发布求助
文献互助 智能选刊 最新文献

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference最新文献

筛选
英文 中文
Thermally conductive alumina/organic composites for photovoltaic concentrator cell isolation 光伏聚光器电池隔离用导热氧化铝/有机复合材料
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105923
L.C. Beavis, J. Panitz, D. J. Sharp
{"title":"Thermally conductive alumina/organic composites for photovoltaic concentrator cell isolation","authors":"L.C. Beavis, J. Panitz, D. J. Sharp","doi":"10.1109/PVSC.1988.105923","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105923","url":null,"abstract":"Styrene-acrylate copolymer coatings were deposited onto anodized aluminum substrates and the processing characteristics correlated with coating properties. The aluminum (5005-H34) alloy trough or housing module was anodized in a chilled (0-5 degrees C) 18% aqueous sulfuric acid bath. The entire housing was anodized to 50 V at a current density of 1.4 A/dm/sup 2/. A styrene-acrylate copolymer electrophoretic bath was prepared, and the bottom of the inside of the module was electrocoated at 0.5 mA/cm/sup 2/ for 120 s. Breakdown measurements were obtained by placing a probe on the coating composite and gradually increasing the voltage until a current in excess of 10 mA occurred. The results indicate that thin, relatively high thermal conductivity, high-voltage breakdown dielectrics can be formed using this economical process.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"5 1","pages":"1338-1340 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75992719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Electron and proton radiation effects on GaAs and CuInSe/sub 2/ thin film solar cells 电子和质子辐射对GaAs和CuInSe/sub 2/薄膜太阳能电池的影响
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105835
R. Burgess, W.S. Chen, W. Devaney, D. H. Doyle, N. Kim, B. Stanbery
{"title":"Electron and proton radiation effects on GaAs and CuInSe/sub 2/ thin film solar cells","authors":"R. Burgess, W.S. Chen, W. Devaney, D. H. Doyle, N. Kim, B. Stanbery","doi":"10.1109/PVSC.1988.105835","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105835","url":null,"abstract":"The effects of proton and electron radiation on the performances of GaAs and CuInSe/sub 2//CdZnS (CIS) thin-film solar cells are evaluated. Bare cells (i.e. with no coverglass) were exposed to several energies of electron and proton radiation, and their performances were monitored by illuminated I-V curves, dark I-V curves, and spectral response measurements at different fluence levels. These experiments reconfirm that no measurable damage occurs to CIS solar cells when exposed to 1 and 2 MeV electrons to a total fluence of 5.0*10/sup 15/ cm/sup -2/. For proton irradiations, the results indicate that CIS cells are more radiation resistant than GaAs cells, by a factor of ten, when compared at the same energy levels. Comparison of the electron and proton irradiation results to those reported in the literature shows that the thin-film GaAs solar cells are as radiation resistant as other GaAs bulk cells at 1.0 MeV protons and are more radiation resistant at both the 1.0 MeV electron and 200 keV proton energies.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"6 1","pages":"909-912 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79900969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Design of hybrid PV systems 混合光伏系统的设计
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105889
H. Saha, R. Sathpathy, D. Mukherjee
{"title":"Design of hybrid PV systems","authors":"H. Saha, R. Sathpathy, D. Mukherjee","doi":"10.1109/PVSC.1988.105889","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105889","url":null,"abstract":"A generalized design methodology based on a basic need criterion was developed for a hybrid PV power system. Application of this methodology to a nonelectrified Indian village in Orissa yielded acceptable values of the optimum mixing ratio of the PV and wind energies. It is shown how PV and wind complement each other to provide year-long dependable energy economically.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"129 1","pages":"1174-1178 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77486011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A critical analysis of the determination of the density of defects in a-Si/sub 1-x/Ge/sub x/ alloys with the PDS technique PDS技术测定A - si /sub - 1-x/Ge/sub -x/合金缺陷密度的关键分析
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105690
D. Della Sala, C. Reita, G. Conte, F. Galluzzi, G. Grillo
