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Distribution of the density of states of bonded hydrogen in amorphous hydrogenated silicon 非晶氢化硅中键合氢态密度的分布
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90052-Q
R.A. Street
{"title":"Distribution of the density of states of bonded hydrogen in amorphous hydrogenated silicon","authors":"R.A. Street","doi":"10.1016/0379-6787(91)90052-Q","DOIUrl":"10.1016/0379-6787(91)90052-Q","url":null,"abstract":"<div><p>Hydrogen-induced metastability is analysed by a density of states distribution for bonded hydrogen, which described the alternative hydrogen sites and the effects of disorder. The metastability is explained by the redistribution of hydrogen following illumination, annealing or a shift of the Fermi energy. Hydrogen and defect equilibria are related to the hydrogen diffusion and the chemical potential. An estimate of the hydrogen density of states distribution, based on the weak bond model, is shown to be consistent with the measured defect density. Irreversible metastable changes are related to structural reconstructions which change the shape of the distribution, while the reversible changes correspond to a redistribution of hydrogen within an approximately constant density of states.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 207-218"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90052-Q","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74819083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Cost and performance sensitivity studies for solar photovoltaic/electrolytic hydrogen systems 太阳能光伏/电解氢系统的成本和性能敏感性研究
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90082-Z
Joan M. Ogden
{"title":"Cost and performance sensitivity studies for solar photovoltaic/electrolytic hydrogen systems","authors":"Joan M. Ogden","doi":"10.1016/0379-6787(91)90082-Z","DOIUrl":"10.1016/0379-6787(91)90082-Z","url":null,"abstract":"<div><p>In previous work, we have investigated the implications of projected advances in thin film solar cell technology for producing electrolytic hydrogen from photovoltaic (PV) electricity. These studies indicate that if year 2000 cost and efficiency goals for thin film solar cells are achieved, PV hydrogen produced in the Southwestern U.S. could become roughly cost competitive with other synthetic fuels for applications such as automotive transport and residential heating, if efficient energy use is stressed. This suggests that PV hydrogen could potentially play a significant role in future energy supply.</p><p>However, the estimated production cost of PV hydrogen depends on the cost and performance parameters assumed for the PV hydrogen system. In this paper we investigate the sensitivity of PV hydrogen production costs to changes in the system parameters and identify key conditions for low cost PV hydrogen production.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 515-523"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90082-Z","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89217869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Review of the application of molecular beam epitaxy for high efficiency solar cell research 分子束外延技术在高效太阳能电池研究中的应用综述
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90064-V
Michael R. Melloch
{"title":"Review of the application of molecular beam epitaxy for high efficiency solar cell research","authors":"Michael R. Melloch","doi":"10.1016/0379-6787(91)90064-V","DOIUrl":"10.1016/0379-6787(91)90064-V","url":null,"abstract":"<div><p>In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimensin <span><math><mtext>2 </mtext><mtext>cm</mtext><mtext> × 4 </mtext><mtext>cm</mtext></math></span>. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 313-321"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90064-V","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80856409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Crystallized amorphous silicon for low-cost solar cells 用于低成本太阳能电池的结晶非晶硅
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90073-X
J. Yi, R. Wallace, N. Sridhar, Z. Wang, K. Xie, D.D.L. Chung, C.R. Wie, K. Etemadi, W.A. Anderson, M. Périard, R.W. Cochrane, Y. Diawara, J.F. Currie, J. Coleman
{"title":"Crystallized amorphous silicon for low-cost solar cells","authors":"J. Yi,&nbsp;R. Wallace,&nbsp;N. Sridhar,&nbsp;Z. Wang,&nbsp;K. Xie,&nbsp;D.D.L. Chung,&nbsp;C.R. Wie,&nbsp;K. Etemadi,&nbsp;W.A. Anderson,&nbsp;M. Périard,&nbsp;R.W. Cochrane,&nbsp;Y. Diawara,&nbsp;J.F. Currie,&nbsp;J. Coleman","doi":"10.1016/0379-6787(91)90073-X","DOIUrl":"10.1016/0379-6787(91)90073-X","url":null,"abstract":"<div><p>Hydrogenated amorphous silicon (a-Si:H), 1–10 μm thick, was deposited onto stainless steel and molybdenum sheets using catholic d.c. glow discharge in a gradient field and by plasma-enhanced chemical vapor deposition. The films were subsequently crystallized by isothermal heating in N<sub>2</sub>, rapid thermal processing, isothermal annealing in vacuum (IAV) or isothermal annealing after vycor encapsulation (IAE). All techniques led to crystallization as revealed by X-ray diffraction. Annealing by IAV at 1000 °C for 7 h or IAE at 700 °C for 8 h gave the most intense (111) silicon diffraction peaks. Auger electron spectroscopy showed significant diffusion of iron into the silicon for stainless steel substrates. Energy recoil detection of as-deposited a-Si:H showed good uniformity of both silicon and hydrogen.