Photon degradation of AlGaAs/GaAs solar cells

B. Anspaugh, R. Kachare, P. Iles
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引用次数: 4

Abstract

The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 29 degrees C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.<>
AlGaAs/GaAs太阳能电池的光子降解
研究了砷化镓太阳能电池在长时间曝光后的发光特性。超过55个OMCVD AlGaAs/GaAs太阳能电池在29摄氏度的温度下,在三个独立的、控制良好的运行中暴露在AM0光子下超过400小时。在三次运行中有两次观察到太阳能电池效率显著下降。虽然开路电压、填充系数和最大功率有明显的损失,但短路电流没有变化。在其中一次运行中,在测试细胞或控制细胞中都没有看到变化。这一趟的每个牢房都用玻璃罩保护着。与其他两次运行的细胞相比,这次运行的细胞具有更厚的缓冲层和更薄的窗口层
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CiteScore
1.40
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