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2013 3rd IEEE CPMT Symposium Japan最新文献

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Plenary speech 全体的演讲
2013 3rd IEEE CPMT Symposium Japan Pub Date : 2021-12-21 DOI: 10.1109/hpcsim.2014.6903660
S. Akejima
{"title":"Plenary speech","authors":"S. Akejima","doi":"10.1109/hpcsim.2014.6903660","DOIUrl":"https://doi.org/10.1109/hpcsim.2014.6903660","url":null,"abstract":"Heterogeneous Integration Application autonomous vehicle, IoTs, and big data. The system-technology drivers This talk will review innovations in SiP technologies – Flip-Chip, Fan-Out, embedded and beyond, describing how these promises are fulfilled for achieving higher bandwidth, small form factor, with increased functionality and mixed wafer nodes, so very comprehensive Heterogenous Integration and Homogeneous Integration technologies for the AIoT, 5G and data center application.","PeriodicalId":101667,"journal":{"name":"2013 3rd IEEE CPMT Symposium Japan","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133386783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Self-written waveguide technology with light-curable resin enabling easy optical interconnection 采用光固化树脂的自写波导技术，实现轻松的光学互连
2013 3rd IEEE CPMT Symposium Japan Pub Date : 2014-09-01 DOI: 10.1109/ICP.2014.7002297
Y. Soeda, Tadayuki Enomoto, O. Mikami
{"title":"Self-written waveguide technology with light-curable resin enabling easy optical interconnection","authors":"Y. Soeda, Tadayuki Enomoto, O. Mikami","doi":"10.1109/ICP.2014.7002297","DOIUrl":"https://doi.org/10.1109/ICP.2014.7002297","url":null,"abstract":"We propose a new microscale 90° light-path conversion device and polymer V-grooves for optical interconnections. A light-curable resin is used for fabrication by the self-written waveguide method and by the mask-transfer self-written waveguide method.","PeriodicalId":101667,"journal":{"name":"2013 3rd IEEE CPMT Symposium Japan","volume":"35 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121158173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A cost effective TO-CAN packaged 10 Gbps EML module employing inductance compensation technique 采用电感补偿技术的具有成本效益的TO-CAN封装10 Gbps EML模块
2013 3rd IEEE CPMT Symposium Japan Pub Date : 2013-11-01 DOI: 10.1109/ICSJ.2013.6756087
M. Shirao, N. Ohata, K. Uto, H. Aruga
{"title":"A cost effective TO-CAN packaged 10 Gbps EML module employing inductance compensation technique","authors":"M. Shirao, N. Ohata, K. Uto, H. Aruga","doi":"10.1109/ICSJ.2013.6756087","DOIUrl":"https://doi.org/10.1109/ICSJ.2013.6756087","url":null,"abstract":"We successfully developed a cost-effective 1.55-μm 10 Gbps electro-absorption modulated laser (EML) in a transistor outline (TO)-CAN package employing an inductance compensation technique. A TO-CAN packaged EML demonstrated a good optical eye opening with a mask margin of 27%.","PeriodicalId":101667,"journal":{"name":"2013 3rd IEEE CPMT Symposium Japan","volume":"20 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127529793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of mechanical properties of Cu through-silicon-vias (TSV) specimen using electrodeposition bath 电沉积Cu - through-silicon-vias (TSV)试样力学性能的研究
2013 3rd IEEE CPMT Symposium Japan Pub Date : 2013-11-01 DOI: 10.1109/ICSJ.2013.6756079
Huiying Wang, P. Cheng, Su Wang, Hong Wang, Yang Yuan, Ting Gu, G. Ding
{"title":"Study of mechanical properties of Cu through-silicon-vias (TSV) specimen using electrodeposition bath","authors":"Huiying Wang, P. Cheng, Su Wang, Hong Wang, Yang Yuan, Ting Gu, G. Ding","doi":"10.1109/ICSJ.2013.6756079","DOIUrl":"https://doi.org/10.1109/ICSJ.2013.6756079","url":null,"abstract":"The Cu specimens were fabricated by the UV-LIGA process using the electrodeposition bath for through-silicon-via (TSV) filling. Mechanical property of th e Cu specimens was investigated by a uniaxial tensile test. The elastic modulus, yield strength, breaking stre ngth and ultimate strain are 95GPa, 314MPa, 367MPa and 12.4%, respectively. The results indicated that the yield strength and breaking strength of as-deposited Cu specimens were higher