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 403-413"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90073-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78735852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low temperature homoepitaxial growth of GaAs by dissociating trimethylgallium and trimethylarsenic in a remote hydrogen plasma 远距离氢等离子体解离三甲基镓和三甲基拉森砷的低温同外延生长
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90074-Y
B.G. Pihlstrom, L.R. Thompson, G.J. Collins
{"title":"Low temperature homoepitaxial growth of GaAs by dissociating trimethylgallium and trimethylarsenic in a remote hydrogen plasma","authors":"B.G. Pihlstrom,&nbsp;L.R. Thompson,&nbsp;G.J. Collins","doi":"10.1016/0379-6787(91)90074-Y","DOIUrl":"10.1016/0379-6787(91)90074-Y","url":null,"abstract":"<div><p>A downstream near afterglow plasma was used to deposit epitaxial GaAs at substrate temperatures as low as 300 °C. Feedstock organometallics of trimethylgallium and trimethylarsenic were employed at a ratio of 1:2, respectively. The observed growth rate varies with the substrate temperature, but no growth occurs without the plasma. Scanning electron microscopy electron backscattering was used to probe the single crystal quality of the deposited layers.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 415-418"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90074-Y","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81470743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-deposition-rate amorphous silicon solar cells: silane or disilane? 高沉积速率非晶硅太阳能电池:硅烷还是二硅烷?
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90059-X
D.S. Shen , H. Chatham , P.K. Bhat
{"title":"High-deposition-rate amorphous silicon solar cells: silane or disilane?","authors":"D.S. Shen ,&nbsp;H. Chatham ,&nbsp;P.K. Bhat","doi":"10.1016/0379-6787(91)90059-X","DOIUrl":"10.1016/0379-6787(91)90059-X","url":null,"abstract":"<div><p>We report a comparison study of high-deposition-rate (approximately 2 nm s<sup>−1</sup>) amorphous hydrogenated silicon (a-Si:H) solar cells using silane (SiH<sub>4</sub>) and disilane (Si<sub>2</sub>H<sub>6</sub>) source gases. Our results show that under optimized deposition conditions, films deposited from silane or disilane at the same deposition rate have similar properties. Efficiencies higher than 10% have been achieved in both cases for 1 cm<sup>2</sup> area single-junction solar cells. The key for achieving high efficiency, high-deposition-rate, solar cells using SiH<sub>4</sub> source gas is the p-i interface.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 271-275"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90059-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88290842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
CuInSe2 module environmental reliability CuInSe2模块环境可靠性
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90086-5
Dale E. Tarrant, Robert R. Gay, Jean J. Hummel, Cynthia Jensen, Al R. Ramos
{"title":"CuInSe2 module environmental reliability","authors":"Dale E. Tarrant,&nbsp;Robert R. Gay,&nbsp;Jean J. Hummel,&nbsp;Cynthia Jensen,&nbsp;Al R. Ramos","doi":"10.1016/0379-6787(91)90086-5","DOIUrl":"10.1016/0379-6787(91)90086-5","url":null,"abstract":"<div><p>Environmental testing data are presented and discussed in relation to the suitability of CuInSe<sub>2</sub> (CIS) as a durable photovoltaic material and to the Interim Qualification Tests and Procedures for Terrestrial Photovoltaic Thin-Film Flat-Plate Modules (IQTP). Groups of modules having no significant change after ten humidity-freeze cycles are reported. Heating during module packaging or during environmental testing to temperatures above those normally encountered by modules in outdoor service may introduce a temporary power loss; the power recovers with time to near the initial power. Data indicate that temperature alone, rather than temperature combined with humidity, causes the temporary power loss and that CIS is not inherently sensitive to humidity. Hermetic seals are not in general necessary for CIS materials. The IQTP may improperly indicate poor performance if the temporary power loss is not considered in electrical performance testing between different sections of the environmental test procedures and at the end of all environmental tests. Data are not available to validate accelerated testing as a means of predicting long-term in-service performance; however, correlations between outdoor and accelerated testing are seen.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 549-557"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90086-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74230222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Solarex experience with ethylene vinyl acetate encapsulation Solarex的乙烯醋酸乙烯封装经验
