2008 International Conference on Electronic Design最新文献

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Decimal multiplication using compact BCD multiplier 十进制乘法使用紧凑的BCD乘法器
2008 International Conference on Electronic Design Pub Date : 2008-12-01 DOI: 10.1109/ICED.2008.4786744
R. K. James, T. Shahana, K. Jacob, S. Sasi
{"title":"Decimal multiplication using compact BCD multiplier","authors":"R. K. James, T. Shahana, K. Jacob, S. Sasi","doi":"10.1109/ICED.2008.4786744","DOIUrl":"https://doi.org/10.1109/ICED.2008.4786744","url":null,"abstract":"Decimal multiplication is an integral part of financial, commercial, and internet-based computations. The basic building block of a decimal multiplier is a single digit multiplier. It accepts two Binary Coded Decimal (BCD) inputs and gives a product in the range [0, 81] represented by two BCD digits. A novel design for single digit decimal multiplication that reduces the critical path delay and area is proposed in this research. Out of the possible 256 combinations for the 8-bit input, only hundred combinations are valid BCD inputs. In the hundred valid combinations only four combinations require 4 times 4 multiplication, 64 combinations need 3 times 3 multiplication, and the remaining 32 combinations use either 3 times 4 or 4 times 3 multiplication. The proposed design makes use of this property. This design leads to more regular VLSI implementation, and does not require special registers for storing easy multiples. This is a fully parallel multiplier utilizing only combinational logic, and is extended to a Hex/Decimal multiplier that gives either a decimal output or a binary output. The accumulation of partial products generated using single digit multipliers is done by an array of multi-operand BCD adders for an (n-digit times n-digit) multiplication.","PeriodicalId":103889,"journal":{"name":"2008 International Conference on Electronic Design","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130202168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
Compact fractal boundary microstrip antenna for RF applications 射频应用的紧凑分形边界微带天线
2008 International Conference on Electronic Design Pub Date : 2008-12-01 DOI: 10.1109/ICED.2008.4786715
P. N. Rao, N. Sarma
{"title":"Compact fractal boundary microstrip antenna for RF applications","authors":"P. N. Rao, N. Sarma","doi":"10.1109/ICED.2008.4786715","DOIUrl":"https://doi.org/10.1109/ICED.2008.4786715","url":null,"abstract":"A compact linearly polarized fractal boundary microstrip antenna is presented. There is a reduction of resonance frequency from 2525 MHz to 1896 MHz i.e around 25 % with the proposed antenna compared to the square patch of the same size. The antenna provides gain of about 4.9 dBi over the entire band of frequencies. By changing the indentation depth factor of the boundary of the fractal curve, it is also possible to control the resonance frequency effectively.","PeriodicalId":103889,"journal":{"name":"2008 International Conference on Electronic Design","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131341599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel on chip LDO voltage regulator in 180nm 一种新颖的180nm片上LDO稳压器
2008 International Conference on Electronic Design Pub Date : 2008-12-01 DOI: 10.1109/ICED.2008.4786685
P. Rao, K. Krishnaprasad
{"title":"A Novel on chip LDO voltage regulator in 180nm","authors":"P. Rao, K. Krishnaprasad","doi":"10.1109/ICED.2008.4786685","DOIUrl":"https://doi.org/10.1109/ICED.2008.4786685","url":null,"abstract":"An on chip low drop out voltage regulator that employs a simple fast path and an elegant compensation scheme is presented in this paper. The novelty in this design is that the device parasitic capacitances are exploited for compensation at different loads. The proposed LDO is designed to provide a constant voltage of 1.2 V and is implemented in UMC 180 nano meter CMOS technology. The voltage regulator presented improves stability even at lighter loads and enhances line and load regulation while providing reasonably good transient response.","PeriodicalId":103889,"journal":{"name":"2008 International Conference on Electronic Design","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128784029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Structure design challenge in Nano-CMOS device 纳米cmos器件的结构设计挑战
2008 International Conference on Electronic Design Pub Date : 2008-12-01 DOI: 10.1109/ICED.2008.4786729
R. Sanudin, M. Morsin, M. S. Sulong
{"title":"Structure design challenge in Nano-CMOS device","authors":"R. Sanudin, M. Morsin, M. S. Sulong","doi":"10.1109/ICED.2008.4786729","DOIUrl":"https://doi.org/10.1109/ICED.2008.4786729","url":null,"abstract":"This paper intends to report the problems and challenges that lie ahead in transistor design methodology in nano-CMOS structure. Thus, it is desired to see the options in improving the device design on top of continuing the scaling process of transistor in the next few years to come. The main concern is to see how the transistors behave as the size of device shrinks down to below 100 nm range. Besides, the demand of future generations is expected as a result of more compact of digital circuit. It is concluded that although several problems surfaces as the transistor enters the nano-CMOS era, there are excellent options to solve those problems and thus could help to reduce the transistor size and yet uncompromised the device performance.","PeriodicalId":103889,"journal":{"name":"2008 International Conference on Electronic Design","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129266988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new approach for identifying fiber fault and detecting failure location 一种光纤故障识别和故障定位的新方法