{"title":"A critical analysis of the determination of the density of defects in a-Si/sub 1-x/Ge/sub x/ alloys with the PDS technique","authors":"D. Della Sala, C. Reita, G. Conte, F. Galluzzi, G. Grillo","doi":"10.1109/PVSC.1988.105690","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105690","url":null,"abstract":"The application of PDS (photothermal deflection spectroscopy) to the counting of defect states is complicated in a-Ge/sub x/Si/sub 1-x/ by the coexistence of two types of dangling bonds and their unknown energetic position in the forbidden energy gap. Using a model density of states, the authors conclude that it is intrinsically impossible to distinguish between Si and Ge dangling bonds. In addition, despite the fact that the density of bulk defects can be evaluated successfully, it is suggested that there is always a spurious absorption due to surface states. The measured density of dangling bonds keeps increasing from pure a-Si:H (N/sub d/ equivalent to 2*10/sup 16/ cm/sup -3/) to pure a-Ge:H (N/sub d/ equivalent to 5*10/sup 17/ cm/sup -3/), and this is shown to be a material property.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"22 1","pages":"212-217 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87149859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrochemical and galvanic corrosion effects in thin-film photovoltaic modules 薄膜光伏组件中的电化学和电偶腐蚀效应
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105667
G. Mon, L. Wen, J. Meyer, R. Ross, A. Nelson
{"title":"Electrochemical and galvanic corrosion effects in thin-film photovoltaic modules","authors":"G. Mon, L. Wen, J. Meyer, R. Ross, A. Nelson","doi":"10.1109/PVSC.1988.105667","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105667","url":null,"abstract":"The electrochemical and galvanic corrosion properties of thin-film photovoltaic (TF-PV) modules (solar cells) and module subcomponents are determined and interpreted in the light of established corrosion science. Results of a detailed study of thin-film aluminum metallization corrosion are presented. Bar-graph corrosion, observed in fielded modules, has been induced experimentally and found to be electrochemical in nature. Corrosion rates and passivation techniques for TF-PV modules are discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"9 1","pages":"108-113 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90921580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Test and study of utility interface and control problems for residential PV systems in Rokko Island 200 kW test facility 住宅光伏系统在六甲岛200kw试验台的效用接口及控制问题的测试与研究
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105868
Y. Takeda, K. Takigawa, H. Kobayashi, K. Nakahara, T. Morishita, A. Kitamura, A. Miyoshi, H. Matsuda, S. Komatsu
{"title":"Test and study of utility interface and control problems for residential PV systems in Rokko Island 200 kW test facility","authors":"Y. Takeda, K. Takigawa, H. Kobayashi, K. Nakahara, T. Morishita, A. Kitamura, A. Miyoshi, H. Matsuda, S. Komatsu","doi":"10.1109/PVSC.1988.105868","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105868","url":null,"abstract":"A 200 kW test facility comprising one hundred 2 kWp PV systems and a simulated utility grid was constructed to establish an adequate utility interface and control technology for small-scale dispersed PV systems. Experimental results are described. Demonstration experiments were performed, and the results show that the harmonic distortion in the distribution line was little influenced, and the problem of harmonics has been almost solved. It is confirmed that appropriate measures must be established for prevention of voltage variation in the low-voltage distribution line and for prevention of islanding during power outages. Solutions to these problems were also investigated using this facility.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"43 1","pages":"1062-1067 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91225787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Deposition of CuInSe/sub 2/ by the hybrid sputtering-and-evaporation method 溅射-蒸发法沉积CuInSe/ sub2 /
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105961
A. Rockett, T. Lommasson, L. Yang, H. Talieh, P. Campos, J. Thornton
