Chinese Physics Letters最新文献_第3页

Normal and Superconducting Properties of La3Ni2O7 La3Ni2O7 的正常和超导特性

IF 3.5 2区物理与天体物理

Chinese Physics Letters Pub Date : 2024-06-30 DOI: 10.1088/0256-307x/41/7/077402

Meng Wang, 猛王, Hai-Hu Wen, 海虎闻, Tao Wu, 涛吴, Dao-Xin Yao, 道新姚, Tao Xiang and 涛向

引用次数: 0

Dynamics of Ring Dark Solitons and the Following Vortices in Spin-1 Bose–Einstein Condensates 自旋-1 玻色-爱因斯坦凝聚态中的环形暗孤子和继涡动力学

IF 3.5 2区物理与天体物理

Chinese Physics Letters Pub Date : 2024-06-30 DOI: 10.1088/0256-307x/41/7/070501

Yu Zhong, 毓钟, Houria Triki, Qin Zhou and 勤周

引用次数: 0

Decoupling of Rattling Mode and Superconductivity in Filled-Skutterudite BaxIr4Sb12 填充砚石 BaxIr4Sb12 中的响声模式与超导性的解耦

IF 3.5 2区物理与天体物理

Chinese Physics Letters Pub Date : 2024-06-30 DOI: 10.1088/0256-307x/41/7/077401

Hui Liu, 辉刘, Tongxu Yu, 同旭于, Zhihua Zhang, 志华张, Tianping Ying and 天平应

引用次数: 0

Ultrasensitive Mechanical Sensor Using Tunable Ordered Array of Metallic and Insulating States in Vanadium Dioxide 使用二氧化钒中金属态和绝缘态的可调谐有序阵列的超灵敏机械传感器

IF 3.5 2区物理与天体物理

Chinese Physics Letters Pub Date : 2024-06-30 DOI: 10.1088/0256-307x/41/7/077101

Zecheng Ma, 泽成马, Shengnan Yan, 胜楠闫, Fanqiang Chen, 繁强陈, Yudi Dai, 玉頔戴, Zenglin Liu, 增霖刘, Kang Xu, 康徐, Tao Xu, 涛徐, Zhanqin Tong, 湛钦童, Moyu Chen, 墨雨陈, Lizheng Wang, 利铮王, Pengfei Wang, 鹏飞王, Litao Sun, 立涛孙, Bin Cheng, 斌程, Shi-Jun Liang, 世军梁, Feng Miao and 峰缪

{"title":"Ultrasensitive Mechanical Sensor Using Tunable Ordered Array of Metallic and Insulating States in Vanadium Dioxide","authors":"Zecheng Ma, 泽成马, Shengnan Yan, 胜楠闫, Fanqiang Chen, 繁强陈, Yudi Dai, 玉頔戴, Zenglin Liu, 增霖刘, Kang Xu, 康徐, Tao Xu, 涛徐, Zhanqin Tong, 湛钦童, Moyu Chen, 墨雨陈, Lizheng Wang, 利铮王, Pengfei Wang, 鹏飞王, Litao Sun, 立涛孙, Bin Cheng, 斌程, Shi-Jun Liang, 世军梁, Feng Miao and 峰缪","doi":"10.1088/0256-307x/41/7/077101","DOIUrl":"https://doi.org/10.1088/0256-307x/41/7/077101","url":null,"abstract":"Detecting tiny deformations or vibrations, particularly those associated with strains below 1%, is essential in various technological applications. Traditional intrinsic materials, including metals and semiconductors, face challenges in simultaneously achieving initial metallic state and strain-induced insulating state, hindering the development of highly sensitive mechanical sensors. Here we report an ultrasensitive mechanical sensor based on a strain-induced tunable ordered array of metallic and insulating states in the single-crystal bronze-phase vanadium dioxide [VO2(B)] quantum material. It is shown that the initial metallic state in the VO2(B) flake can be tuned to the insulating state by applying a weak uniaxial tensile strain. Such a unique property gives rise to a record-high gauge factor of above 607970, surpassing previous values by an order of magnitude, with excellent linearity and mechanical resilience as well as durability. As a proof-of-concept application, we use our proposed mechanical sensor to demonstrate precise sensing of the micro piece, gentle airflows and water droplets. We attribute the superior performance of the sensor to the strain-induced continuous metal-insulator transition in the single-crystal VO2(B) flake, evidenced by experimental and simulation results. Our findings highlight the potential of exploiting correlated quantum materials for next-generation ultrasensitive flexible mechanical sensors, addressing critical limitations in traditional materials.","PeriodicalId":10344,"journal":{"name":"Chinese Physics Letters","volume":"340 1","pages":""},"PeriodicalIF":3.5,"publicationDate":"2024-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141738106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-Voltage IGZO Field-Effect Ultraviolet Photodiode 低电压 IGZO 场效应紫外线光电二极管

IF 3.5 2区物理与天体物理

Chinese Physics Letters Pub Date : 2024-06-01 DOI: 10.1088/0256-307x/41/6/068501

Shuang Song, Huili Liang, Wenxing Huo, Guang Zhang, Yonghui Zhang, Jiwei Wang, Zengxia Mei

