Digest of technical papers. SID International Symposium最新文献

筛选
英文 中文
83‐3: Electron Transportation Engineering for Record High External Quantum Efficiency of 16.8% for Quantum Rod Light‐Emitting Diodes 83‐3:量子棒发光二极管记录高外量子效率16.8%的电子传输工程
Digest of technical papers. SID International Symposium Pub Date : 2023-06-01 DOI: 10.1002/sdtp.16783
Kumar Mallem, M. Prodanov, Zebing Liao, C. Kang, V. Vashchenko, A. Srivastava
{"title":"83‐3: Electron Transportation Engineering for Record High External Quantum Efficiency of 16.8% for Quantum Rod Light‐Emitting Diodes","authors":"Kumar Mallem, M. Prodanov, Zebing Liao, C. Kang, V. Vashchenko, A. Srivastava","doi":"10.1002/sdtp.16783","DOIUrl":"https://doi.org/10.1002/sdtp.16783","url":null,"abstract":"The semiconductor quantum rods (QRs) offer unique benefits that differ from the spherical QDs, such as linearly polarized light and higher light outcoupling efficiency, which can double the external quantum efficiency of the light‐emitting diodes (LEDs). Despite having many potential advantages, the QRs are not well explored as QDs in electroluminescent LEDs. In this work, we synthesized CdSe/CdS QRs and verified them in QR‐based LEDs. The charge injection into the QRLEDs is precisely controlled to get the maximum charge balance in the device to improve the device's efficiency. We achieved an EQE of 16.8 %, which is the highest EQE reported for QRLEDs. The turn‐on voltage, peak luminance, and current efficiency (CE) of the QRLEDs are 2.2 V, 10000 cd/m2, and 11.6 %, respectively. The electron injection does not influence the device turn‐on voltage but severely impacts the QRLEDs brightness, EQE and CE. The spin coated QRs film has small voids on the surface, which needs to be optimized further to improve the QRLEDs efficiency. Overall, these findings have insightful information on QRLEDs fabrication, which can open up a new opportunity for device applications.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48167682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
48‐1: Invited Paper: Oxide Semiconductor Thin‐Film Transistors with Deep Submicron Channel Fabricated with Hyperlithography 48‐1:邀请论文:用Hyperlithography制造的具有深亚微米沟道的氧化物半导体薄膜晶体管
Digest of technical papers. SID International Symposium Pub Date : 2023-06-01 DOI: 10.1002/sdtp.16653
Chih‐Feng Sung, Sooji Nam, S. Cho
{"title":"48‐1: Invited Paper: Oxide Semiconductor Thin‐Film Transistors with Deep Submicron Channel Fabricated with Hyperlithography","authors":"Chih‐Feng Sung, Sooji Nam, S. Cho","doi":"10.1002/sdtp.16653","DOIUrl":"https://doi.org/10.1002/sdtp.16653","url":null,"abstract":"We propose and present in detail the new method to enable the deep submicron channel length in oxide semiconductor thin‐film transistors with conventional lithographic tool in large‐area substrates. Up till now we succeeded in fabricating the oxide thin‐ film transistors with 60 nm channel length with the performance of ~300 µA/µm at a drain bias of 1.5 V, and gate bias of 2 V, ION/IOFF larger than 109, subthreshold swing of 100 mV/dec, and turn‐on voltage of about ‐0.47 V . We hope that our technique will contribute to open a new era as a backplane technology for transparent ultra‐high‐resolution displays such as hologram, AR, and/or XR.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48272582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
30‐2: Late‐News Paper: LED Outdoor Display ‐ the new advertising column ‐ challenges and requirements 30‐2:晚报:LED户外显示屏—新型广告栏目—挑战与要求
Digest of technical papers. SID International Symposium Pub Date : 2023-06-01 DOI: 10.1002/sdtp.16582
Gunnar Grieser
{"title":"30‐2: Late‐News Paper: LED Outdoor Display ‐ the new advertising column ‐ challenges and requirements","authors":"Gunnar Grieser","doi":"10.1002/sdtp.16582","DOIUrl":"https://doi.org/10.1002/sdtp.16582","url":null,"abstract":"As a distributer of messages, advertisement, and governmental information, Stroeer is forced transport them on higher quality displays with lower distance to the people. The selection of solutions is challenging as we need to adapt products to be outdoor capable, viewing distances and viewing angles to an outdoor user experience.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47388209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
12‐3: Invited Paper: Nanowire Micro‐LEDs for Augmented Reality and Virtual Reality (AR/VR) Displays 12‐3:邀请论文:用于增强现实和虚拟现实(AR/VR)显示的纳米线微型led
Digest of technical papers. SID International Symposium Pub Date : 2023-06-01 DOI: 10.1002/sdtp.16510
A. Pandey, Y. Malhotra, M. Reddeppa, Y. Xiao, Y. Wu, P. Wang, X. Liu, J. Min, Y. Sun, S. Coe‐Sullivan, Z. Mi
