CuGaSe/sub 2/和Cu(Ga,In)Se/sub 2/薄膜的光电化学表征及其对太阳能电池性能的影响

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI:10.1109/PVSC.1988.105996

D. Cahen, A. Kisilev, V. Marcu, H. Schock, R. Noufi

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引用次数: 1

摘要

利用有机液体电解质在CuGaSe/sub 2/和Cu(Ga,In)Se/sub 2/薄膜上形成肖特基势垒，测定了两种薄膜的有效电子参数和光带隙。利用电子参数、组成和附加信息的变化趋势，在缺陷化学框架中探讨了Ga取代/掺杂对CuInSe/ sub2 /的影响。报道了几种CuGaSe/ sub2 /薄膜的光学和(有效)电子参数值。还显示了光电流波长数据。根据结果，在CuGaSe/sub 2/(如CuInSe/sub 2/)中，薄膜化学计量需要得到合理的控制，接近Cu/Ga=1。

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Photoelectrochemical characterization of CuGaSe/sub 2/ and Cu(Ga,In)Se/sub 2/ films and defect chemical implications for solar cell performance

The effective electronic parameters and the optical bandgap of CuGaSe/sub 2/ and Cu(Ga,In)Se/sub 2/ films were determined by using an organic liquid electrolyte to form a Schottky barrier to the films. Trends in the electronic parameters, composition, and additional information were used in a defect chemical framework to explore the effects of Ga substitution/doping on CuInSe/sub 2/. Values for optical and (effective) electronic parameters for several CuGaSe/sub 2/ films are reported. Photocurrent-wavelength data are also shown. In CuGaSe/sub 2/ (as in CuInSe/sub 2/), film stoichiometry needs to be reasonably well controlled, close to Cu/Ga=1, according to the results.<>

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Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference

CiteScore

1.40

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0.00%

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