{"title":"Deposition of CuInSe/sub 2/ by the hybrid sputtering-and-evaporation method","authors":"A. Rockett, T. Lommasson, L. Yang, H. Talieh, P. Campos, J. Thornton","doi":"10.1109/PVSC.1988.105961","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105961","url":null,"abstract":"The initial results of experiments characterizing CuInSe/sub 2/ deposition by a hybrid sputtering-and-evaporation technique are presented. The method yields films with compositions and structural properties comparable with those commonly accepted for polycrystalline CuInSe/sub 2/ over a large composition range at growth temperatures up to 450 degrees C. Film compositions are uniform to within +or-1 atomic percent, and nonuniformities can be directly related to the deposition geometry. The Se flux is shown to play a major role in determining both the Se and the In contents of the films at elevated temperatures. The substrate properties strongly affect the film composition. Layers deposited on sputtered Mo surfaces exhibit a lower In content than films on glass at all temperatures examined. Cu, In, and Se diffusion into the column boundaries of the Mo substrates is observed at all growth temperatures.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"17 1","pages":"1505-1509 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73777240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Modelling of the influence of dislocations on effective diffusion length and photocurrent of polycrystalline silicon cells 位错对多晶硅电池有效扩散长度和光电流影响的建模
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105987
H. El Ghitani, S. Martinuzzi
{"title":"Modelling of the influence of dislocations on effective diffusion length and photocurrent of polycrystalline silicon cells","authors":"H. El Ghitani, S. Martinuzzi","doi":"10.1109/PVSC.1988.105987","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105987","url":null,"abstract":"Green's function is used to establish a three-dimensional model to obtain a detailed rigorous analytical expression of the effect of dislocations. The predictions of the model were verified by measuring the photocurrent, the spectral response, and the effective diffusion lengths of minority carriers (L/sub eff/) and by evaluating the dislocation etch pit density. Three materials are considered, POLYX, SILSO, and SEMIX, which differ by the value of the diffusion length (L/sub n/) in the homogeneous regions of the bulk. It is found that the values of J/sub sc/ and L/sub eff/ are dependent on N/sub dis/ and S/sub d/ provided they are greater than 10/sup 4/ cm/sup -2/ and 10/sup 4/ cm-s/sup -1/, respectively. The computed variations also depend on the value of the diffusion length in the homogeneous region of the bulk material. A reasonable agreement is found with experimental results obtained with large-grained polycrystalline materials such as SILSO and POLYX.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"10 1","pages":"1624-1628 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72967522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photon degradation of AlGaAs/GaAs solar cells AlGaAs/GaAs太阳能电池的光子降解
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105852
B. Anspaugh, R. Kachare, P. Iles
{"title":"Photon degradation of AlGaAs/GaAs solar cells","authors":"B. Anspaugh, R. Kachare, P. Iles","doi":"10.1109/PVSC.1988.105852","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105852","url":null,"abstract":"The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 29 degrees C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"102 1","pages":"985-989 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74260163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Photoluminescence quenching by electric fields in hydrogenated amorphous silicon 氢化非晶硅的电场致光猝灭
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI: 10.1109/PVSC.1988.105686
T. Muschik, R. Schwarz, H. Curtins, M. Favre
{"title":"Photoluminescence quenching by electric fields in hydrogenated amorphous silicon","authors":"T. Muschik, R. Schwarz, H. Curtins, M. Favre","doi":"10.1109/PVSC.1988.105686","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105686","url":null,"abstract":"The decrease of photoluminescence (PL) intensity at low temperature was measured as a function of external fields (up to 3*10/sup 5/ V/cm) in hydrogenated amorphous silicon (a-Si:H). The results are discussed within the framework of the recombination of geminate pairs together with basic physical phenomena such as carrier separation during thermalization trapping of photoexcited carriers in band tails, and possible subsequent reemission or tunneling out of traps. It is concluded that separation of carriers during relaxation in extended and flat tail states is the dominant process for the field quenching of PL intensity. But other processes such as Poole-Frenkel emission and tunneling out of traps cannot be ruled out totally. The basic idea of carrier separation is supported by consistent values for the average mobility from both the quenching of PL intensity with electric fields and the concomitant energy shift of the maximum in the PL spectra.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"118 1","pages":"191-195 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77397337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信