{"title":"12‐3: Invited Paper: Nanowire Micro‐LEDs for Augmented Reality and Virtual Reality (AR/VR) Displays","authors":"A. Pandey, Y. Malhotra, M. Reddeppa, Y. Xiao, Y. Wu, P. Wang, X. Liu, J. Min, Y. Sun, S. Coe‐Sullivan, Z. Mi","doi":"10.1002/sdtp.16510","DOIUrl":"https://doi.org/10.1002/sdtp.16510","url":null,"abstract":"We report on high efficiency InGaN nanowire‐based micro and \u0000nanoscale light emitting diodes (LEDs). We show that record‐ \u0000high efficiency and highly directional emissions can be achieved \u0000with red and green submicron nanowire micro‐LEDs. Such LEDs \u0000are critical for augmented reality displays which require both \u0000efficiency and high optical throughput.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48825459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
P‐149: Late‐News Poster: Effective Approach to Failure Analysis of IC‐embedded OLED Display Device P‐149:后期新闻海报:集成电路嵌入式OLED显示器件失效分析的有效方法
Digest of technical papers. SID International Symposium Pub Date : 2023-06-01 DOI: 10.1002/sdtp.16867
Hoseok Song, Ki-Jong Lee, Youngmyung Hong, Jun-Hyuck Choi, Yong H. Lee
{"title":"P‐149: Late‐News Poster: Effective Approach to Failure Analysis of IC‐embedded OLED Display Device","authors":"Hoseok Song, Ki-Jong Lee, Youngmyung Hong, Jun-Hyuck Choi, Yong H. Lee","doi":"10.1002/sdtp.16867","DOIUrl":"https://doi.org/10.1002/sdtp.16867","url":null,"abstract":"With conventional methodologies and workflow in the failure analysis (FA) of display device, the result of FA was not clear enough to identify the defect source because it had been removed or deformed during PFA work. Therefore, new methodologies and workflow were proposed to resolve the limitations of current ones. This study with actual FA works of display failures like abnormal display failure and vertical line display failure, verified that the FA of display failure at module level successfully identified the source of defectivity without its alteration during PFA work. New methodologies and workflow would contribute to clear identification of failure source so that it gives feedback into inline, followed by improvement actions.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49049790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
17‐3: An 8.3‐inch 1058‐ppi OLED Display with Side‐by‐Side Pixel Structure Fully Fabricated by Photolithography 17‐3:一个8.3英寸1058 ppi的OLED显示器,具有完全由光刻技术制造的并排像素结构
Digest of technical papers. SID International Symposium Pub Date : 2023-06-01 DOI: 10.1002/sdtp.16527
S. Eguchi, Takayuki Oide, Sho Kato, A. Chida, Koji Kusunoki, Yasutaka Nakazawa, Satoru Idojiri, K. Okazaki, S. Yamazaki
{"title":"17‐3: An 8.3‐inch 1058‐ppi OLED Display with Side‐by‐Side Pixel Structure Fully Fabricated by Photolithography","authors":"S. Eguchi, Takayuki Oide, Sho Kato, A. Chida, Koji Kusunoki, Yasutaka Nakazawa, Satoru Idojiri, K. Okazaki, S. Yamazaki","doi":"10.1002/sdtp.16527","DOIUrl":"https://doi.org/10.1002/sdtp.16527","url":null,"abstract":"We developed a patterning technology via photolithography \u0000that does not use a fine metal mask to achieve high resolution \u0000for all RGB pixels. An 8.3‐inch 1058‐ppi organic light‐\u0000emitting diode (OLED) display was prototyped using the \u0000technology for an oxide semiconductor backplane over a \u0000glass substrate. Having no restriction on alignment accuracy, \u0000metal mask washing, running costs, etc. in the \u0000manufacturing process of medium‐ or large‐sized OLED \u0000displays, this technology holds promise for enabling the mass \u0000production.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49059134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
36‐3: Design and Analysis of Brightness enhancement Integral Imaging Based 3D Light‐Field Normal Display and Optical See‐Through Light‐Field Display by Discrete Lenslet Array 36‐3:基于离散透镜阵列的亮度增强积分成像三维光场正常显示和光学透视光场显示的设计与分析
Digest of technical papers. SID International Symposium Pub Date : 2023-06-01 DOI: 10.1002/sdtp.16608
Chia-Yuan Chang, H. Lin
{"title":"36‐3: Design and Analysis of Brightness enhancement Integral Imaging Based 3D Light‐Field Normal Display and Optical See‐Through Light‐Field Display by Discrete Lenslet Array","authors":"Chia-Yuan Chang, H. Lin","doi":"10.1002/sdtp.16608","DOIUrl":"https://doi.org/10.1002/sdtp.16608","url":null,"abstract":"We want to create a floating projection with integral imaging based 3D light field normal display and with an optical see‐through display. Using the Computer Generated Elemental Image (CGEI) method to create an image with a different depth from a two‐dimensional image and depth map. We create a new weight function instead of using the previous one from the previous paper in the same method. Also, creating an optical see‐through light‐field display by using a discrete lenslet array. Finally, we created naked 3D with brighter information and realize floating projection effect with a see‐through display.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44285140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
32‐4: Late‐News Paper: A 1.03‐inch 2560x2560 3514 PPI Low Power OLEDoS Backplane with In‐pixel Up‐scaling Technique 32‐4:Late - News Paper: 1.03英寸2560x25603514 PPI低功耗oled背板与In - pixel上缩放技术
Digest of technical papers. SID International Symposium Pub Date : 2023-06-01 DOI: 10.1002/sdtp.16593
Dongsoon Jung, Ara Cho, