电荷密度波 Bi2Rh3Se2 中的平面霍尔效应

IF 3.5 2区物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY

Chinese Physics Letters Pub Date : 2024-07-01 DOI:10.1088/0256-307x/41/7/077303

Mingju Cai, Zheng Chen, Yang Yang, Xiangde Zhu, Haoxiang Sun, Ankang Zhu, Xue Liu, Yuyan Han, Wenshuai Gao, Mingliang Tian

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引用次数: 0

摘要

我们系统地研究了三元瑀 Bi2Rh3Se2 的面内传输特性。当磁场在样品平面内旋转时，我们可以清楚地检测到平面霍尔电阻和各向异性纵向电阻的存在，而且出现的现象可以用平面霍尔效应（PHE）的理论公式精确描述。此外，在 Bi2Rh3Se2 中，主导 PHE 的是各向异性轨道磁阻，而不是拓扑非三维手性反常现象。这一发现不仅为了解 PHE 的机理提供了另一个平台，而且对未来基于二维材料的平面霍尔传感器也大有裨益。

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Planar Hall Effect in the Charge-Density-Wave Bi2Rh3Se2

We systematically investigate in-plane transport properties of ternary chalcogenide Bi₂Rh₃Se₂. Upon rotating the magnetic field within the plane of the sample, one can distinctly detect the presence of both planar Hall resistance and anisotropic longitudinal resistance, and the phenomena appeared are precisely described by the theoretical formulation of the planar Hall effect (PHE). In addition, anisotropic orbital magnetoresistance rather than topologically nontrivial chiral anomalies dominates the PHE in Bi₂Rh₃Se₂. The finding not only provides another platform for understanding the mechanism of PHE, but could also be beneficial for future planar Hall sensors based on two-dimensional materials.

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来源期刊

Chinese Physics Letters 物理-物理：综合

CiteScore

5.90

自引率

8.60%

发文量

13238

审稿时长

4 months

期刊介绍： Chinese Physics Letters provides rapid publication of short reports and important research in all fields of physics and is published by the Chinese Physical Society and hosted online by IOP Publishing.