than that of the bulk Cu, while the elastic modulus was lower than that of the bulk Cu. The elastic modulus of C u thin film in surface and section are 115.7GPa and 105.4GPa measured by nanoindentation, respectively. This difference is caused by the difference of the grain orientation between the surface and section of Cu thin film.","PeriodicalId":101667,"journal":{"name":"2013 3rd IEEE CPMT Symposium Japan","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130344425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A broadband antenna with fan-shaped and trapezoidal elements on a printed circuit board for ultra-wideband radio 用于超宽带无线电的印刷电路板上带有扇形和梯形元件的宽带天线
2013 3rd IEEE CPMT Symposium Japan Pub Date : 2013-11-01 DOI: 10.1109/ICSJ.2013.6756104
F. Koshiji, Kazuya Hiraguri, K. Koshiji
{"title":"A broadband antenna with fan-shaped and trapezoidal elements on a printed circuit board for ultra-wideband radio","authors":"F. Koshiji, Kazuya Hiraguri, K. Koshiji","doi":"10.1109/ICSJ.2013.6756104","DOIUrl":"https://doi.org/10.1109/ICSJ.2013.6756104","url":null,"abstract":"In this paper, a half-sized unbalanced dipole antenna with fan-shaped and trapezoidal elements on a printed circuit board is proposed. The VSWR and radiation patterns of the proposed antenna were investigated. As a result, VSWR characteristics less than 2.0 and a relative bandwidth of 110 % over the frequency band of 3.1 GHz to 10.8 GHz were obtained from measurements. Radiation patterns similar to those of a normal dipole antenna, such as eight-shape and omni-directional radiation patterns, were obtained at 3.1 GHz. Although the radiation patterns at 10.6 GHz were slightly distorted compared with those of normal dipole antennas, they are acceptable for practical use.","PeriodicalId":101667,"journal":{"name":"2013 3rd IEEE CPMT Symposium Japan","volume":"1 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120898213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A damage-free sapphire substrate removal process to realize highly manufacturable wafer-level white LED package 一种无损伤的蓝宝石衬底去除工艺，可实现高度可制造的晶圆级白光LED封装
2013 3rd IEEE CPMT Symposium Japan Pub Date : 2013-11-01 DOI: 10.1109/ICSJ.2013.6756103
M. Shimojuku, A. Kojima, M. Shimada, Hideyuki Tomizawa, Y. Akimoto, H. Furuyama, Y. Sugizaki, H. Shibata
{"title":"A damage-free sapphire substrate removal process to realize highly manufacturable wafer-level white LED package","authors":"M. Shimojuku, A. Kojima, M. Shimada, Hideyuki Tomizawa, Y. Akimoto, H. Furuyama, Y. Sugizaki, H. Shibata","doi":"10.1109/ICSJ.2013.6756103","DOIUrl":"https://doi.org/10.1109/ICSJ.2013.6756103","url":null,"abstract":"We proposed a novel wafer level chip scale package in which Laser Lift Off (LLO) was adopted for substrate removal. We confirmed that the LLO did not cause both mechanical and thermal damages into GaN layer.","PeriodicalId":101667,"journal":{"name":"2013 3rd IEEE CPMT Symposium Japan","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121415389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth models of copper filling in through silicon via at different current density 不同电流密度下铜在硅孔中填充的生长模型
2013 3rd IEEE CPMT Symposium Japan Pub Date : 2013-11-01 DOI: 10.1109/ICSJ.2013.6756084
Zhaoyu Wang, P. Cheng, Hong Wang, Honglei Guo, G. Ding, Xiaolin Zhao, Jianhua Li
{"title":"Growth models of copper filling in through silicon via at different current density","authors":"Zhaoyu Wang, P. Cheng, Hong Wang, Honglei Guo, G. Ding, Xiaolin Zhao, Jianhua Li","doi":"10.1109/ICSJ.2013.6756084","DOIUrl":"https://doi.org/10.1109/ICSJ.2013.6756084","url":null,"abstract":"This paper compared the filling profile of electroplated Cu in through silicon via (TSV) with different aspect ratio at different current density. The experiment results indicated that bottom-up growth of Cu in TSV was obvious when the current density is 1 mA/cm2 and 3 mA/cm2. When the current density was 6 mA/cm2, the conformal growth of Cu was dominant. When the current density was 12 mA/cm2, the sub-conformal growth of Cu appeared combined with conformal growth.","PeriodicalId":101667,"journal":{"name":"2013 3rd IEEE CPMT Symposium Japan","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121675207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A study on self turn-on phenomenon in fast switching operation of high voltage power MOSFET 高压功率MOSFET快速开关工作中自导通现象的研究