2008 International Conference on Electronic Design Pub Date : 2008-12-01 DOI: 10.1109/ICED.2008.4786636
M. Ab-Rahman, N. Chuan, A. Premadi, K. Jumari
{"title":"A new approach for identifying fiber fault and detecting failure location","authors":"M. Ab-Rahman, N. Chuan, A. Premadi, K. Jumari","doi":"10.1109/ICED.2008.4786636","DOIUrl":"https://doi.org/10.1109/ICED.2008.4786636","url":null,"abstract":"Optical time domain reflectometer (OTDR) is used to measure fiber attenuation and loss as well as locate connection, splice, crack, bend, and breakdown along an optical fiber. This paper proposed and demonstrated a MATLAB-based graphical user interface (GUI) named as centralized failure detection system (CFDS) that able to measure the optical signal level, attenuation, loss and also locate the break point in faulty fiber for multi fibers in a time. CFDS is interfaced with the OTDR to accumulate every measurement result to be displayed on a single computer screen for further analysis. CFDS will identify and present the parameters of optical fiber such as the fiber's status either in working or non-working condition (occur breakdown or failure in a faulty fiber), magnitude of decreasing as well as the location, failure location and other details as shown in the OTDR's screen.","PeriodicalId":103889,"journal":{"name":"2008 International Conference on Electronic Design","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116123143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Methods of measurement of LTCC metallization thickness LTCC金属化厚度的测量方法
2008 International Conference on Electronic Design Pub Date : 2008-12-01 DOI: 10.1109/ICED.2008.4786684
L. S. Khiang, N. Ahmad, M. Isa, R. Alias
{"title":"Methods of measurement of LTCC metallization thickness","authors":"L. S. Khiang, N. Ahmad, M. Isa, R. Alias","doi":"10.1109/ICED.2008.4786684","DOIUrl":"https://doi.org/10.1109/ICED.2008.4786684","url":null,"abstract":"Metallization provides electrical routing and serves as thermal via in LTCC (Low Temperature Cofired Ceramic) technology. High electrical and thermal conductivity is desirable. It is often achieved with the use of low electrical resistance materials, such as gold, silver and copper. The conductive paste made of these materials is expensive. Hence, the fabrication of LTCC has to be performance-wise and cost effective. The width, length and thickness of metallization are associated with the amount of conductor paste used. The thickness of metallization governs the functionality and performance of some components, such as resistor. In this paper, the physical attributes of LTCC substrate and its metallization was studied. Due to the constraint brought by the physical attributes of LTCC samples, various methods had been carried out. This paper also summarized the pros and cons of each method. The methods are limited to the equipment available.","PeriodicalId":103889,"journal":{"name":"2008 International Conference on Electronic Design","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114241199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ON chip LDO voltage regulator with improved transient response in 180nm 改进180nm瞬态响应的ON片LDO稳压器
2008 International Conference on Electronic Design Pub Date : 2008-12-01 DOI: 10.1109/ICED.2008.4786743
P. Rao, K. K. Krishna Prasad
{"title":"ON chip LDO voltage regulator with improved transient response in 180nm","authors":"P. Rao, K. K. Krishna Prasad","doi":"10.1109/ICED.2008.4786743","DOIUrl":"https://doi.org/10.1109/ICED.2008.4786743","url":null,"abstract":"An ON chip LDO voltage regulator is presented in this paper with improved transient response. The sluggish nature of pass transistor mandates techniques to improve transient ripple and settling time against sudden load transients. An independent fast path is employed that facilitates the LDO to respond quickly to the sudden load variations. This enables reduction in the consequent ripple in the output voltage. The fast path is designed in such a way that it provides easy migration to the other process without much degradation in the performance. The proposed LDO is designed to provide a constant voltage of 1.2V and is implemented in UMC 1.8 mu CMOS technology. It features peak overshoot as low as 60 mV and very fast settling time of 6 musec.","PeriodicalId":103889,"journal":{"name":"2008 International Conference on Electronic Design","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126105413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
FPGA implementation of isolated digit recognition system using modified back propagation algorithm 基于改进反向传播算法的孤立数字识别系统的FPGA实现
2008 International Conference on Electronic Design Pub Date : 2008-12-01 DOI: 10.1109/ICED.2008.4786712
V. Amudha, B. Venkataramani, J. Manikandan
