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Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference最新文献

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Photoelectrochemical characterization of CuGaSe/sub 2/ and Cu(Ga,In)Se/sub 2/ films and defect chemical implications for solar cell performance CuGaSe/sub 2/和Cu(Ga,In)Se/sub 2/薄膜的光电化学表征及其对太阳能电池性能的影响
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105996
D. Cahen, A. Kisilev, V. Marcu, H. Schock, R. Noufi
{"title":"Photoelectrochemical characterization of CuGaSe/sub 2/ and Cu(Ga,In)Se/sub 2/ films and defect chemical implications for solar cell performance","authors":"D. Cahen, A. Kisilev, V. Marcu, H. Schock, R. Noufi","doi":"10.1109/PVSC.1988.105996","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105996","url":null,"abstract":"The effective electronic parameters and the optical bandgap of CuGaSe/sub 2/ and Cu(Ga,In)Se/sub 2/ films were determined by using an organic liquid electrolyte to form a Schottky barrier to the films. Trends in the electronic parameters, composition, and additional information were used in a defect chemical framework to explore the effects of Ga substitution/doping on CuInSe/sub 2/. Values for optical and (effective) electronic parameters for several CuGaSe/sub 2/ films are reported. Photocurrent-wavelength data are also shown. In CuGaSe/sub 2/ (as in CuInSe/sub 2/), film stoichiometry needs to be reasonably well controlled, close to Cu/Ga=1, according to the results.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"75 1","pages":"1437-1442 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81906768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electro-optical properties of Cd/sub 1-x/Zn/sub x/S films and fabrication of Cd/sub 1-x/Zn/sub x/S/InP heterojunctions Cd/sub - 1-x/Zn/sub x/S薄膜的电光特性及Cd/sub - 1-x/Zn/sub x/S/InP异质结的制备
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105991
A. Pal, A. Dhar, A. Mondal, R. Basak, S. Chaudhuri
{"title":"Electro-optical properties of Cd/sub 1-x/Zn/sub x/S films and fabrication of Cd/sub 1-x/Zn/sub x/S/InP heterojunctions","authors":"A. Pal, A. Dhar, A. Mondal, R. Basak, S. Chaudhuri","doi":"10.1109/PVSC.1988.105991","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105991","url":null,"abstract":"Cd/sub 1-x/Zn/sub x/S films (0<or=x<or=0.2) were characterized by electrical and optical measurements to obtain the optimum deposition condition for device fabrication on p-type single-crystal InP (Zn doped) with","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"1646-1649 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79519983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance of a 4 kW amorphous-silicon alloy photovoltaic array at Oakland Community College, Auburn Hills, Michigan 密歇根州奥本山奥克兰社区学院4kw非晶硅合金光伏阵列的性能
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105909
R. Pratt, J. Burdick
{"title":"Performance of a 4 kW amorphous-silicon alloy photovoltaic array at Oakland Community College, Auburn Hills, Michigan","authors":"R. Pratt, J. Burdick","doi":"10.1109/PVSC.1988.105909","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105909","url":null,"abstract":"Some key results from the first 16 months of operation of a 4 kW utility-interconnected photovoltaic array consisting of Sovonics R-100 tandem a-Si alloy photovoltaic modules are presented. A Campbell Scientific 21X micrologger was installed for recording DC and AC power, insolation, and temperature. Availability of the PV system is greater than 90%. The percentage of total hours in a month that the system is delivering AC power to the grid is 35.8%.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"61 1","pages":"1272-1277 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78543347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Alpha Solarco's high-concentration photovoltaic array development program Alpha Solarco的高浓度光伏阵列开发计划
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105882
D. Carroll
{"title":"Alpha Solarco's high-concentration photovoltaic array development program","authors":"D. Carroll","doi":"10.1109/PVSC.1988.105882","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105882","url":null,"abstract":"The design and planned production of a cost-effective, high-concentration point-focus Si array for utility-scale applications is discussed. Design considerations such as cell assemblies, optics, modules, and arrays are also discussed. The results indicate that the goals of high reliability, low maintenance, long system life, and an installed cost on the order of $2 per peak watt are achievable in the near term.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"41 1","pages":"1138-1143 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90941403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A new light trapping structure for very-thin, high-efficiency silicon solar cells 一种用于超薄高效硅太阳能电池的新型光捕获结构
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105813
T. Uematsu, M. Ida, K. Hane, Y. Hayashi, T. Saitoh
{"title":"A new light trapping structure for very-thin, high-efficiency silicon solar cells","authors":"T. Uematsu, M. Ida, K. Hane, Y. Hayashi, T. Saitoh","doi":"10.1109/PVSC.1988.105813","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105813","url":null,"abstract":"A novel cell structure with aligned V-grooves on each side is proposed to realize very thin silicon solar cells. The thickness can be less than 50 mu m without reduction of mechanical strength. This structure provides a very high light-trapping effect. The light-generated current in this structure is calculated as 40.58 mA/cm/sup 2/ under AM1.5 100 mW/cm/sup 2/ sunlight. This structure is expected to realize high efficiency, close to the limiting efficiency of around 29% and to yield fruitful results in concentrator cells.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"53 1","pages":"792-795 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90411872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Atomic imaging and microanalysis of photovoltaic semiconductor surfaces and interfaces 光电半导体表面和界面的原子成像和微分析
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105934
L. Kazmerski
