor poles 在定子和转子极都有窗口的开关磁阻电机的噪声抑制

2018 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2018-03-04 DOI: 10.1109/APEC.2018.8341169

M. Elamin, Y. Yaşa, Omer Gundogmus, Y. Sozer, J. Kutz, Joshua Tylenda, Ronnie L. Wright

引用次数: 6