{"title":"Low-Voltage IGZO Field-Effect Ultraviolet Photodiode","authors":"Shuang Song, Huili Liang, Wenxing Huo, Guang Zhang, Yonghui Zhang, Jiwei Wang, Zengxia Mei","doi":"10.1088/0256-307x/41/6/068501","DOIUrl":"https://doi.org/10.1088/0256-307x/41/6/068501","url":null,"abstract":"In the era of Internet of Things (IoTs), an energy-efficient ultraviolet (UV) photodetector (PD) is highly desirable considering the massive usage scenarios such as environmental sterilization, fire alarm and corona discharge monitoring. So far, common self-powered UV PDs are mainly based on metal-semiconductor hetero-structures or p–n heterojunctions, where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity. In this work, an extremely low-voltage field-effect UV PD is proposed using a gate-drain shorted amorphous IGZO (a-IGZO) thin film transistor (TFT) architecture. A combined investigation of the experimental measurements and technology computer-aided design (TCAD) simulations suggests that the reverse current (<italic toggle=\"yes\">I</italic>R) of field-effect diode (FED) is highly related with the threshold voltage (<italic toggle=\"yes\">V</italic>th) of the parental TFT, implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current. Driven by a low bias of −0.1 V, decent UV response has been realized including large UV/visible (<italic toggle=\"yes\">R</italic>300/<italic toggle=\"yes\">R</italic>550) rejection ratio (1.9 × 103), low dark current (1.15 × 10−12 A) as well as high photo-to-dark current ratio (PDCR, ∼ 103) and responsivity (1.89 A/W). This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias, which is attractive for designs of large-scale smart sensor networks with high energy efficiency.","PeriodicalId":10344,"journal":{"name":"Chinese Physics Letters","volume":"40 1","pages":""},"PeriodicalIF":3.5,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141574781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Imaging plate scanners calibration and the attenuation behavior of imaging plate signals 成像板扫描仪的校准和成像板信号的衰减行为

IF 3.5 2区物理与天体物理

Chinese Physics Letters Pub Date : 2024-06-01 DOI: 10.1088/1674-1056/ad43d4

Nan Bo, Nai-Yan Wang

引用次数: 0

Dissipation-Driven Superradiant Phase Transition of a Two-Dimensional Bose–Einstein Condensate in a Double Cavity 双腔中二维玻色-爱因斯坦凝结物的耗散驱动超辐射相变

IF 3.5 2区物理与天体物理

Chinese Physics Letters Pub Date : 2024-06-01 DOI: 10.1088/0256-307x/41/6/064201

Bo-Hao Wu, Xin-Xin Yang, Yu Chen, Wei Zhang

引用次数: 0

Universal Machine Learning Kohn–Sham Hamiltonian for Materials 材料的通用机器学习 Kohn-Sham 哈密顿方程

IF 3.5 2区物理与天体物理

Chinese Physics Letters Pub Date : 2024-05-31 DOI: 10.1088/0256-307x/41/7/077103

Yang Zhong, 阳钟, Hongyu Yu, 宏宇于, Jihui Yang, 吉辉杨, Xingyu Guo, 星宇郭, Hongjun Xiang, 红军向, Xingao Gong and 新高龚

{"title":"Universal Machine Learning Kohn–Sham Hamiltonian for Materials","authors":"Yang Zhong, 阳钟, Hongyu Yu, 宏宇于, Jihui Yang, 吉辉杨, Xingyu Guo, 星宇郭, Hongjun Xiang, 红军向, Xingao Gong and 新高龚","doi":"10.1088/0256-307x/41/7/077103","DOIUrl":"https://doi.org/10.1088/0256-307x/41/7/077103","url":null,"abstract":"While density functional theory (DFT) serves as a prevalent computational approach in electronic structure calculations, its computational demands and scalability limitations persist. Recently, leveraging neural networks to parameterize the Kohn–Sham DFT Hamiltonian has emerged as a promising avenue for accelerating electronic structure computations. Despite advancements, challenges such as the necessity for computing extensive DFT training data to explore each new system and the complexity of establishing accurate machine learning models for multi-elemental materials still exist. Addressing these hurdles, this study introduces a universal electronic Hamiltonian model trained on Hamiltonian matrices obtained from first-principles DFT calculations of nearly all crystal structures on the Materials Project. We demonstrate its generality in predicting electronic structures across the whole periodic table, including complex multi-elemental systems, solid-state electrolytes, Moiré twisted bilayer heterostructure, and metal-organic frameworks. Moreover, we utilize the universal model to conduct high-throughput calculations of electronic structures for crystals in GNoME datasets, identifying 3940 crystals with direct band gaps and 5109 crystals with flat bands. By offering a reliable efficient framework for computing electronic properties, this universal Hamiltonian model lays the groundwork for advancements in diverse fields, such as easily providing a huge data set of electronic structures and also making the materials design across the whole periodic table possible.","PeriodicalId":10344,"journal":{"name":"Chinese Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":3.5,"publicationDate":"2024-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141503316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cosmology-Independent Photon Mass Limits from Localized Fast Radio Bursts by Using Artificial Neural Networks 利用人工神经网络从局部快速射电暴得出与宇宙学无关的光子质量极限