{"title":"FPGA implementation of isolated digit recognition system using modified back propagation algorithm","authors":"V. Amudha, B. Venkataramani, J. Manikandan","doi":"10.1109/ICED.2008.4786712","DOIUrl":"https://doi.org/10.1109/ICED.2008.4786712","url":null,"abstract":"In this paper, the details of implementation of an isolated digit recognition system using NiosII soft-core processor are presented. Mel Frequency Cepstral Coefficients (MFCC) is used for feature extraction, multi layer perceptron (MLP) is used for classification and self organized feature map (SOFM) is employed for dimensionality reduction of features. Using TIDIGITS speech data base, various MLP architectures are studied and it is found that the recognition accuracy of 100% is obtained with the least computational complexity using single layer MLP with 10 hidden nodes. MLP is trained using both BP and modified BP algorithms and it is observed that MBP is 2.62 times faster than BP with 100% recognition accuracy. The digit recognition system is implemented on Altera CycloneII FPGA using hardware/software partitioning and the following observations are made: implementation of radix-4 FFT and remaining blocks for the calculation of MFCC using universal CORDIC processor as hardware/software partitioning is dasia10psila times faster compared to the complete software implementation on NiosII processor. The hardware accelerator for the NIOSII processor for implementation of MLP increases the recognition speed by a factor of 278. The technique proposed in this paper is also applicable for other soft-core processor such as Microblaze and Picoblaze.","PeriodicalId":103889,"journal":{"name":"2008 International Conference on Electronic Design","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124072226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Development of efficient adaptive noise canceller using low complexity filter banks 采用低复杂度滤波器组的高效自适应消噪器的研制
2008 International Conference on Electronic Design Pub Date : 2008-12-01 DOI: 10.1109/ICED.2008.4786742
A.O. Abid Noor, S. Samad, A. Hussain
{"title":"Development of efficient adaptive noise canceller using low complexity filter banks","authors":"A.O. Abid Noor, S. Samad, A. Hussain","doi":"10.1109/ICED.2008.4786742","DOIUrl":"https://doi.org/10.1109/ICED.2008.4786742","url":null,"abstract":"In this paper an efficient adaptive noise canceller is presented. The canceller is based on low complexity optimized multirate filter banks. This work was motivated by the fact that adaptive noise cancellers suffer from slow convergence due to colored interfering signals as well as high computational burden due to long signal paths as in acoustic environment. The analysis stage is implemented with maximally decimated infinite impulse response IIR filter bank based on second order allpass sections. The synthesis filter bank is optimized in the input/output relationship leading to near perfect reconstruction and compensating for phase distortion. The proposed scheme offers a lower computational complexity than that offered by oversampled solution. The efficiency of the proposed canceller was compared to an equivalent system that uses over sampled finite impulse response FIR filter banks at the analysis and synthesis stages.","PeriodicalId":103889,"journal":{"name":"2008 International Conference on Electronic Design","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122683609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A low power CMOS voltage reference circuit with subthreshold MOSFETs 具有亚阈值mosfet的低功耗CMOS电压参考电路
2008 International Conference on Electronic Design Pub Date : 2008-12-01 DOI: 10.1109/ICED.2008.4786728
S. Ramasamy, B. Venkataramani, P. Meenatchisundaram
{"title":"A low power CMOS voltage reference circuit with subthreshold MOSFETs","authors":"S. Ramasamy, B. Venkataramani, P. Meenatchisundaram","doi":"10.1109/ICED.2008.4786728","DOIUrl":"https://doi.org/10.1109/ICED.2008.4786728","url":null,"abstract":"In this paper, a novel approach is proposed for the design of Low power CMOS bandgap reference circuit. In the literature, an inversion technique is proposed to make the voltage reference to be independent of temperature by using parasitic bipolar transistors. In the above technique, this paper proposes the use of MOSFETs operating in subthreshold region for generating a voltage with negative temperature coefficient. The performance of the proposed scheme is studied by implementing the bandgap reference circuit for 1.2 V in TSMC035 CMOS process. Studies through Mentorgraphics IC station and Eldo simulator demonstrate that the proposed scheme has a voltage reference with temperature coefficient of less than 50 ppm/degC over the temperature range of -10degC to 120degC. The proposed scheme results in eighteen times lesser area and dissipates ten times lower power compared with that using parasitic bipolar transistors. The circuit technique has been validated using both NMOS and PMOS diode connected subthreshold MOSFETs for generating voltages with negative temperature coefficient.","PeriodicalId":103889,"journal":{"name":"2008 International Conference on Electronic Design","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121853761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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