S. Roberts, M. Grande, J. Batstone, J. Steeds, P. J. Dean, P. J. Wright, B. Cockayne
{"title":"Spatial distribution of donors in MOCVD ZnSe","authors":"S. Roberts, M. Grande, J. Batstone, J. Steeds, P. J. Dean, P. J. Wright, B. Cockayne","doi":"10.1201/9781003069614-51","DOIUrl":"https://doi.org/10.1201/9781003069614-51","url":null,"abstract":"","PeriodicalId":103093,"journal":{"name":"Microscopy of Semiconducting Materials, 1983","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129196611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Sinclair, F. Ponce, T. Yamashita, David J. Smith
{"title":"High resolution electron microscopy of II–VI compound semiconductors","authors":"R. Sinclair, F. Ponce, T. Yamashita, David J. Smith","doi":"10.1201/9781003069614-16","DOIUrl":"https://doi.org/10.1201/9781003069614-16","url":null,"abstract":"","PeriodicalId":103093,"journal":{"name":"Microscopy of Semiconducting Materials, 1983","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130657483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The atomic structure of the NiSi2/(001) Si interface","authors":"C. Hetherington, D. Cherns, C. Humphreys","doi":"10.1201/9781003069614-14","DOIUrl":"https://doi.org/10.1201/9781003069614-14","url":null,"abstract":"","PeriodicalId":103093,"journal":{"name":"Microscopy of Semiconducting Materials, 1983","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114086447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High resolution electron microscopy studies of native oxide on silicon","authors":"J. Mazur, R. Gronsky, J. Washburn","doi":"10.1201/9781003069614-12","DOIUrl":"https://doi.org/10.1201/9781003069614-12","url":null,"abstract":"High resolution electron microscopy (HREM) of cross-sectional specimens has shown that the thickness of the native oxide on silicon o is 20 ± 3A, independent of surface orientation. This result has con-o firmed the value 21 ,± 4A determined by ellipsometry assuming a stoichiometric Si02 native oxide. Previous reports of a nonstoichiometric transition layer between Si and Si02 containing an excess of 1015 cm-2 Si atoms have also been alternatively explained by the observed morphological features of the Si-Si02 interface.","PeriodicalId":103093,"journal":{"name":"Microscopy of Semiconducting Materials, 1983","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131247053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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