{"title":"Atomic imaging and microanalysis of photovoltaic semiconductor surfaces and interfaces","authors":"L. Kazmerski","doi":"10.1109/PVSC.1988.105934","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105934","url":null,"abstract":"Techniques for chemical, compositional, and structural analysis of grain boundaries and other microfeatures in polycrystalline photovoltaic semiconductors are examined. These analyses cover the spatial resolution regime from several hundred microns to single atoms. Several conventional surface analysis methods used for chemical mapping are introduced for comparison of the limitations and interpretation of data, stressing the limits of spatial resolution. The emphasis is on techniques that provide structural, chemical, and bonding information on atomic dimensions. Specifically, spectroscopic scanning tunneling microscopy (STM) is discussed in terms of providing complementary diagnostic information. Comparative examples are given for the neutralization of shallow impurities at Si grain boundaries by hydrogen, and the incorporation of oxygen at surfaces and internal defects in CuInSe/sub 2/.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"1375-1383 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90801591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High altitude current-voltage measurement of GaAs/Ge solar cells GaAs/Ge太阳能电池的高空电流电压测量
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105805
R. E. Hart, D. Brinker, K. Emery
{"title":"High altitude current-voltage measurement of GaAs/Ge solar cells","authors":"R. E. Hart, D. Brinker, K. Emery","doi":"10.1109/PVSC.1988.105805","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105805","url":null,"abstract":"Measurements of high-voltage (V/sub oc/ of 1.2 V) gallium arsenide on germanium tandem junction solar cells at air mass 0.22 showed that the insolation in the red portion of the solar spectrum is insufficient to obtain high fill factor. On the basis of measurements in the LeRC X-25L solar simulator, these cells were believed to be as efficient as 21.68% AM0. Solar simulator spectrum errors in the red end allowed the fill factor to be as high as 78.7%. When a similar cell's current-voltage characteristic was measured at high altitude in the NASA Lear Jet Facility, a loss of 15 percentage points in fill factor was observed. This decrease was caused by insufficient current in the germanium bottom cell of the tandem stack.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"148 1","pages":"764-765 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80655296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
High-efficiency thin-film AlGaAs-GaAs double heterostructure solar cells 高效薄膜AlGaAs-GaAs双异质结构太阳能电池
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105741
R. Gale, R. McClelland, B. King, J. V. Gormley
{"title":"High-efficiency thin-film AlGaAs-GaAs double heterostructure solar cells","authors":"R. Gale, R. McClelland, B. King, J. V. Gormley","doi":"10.1109/PVSC.1988.105741","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105741","url":null,"abstract":"AlGaAs-GaAs double-heterostructure solar cells were fabricated in 10 mu m-thick films and exhibited one-sun, total-area conversion efficiencies up to 19.5% AM0, and 22.4% AM1.5. The cell structure consisted on an n-doped GaAs emitter and p-doped GaAs base interposed between AlGaAs layers. The cell structure was deposited by organometallic vapor-phase epitaxy on a GaAs CLEFT substrate, and later mechanically separated from the substrate during cell fabrication. A single-layer antireflection coating was used without a coverglass. The cells, fabricated on 2 in diameter wafers, had areas of either 1 or 4 cm/sup 2/. Reuse of the substrate was successfully demonstrated. For comparison, cells fabricated with a conventional process from double heterostructures deposited on bulk GaAs substrates exhibited one-sun AM1.5 efficiencies as high as 23.7%. The impact of these high efficiencies on space and terrestrial applications is discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"14 1","pages":"446-450 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78684919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
The odyssey of thin-film amorphous silicon photovoltaics 薄膜非晶硅光电的历程
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105653
E.S. Sabisky, J. Stone
{"title":"The odyssey of thin-film amorphous silicon photovoltaics","authors":"E.S. Sabisky, J. Stone","doi":"10.1109/PVSC.1988.105653","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105653","url":null,"abstract":"The authors review the successes of a-Si:H photovoltaics (PV) technology as well as the status of device efficiencies, markets, and commercialization. They propose technological goals for the years 1995 and 2000. These goals are, respectively: the demonstration of the commercial feasibility of PV-generated power by a selling price of 10-15 cents/kWh (1988 dollars); and a reduction of the selling price of PV-generated electricity to approximately half the 1995 price. An approach to achieving these goals is outlined.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"39-47 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77821885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Outdoor stability performance of single and tandem amorphous silicon modules 单非晶硅模块和串联非晶硅模块的室外稳定性
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105899
L. Mrig, S. Rummel, D. Waddington, R. Deblasio
{"title":"Outdoor stability performance of single and tandem amorphous silicon modules","authors":"L. Mrig, S. Rummel, D. Waddington, R. Deblasio","doi":"10.1109/PVSC.1988.105899","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105899","url":null,"abstract":"Stability performance test results are presented for tests conducted at SERI on single and tandem amorphous silicon solar cell modules and submodules made by various manufacturers. Two sets of commercially available first-generation single-junction amorphous silicon solar cell modules manufactured by two different manufacturers, one single-junction submodule fabricated under a SERI subcontract, and one tandem amorphous silicon research submodule fabricated by another SERI subcontractor are described. Based on the test data, the efficiency degradation for the two best first-generation single-junction amorphous silicon modules for the test period of three to four years is on the order of 20%.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"278 1","pages":"1221-1224 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77832767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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