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90071-V
John H. Wohlgemuth, Raymond C. Petersen
{"title":"Solarex experience with ethylene vinyl acetate encapsulation","authors":"John H. Wohlgemuth,&nbsp;Raymond C. Petersen","doi":"10.1016/0379-6787(91)90071-V","DOIUrl":"10.1016/0379-6787(91)90071-V","url":null,"abstract":"<div><p>Solarex began using ethylene vinyl acetate (EVA) as an encapsulant for photovoltaic modules during the Jet Propulsion Laboratory sponsored Block IV Program in 1979. Experience was gained in the processing and use of EVA during a number of Department of Energy sponsored projects through the early 1980s. In 1982 Solarex began using EVA in commercial modules and has continued to use it up to the present time. EVA has proven to be a highly reliable encapsulant, with no reported instances of Solarex module field failures being attributed to failure of the EVA encapsulant. The EVA encapsulation system is complex, requiring well controlled manufacture of the film itself and the correct lamination procedure to assure adequate cure and bonding to the glass, cell and backsheet surfaces. The initial Springborn work on EVA included accelerated testing, which indicated that at temperatures considerably higher than experienced during normal module operation, the EVA system will suffer thermally induced degradation. However, no major degradation was experienced under normal operating conditions during either Springborn's testing or Solarex's 10 years of field experience.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 383-387"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90071-V","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89205826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Defect equilibration and metastability in low-spin-density amorphous hydrogenated silicon 低自旋密度非晶氢化硅的缺陷平衡和亚稳态
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90055-T
T.J. McMahon
{"title":"Defect equilibration and metastability in low-spin-density amorphous hydrogenated silicon","authors":"T.J. McMahon","doi":"10.1016/0379-6787(91)90055-T","DOIUrl":"10.1016/0379-6787(91)90055-T","url":null,"abstract":"<div><p>Electron spin resonance was used to characterize concentrations of thermal equilibrium defects from room temperature to 280 °C in a 60 μm thick hydrogenated amorphous silicon film. A defect formation energy of 0.35 eV was found in material with <span><math><mtext>1×10</mtext><msup><mi></mi><mn>15</mn></msup><mtext>cm</mtext><msup><mi></mi><mn>−3</mn></msup></math></span> spins at 190 °C. Annealing of defects quenched in from 250 °C revealed an activation energy of 2.2 eV. Annealings at 150 °C of defects quenched in at 250 °C and 190 °C were compared; the additional defects introduced at the higher temperature annealed 10 times faster, supporting a model in which metastable states with higher formation energies have smaller annealing activation energies. Light-induced defects are described in terms of a very “high-temperature” distribution similar to that which might be quenched in as a result of <span><math><mtext>kT ≈ 0.5 </mtext><mtext>eV</mtext></math></span>.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 235-243"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90055-T","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88900838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Overview of amorphous silicon photovoltaic module development 非晶硅光伏组件发展综述
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90060-3
D.E. Carlson
{"title":"Overview of amorphous silicon photovoltaic module development","authors":"D.E. Carlson","doi":"10.1016/0379-6787(91)90060-3","DOIUrl":"10.1016/0379-6787(91)90060-3","url":null,"abstract":"<div><p>Amorphous silicon (a-Si) photovoltaic (PV) modules are generally manufactured in a single-junction p-i-n configuration and in sites ranging from a few square centimeters to about 4000 cm<sup>2</sup>. These modules are being used in a number of both indoor and outdoor low wattage (less than 20 W<sub>p</sub> (peak watt)) applications, but have not found widespread use in most higher wattage power applications owing to relatively low stabilized conversion efficiencies (approximately 4%–5%). The recent improvements in the performance and stability of a-Si based multijunction modules indicates that these modules should soon start to appear in the higher wattage outdoor applications. When multijunction modules are manufactured in totally automated facilities, the manufacturing costs should fall below $1 per W<sub>p</sub>, and these modules should then start penetrating the grid-connected power generation markets.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 277-283"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90060-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88821704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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