IF 3.5 2区物理与天体物理

Chinese Physics Letters Pub Date : 2024-05-01 DOI: 10.1088/0256-307x/41/5/059501

Jing-Yu Ran, Bao Wang, Jun-Jie Wei

{"title":"Cosmology-Independent Photon Mass Limits from Localized Fast Radio Bursts by Using Artificial Neural Networks","authors":"Jing-Yu Ran, Bao Wang, Jun-Jie Wei","doi":"10.1088/0256-307x/41/5/059501","DOIUrl":"https://doi.org/10.1088/0256-307x/41/5/059501","url":null,"abstract":"A hypothetical photon mass <italic toggle=\"yes\">mγ\u0000</italic> can produce a frequency-dependent vacuum dispersion of light, which leads to an additional time delay between photons with different frequencies when they propagate through a fixed distance. The dispersion measure and redshift measurements of fast radio bursts (FRBs) have been widely used to constrain the rest mass of the photon. However, all current studies analyzed the effect of the frequency-dependent dispersion for massive photons in the standard ΛCDM cosmological context. In order to alleviate the circularity problem induced by the presumption of a specific cosmological model based on the fundamental postulate of the masslessness of photons, here we employ a new model-independent smoothing technique, artificial neural network (ANN), to reconstruct the Hubble parameter <italic toggle=\"yes\">H</italic>(<italic toggle=\"yes\">z</italic>) function from 34 cosmic-chronometer measurements. By combining observations of 32 well-localized FRBs and the <italic toggle=\"yes\">H</italic>(<italic toggle=\"yes\">z</italic>) function reconstructed by ANN, we obtain an upper limit of <italic toggle=\"yes\">mγ\u0000</italic> ≤ 3.5 × 10−51 kg, or equivalently <italic toggle=\"yes\">mγ\u0000</italic> ≤ 2.0 × 10−15 eV/c2 (<italic toggle=\"yes\">mγ\u0000</italic> ≤ 6.5 × 10−51 kg, or equivalently <italic toggle=\"yes\">mγ\u0000</italic> ≤ 3.6 × 10−15 eV/c2) at the 1<italic toggle=\"yes\">σ</italic> (2<italic toggle=\"yes\">σ</italic>) confidence level. This is the first cosmology-independent photon mass limit derived from extragalactic sources.","PeriodicalId":10344,"journal":{"name":"Chinese Physics Letters","volume":"50 1","pages":""},"PeriodicalIF":3.5,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141190321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Current-Induced Magnetization Switching Behavior in Perpendicular Magnetized L10-MnAl/B2-CoGa Bilayer 垂直磁化 L10-MnAl/B2-CoGa 双层中电流诱导的磁化切换行为

IF 3.5 2区物理与天体物理

Chinese Physics Letters Pub Date : 2024-05-01 DOI: 10.1088/0256-307x/41/5/057503

Hong-Li Sun, Rong-Kun Han, Hong-Rui Qin, Xu-Peng Zhao, Zhi-Cheng Xie, Da-Hai Wei, Jian-Hua Zhao

{"title":"Current-Induced Magnetization Switching Behavior in Perpendicular Magnetized L10-MnAl/B2-CoGa Bilayer","authors":"Hong-Li Sun, Rong-Kun Han, Hong-Rui Qin, Xu-Peng Zhao, Zhi-Cheng Xie, Da-Hai Wei, Jian-Hua Zhao","doi":"10.1088/0256-307x/41/5/057503","DOIUrl":"https://doi.org/10.1088/0256-307x/41/5/057503","url":null,"abstract":"Rare-earth-free Mn-based binary alloy L10-MnAl with bulk perpendicular magnetic anisotropy (PMA) holds promise for high-performance magnetic random access memory (MRAM) devices driven by spin-orbit torque (SOT). However, the lattice-mismatch issue makes it challenging to place conventional spin current sources, such as heavy metals, between L10-MnAl layers and substrates. In this work, we propose a solution by using the B2-CoGa alloy as the spin current source. The lattice-matching enables high-quality epitaxial growth of 2-nm-thick L10-MnAl on B2-CoGa, and the L10-MnAl exhibits a large PMA constant of 1.04 × 106 J/m3. Subsequently, the considerable spin Hall effect in B2-CoGa enables the achievement of SOT-induced deterministic magnetization switching. Moreover, we quantitatively determine the SOT efficiency in the bilayer. Furthermore, we design an L10-MnAl/B2-CoGa/Co2MnGa structure to achieve field-free magnetic switching. Our results provide valuable insights for achieving high-performance SOT-MRAM devices based on L10-MnAl alloy.","PeriodicalId":10344,"journal":{"name":"Chinese Physics Letters","volume":"14 1","pages":""},"PeriodicalIF":3.5,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141516029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0