Day 1 Mon, March 21, 2022最新文献_第9页

Resonance Effects in the Raman Spectrum of CdGa2Se4 CdGa2Se4喇曼光谱中的共振效应

Day 1 Mon, March 21, 2022 Pub Date : 1986-03-01 DOI: 10.1002/PSSB.2221340110

A. Parisini, P. P. Lottici, C. Razzetti, R. Bacewicz

引用次数: 3

Capture of Majority Carriers by a Semiconductor Surface 半导体表面捕获多数载流子

Day 1 Mon, March 21, 2022 Pub Date : 1986-03-01 DOI: 10.1002/PSSB.2221340138

R. A. Vardanyan, L. B. Khovakimyan

引用次数: 1

Dislocation Core Models and Their Positron Annihilation Effects 位错核模型及其正电子湮没效应

Day 1 Mon, March 21, 2022 Pub Date : 1986-03-01 DOI: 10.1002/PSSB.2221340112

J. Shen, C. Lung, K. L. Wang

引用次数: 1

On the Influence of the Non-Locality of Exchange and Correlation on the Total Energy and on the Band Gap of Silicon 交换和相关的非局域性对总能量和硅带隙的影响

Day 1 Mon, March 21, 2022 Pub Date : 1986-03-01 DOI: 10.1002/PSSB.2221340164

H. Wiesner, W. Cordts, J. Monecke

引用次数: 1

AC Transport in Short n+nn+ Layers 短n+nn+层的交流传输

Day 1 Mon, March 21, 2022 Pub Date : 1986-03-01 DOI: 10.1002/PSSB.2221340149

J. Sinkkonen, S. Eränen

{"title":"AC Transport in Short n+nn+ Layers","authors":"J. Sinkkonen, S. Eränen","doi":"10.1002/PSSB.2221340149","DOIUrl":"https://doi.org/10.1002/PSSB.2221340149","url":null,"abstract":"The admittance of n+nn+ semiconductor structures is studied by solving self-consistently the Poisson equation, the continuity equation, and the linearized Boltzmann equation in the relaxation time approximation for a spatially inhomogeneous electron system. Exact numerical results and an approximate, analytical solution are presented. In addition to the normal bulk admittance and the geometric capacitance of the central n region, the equivalent circuit of the structure consists of contact contributions, the magnitude of which depends on the length of the n region L. At low frequencies the effect of the contacts is to induce a conductance Gc, and a capacitance Cc, in parallel with Gc, in the equivalent circuit. On the other hand, above the plasma frequency of the n region the contact admittance vanishes because of the shunting of the capacitive elements. \u0000 \u0000 \u0000 \u0000Die Admittanz von n+nn+-Halbleiterstrukturen wird durch selbstkonsistentes Losen der Poisson- gleichung, der Kontinuitatsgleichung und der linearisierten Boltzmanngleichung in der Relaxationszeitnaherung fur ein raumlich inhomogenes Elektronensystem untersucht. Exakte numerische Ergebnisse und eine analytische Naherungslosung werden angegeben. Zusatzlich zur normalen Volumenadmittanz und der geometrischen Kapazitanz des zentralen n-Bereichs, besteht das Ersatzschaltbild aus Kontaktbeitragen, deren Grose von der Lange L des n-Bereichs abhangt. Bei niedrigen Frequenzen besteht der Einflus der Kontakte in der Induzierung eines Leitwerts Ge, und einer Kapazitanz Ce, parallel zu Ge, im Ersatzschaltbild. Andererseits verschwindet die Kontaktadmittanz oberhalb der Plasmafrequenz des n-Bereichs aufgrund der Uberbruckung der kapazitiven Elemente.","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90153024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Lattice Anharmonicity and Thermal Expansion of Alkali Metals 碱金属晶格非调和性与热膨胀

Day 1 Mon, March 21, 2022 Pub Date : 1986-03-01 DOI: 10.1002/PSSB.2221340151

T. Soma, H. Kagaya

引用次数: 0

Asymmetry of the EPR Absorption Line in CdF2 with Y CdF2中EPR吸收谱线与Y的不对称性

Day 1 Mon, March 21, 2022 Pub Date : 1986-03-01 DOI: 10.1002/PSSB.2221340137

Z. Wilamowski, B. Oczkiewicz, P. Kacman, J. Blinowski

引用次数: 7

A Modified Bruggeman Theory of Optical Properties for Metal-Isolator Transitions 金属-隔离跃迁光学性质的修正Bruggeman理论

Day 1 Mon, March 21, 2022 Pub Date : 1986-03-01 DOI: 10.1002/PSSB.2221340159

M. Arnold, P. Bussemer

引用次数: 1

Renormalization Group Free Energy for an Ising Ferromagnet on a Simple Cubic Lattice 简单立方晶格上Ising铁磁体的重整化群自由能

Day 1 Mon, March 21, 2022 Pub Date : 1986-03-01 DOI: 10.1002/PSSB.2221340156

W. Reich, H. Cofta

引用次数: 3

Bond Charges and Electronic Charge Transfer in Ternary Semiconductors 三元半导体中的键电荷和电子电荷转移

Day 1 Mon, March 21, 2022 Pub Date : 1986-03-01 DOI: 10.1002/PSSB.2221340104

U. Pietsch

{"title":"Bond Charges and Electronic Charge Transfer in Ternary Semiconductors","authors":"U. Pietsch","doi":"10.1002/PSSB.2221340104","DOIUrl":"https://doi.org/10.1002/PSSB.2221340104","url":null,"abstract":"By means of a simple molecule-theoretic model of “linear superposition of two-electron molecules” the bond charges between nearest neighbours and the effective charges of ions are calculated for ternary zinc-blende structure alloys as well as chalcopyrite semiconductors. Taking into account both, the charge transfer among the ions caused by the differences of electronegativities of atoms used and between the bonds created by the internal stress of the lattice a nearly unvaried averaged bond charge amount of the alloy is found, but rather dramatically changed local bond charge parameters in comparison with the respective values of binary compounds used. This fact should influence the noncentral force interaction in such semiconductors. \u0000 \u0000 \u0000 \u0000Mittels eines einfachen molekultheoretischen Modells der linearen Superposition von Zweielektronenmolekulen werden die Bindungsladungen zwischen nachsten Nachbarn und die effektiven Ladungen der Ionen fur ternare Festkorperlosungen mit Zinkblendestruktur und fur Chalkopyrit-Halbleiter berechnet. Der Ladungstransfer unter den lonen wird berucksichtigt, der durch die Differenz der atomaren Elektronegativitaten verursacht wird, und zwischen den Bindungen, der sich aus dem inneren Streszustand des Gitters erklart. Im Vergleich zu den Werten der entsprechenden binaren Verbindungen wird ein nahezu unveranderter mittlerer Bindungsladungsbetrag gefunden. Diese Tatsache sollte Einflus auf die Nichtzentralkraftwechselwirkung in solchen Halbleitern haben.","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"65 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88297310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1