2013 3rd IEEE CPMT Symposium Japan Pub Date : 2013-11-01 DOI: 10.1109/ICSJ.2013.6756115
T. Funaki
{"title":"A study on self turn-on phenomenon in fast switching operation of high voltage power MOSFET","authors":"T. Funaki","doi":"10.1109/ICSJ.2013.6756115","DOIUrl":"https://doi.org/10.1109/ICSJ.2013.6756115","url":null,"abstract":"This paper analytically discusses the self turn-on phenomenon for SiC power MOSFET with deriving circuit formula and device characterization, and the effect of active Miller clamp circuit. The discussion is evaluated with the experiment.","PeriodicalId":101667,"journal":{"name":"2013 3rd IEEE CPMT Symposium Japan","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127033497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Demonstration of high-bandwidth density and low-power organic optical MCM link 高带宽密度、低功耗有机光MCM链路的演示
2013 3rd IEEE CPMT Symposium Japan Pub Date : 2013-11-01 DOI: 10.1109/ICSJ.2013.6756094
M. Tokunari, Seiji Takeda, Hsiang-Han Hsu, S. Nakagawa
{"title":"Demonstration of high-bandwidth density and low-power organic optical MCM link","authors":"M. Tokunari, Seiji Takeda, Hsiang-Han Hsu, S. Nakagawa","doi":"10.1109/ICSJ.2013.6756094","DOIUrl":"https://doi.org/10.1109/ICSJ.2013.6756094","url":null,"abstract":"The high-speed performance of polymer waveguide-based optical multi-chip module (MCM) link is demonstrated. Two optical MCMs serving as TX and RX respectively are connected by a graded-index multi-mode fiber. We integrated commercially-available 850-nm bare VCSEL and PD chips on our custom-made MCM. The link performance operates at a bitrate up to 14 Gb/s and an open eye is obtained at 20 Gb/s.","PeriodicalId":101667,"journal":{"name":"2013 3rd IEEE CPMT Symposium Japan","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115966772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Mechanical properties of Sn-58Bi, In-3Ag and SAC305 solders measured with fine diameter specimens 用细径试样测定Sn-58Bi、In-3Ag和SAC305焊料的力学性能
2013 3rd IEEE CPMT Symposium Japan Pub Date : 2013-11-01 DOI: 10.1109/ICSJ.2013.6756118
T. Hisada, I. Shohji, Yasuharu Yamada, K. Toriyama, M. Ueno
{"title":"Mechanical properties of Sn-58Bi, In-3Ag and SAC305 solders measured with fine diameter specimens","authors":"T. Hisada, I. Shohji, Yasuharu Yamada, K. Toriyama, M. Ueno","doi":"10.1109/ICSJ.2013.6756118","DOIUrl":"https://doi.org/10.1109/ICSJ.2013.6756118","url":null,"abstract":"Lead-free solders such as SnAg or SnAgCu is widely used for flip chip joining. As a result of higher melting temperature and higher elastic modulus of the lead-free solders compared to eutectic SnPb solder, defect of crack or damage in low-k dielectric layers under bond pad for flip chip joining in the semiconductor chip became a serious issue. The crack or damage is caused by mismatch of coefficient of thermal expansion (CTE) between chip and chip carrier substrate after chip join reflow. Various low melting temperature solders have been investigated and proposed as alternatives to SnAg or SnAgCu solders. Mechanical properties including creep properties are important factors as well as melting temperature for stress relief in micro joints and low-k layers. In this paper, the authors report measurement results of creep properties with fine-diameter-specimens (0.5 mm in diameter) of two low melting temperature solders (Sn-58Bi and In-3Ag) and conventional lead-free solder (Sn-3.0Ag-0.5Cu). The measurement matrix consists of four different strain rates and three different temperatures. The stress component n and the constant A in Norton's creep law were derived for each solder alloy.","PeriodicalId":101667,"journal":{"name":"2013 3rd IEEE CPMT Symposium Japan","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123778486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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