Applications of Surface Science最新文献_第2页

Surface enrichment in hot-dipped metallic coatings investigated by Auger electron spectroscopy 用俄歇能谱研究热浸金属涂层的表面富集

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90055-8

R. Payling, P.D. Mercer

引用次数: 3

Advances in characterizing and controlling metal-semiconductor interfaces 金属-半导体界面表征与控制研究进展

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90228-4

L.J. Brillson

引用次数: 1

Solution deposition of thin solid compound films by a successive ionic-layer adsorption and reaction process 通过连续离子层吸附和反应过程制备固体复合薄膜

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90241-7

Y.F. Nicolau

引用次数: 360

Geometrical and electronic structure of multiple surface phases: Iodine on Ni{100} 多表面相的几何和电子结构:Ni{100}上的碘

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90077-7

D.P. Woodruff

{"title":"Geometrical and electronic structure of multiple surface phases: Iodine on Ni{100}","authors":"D.P. Woodruff","doi":"10.1016/0378-5963(85)90077-7","DOIUrl":"10.1016/0378-5963(85)90077-7","url":null,"abstract":"<div>The existence of several surface phases formed by the adsorption of iodine on Ni{100} has been established using qualitative LEED, thermal desorption and Auger electron spectroscopy, and models have been proposed for these structures on the basis of data from these techniques. In particular, two different phases can be found at room temperature, a c(2 × 2) chemisorbed phase and an incommensurate structure identified as a slightly distorted single sandwich layer of NiI2. Heating of either of these phases leads to some desorption and the formation of a variable-sized centred rectangular mesh chemisorbed phase characterized by varying iodine- iodine repulsive energies. More recent data obtained using surface EXAFS and angle-resolved core and valence level photoemission confirm the structural assignment for the surface iodide and show its electronic structure to be essentially that expected of bulk NiI2. Studies of core level binding energy changes as seen in photoemission in the range of chemisorbed structures are discussed, and are interpreted as indicating that the Ni-I bond in this system is essentially covalent with the I-I repulsion resulting from roughly equal contributions from through metal and through space interactions.</div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 459-468"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90077-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75585944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Chemisorptive bonding of carbon monoxide on Ni(001) and Fe(110) 一氧化碳在Ni(001)和Fe(110)上的化学吸附键

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90074-1

Thor N. Rhodin, Min-Hsiung Tsai, Robert V. Kasowski

引用次数: 0

The solution-metal interface: The preparation of, characterization of, and reactions at clean metal surfaces 溶液-金属界面:清洁金属表面的制备、表征和反应

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90240-5

I.M. Ritchie

引用次数: 1

Are thin film physical structures fractals? 薄膜物理结构是分形的吗?

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90190-4

Joseph E. Yehoda, Russell Messier

引用次数: 44

Native defects at the Si/SiO2 interface-amorphous silicon revisited 重新研究了Si/SiO2界面非晶硅的原生缺陷

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90220-X

D.K. Biegelsen, N.M. Johnson, M. Stutzmann, E.H. Poindexter, P.J. Caplan

{"title":"Native defects at the Si/SiO2 interface-amorphous silicon revisited","authors":"D.K. Biegelsen, N.M. Johnson, M. Stutzmann, E.H. Poindexter, P.J. Caplan","doi":"10.1016/0378-5963(85)90220-X","DOIUrl":"10.1016/0378-5963(85)90220-X","url":null,"abstract":"<div>We review here work which demonstrates that silicon dangling bonds, Si3, are the predominant, electrically active deep states associated with the clean crystalline silicon/amorphous SiO2 interface. Si3 exists in three charge states in the silicon band gap with <math><mtext>E</mtext><msub><mi></mi><mn><mtext>+,0 ⋍ E</mtext><msub><mi></mi><mn><mtext>v</mtext></mn></msub><mtext> + 0.3 </mtext><mtext>eV</mtext></mn></msub></math> and <math><mtext>E</mtext><msub><mi></mi><mn>0,−</mn></msub><mtext> ⋍ E</mtext><msub><mi></mi><mn><mtext>v</mtext></mn></msub><mtext> + 0.9 </mtext><mtext>eV</mtext></math>, where E represents a demarcation level between charge states. We discuss the structural and electronic characteristics of Si3 at the Si/SiO2 interface, including degree of charge localization, effective correlation energies, role of hydrogen passivation, etc. We argue, from the strongly analogous behavior in amorphous silicon, that the electronic density of states in the gap is dominated by the characteristic effects of disorder in covalently bonded semiconductors. The states consist of two topologically distinct entities: distorted, fully-bonded network configurations giving rise to shallow silicon band tails, and three-fold coordinated, amphoteric silicon defects.</div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 879-890"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90220-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88526614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 18

Epitaxial growth mechanism of chlorinated copper phthalocyanine on KCl surfaces 氯化酞菁铜在KCl表面的外延生长机理

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90188-6

Yoshio Saito

引用次数: 10

Concentration/depth profiling and wear resistance of nitrogen implanted steels 氮注入钢的浓度/深度分布和耐磨性

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90044-3

J.T.A. Pollock, M.D. Scott, M.J. Kenny, P.J.K. Paterson, C.J. Veitch

引用次数: 1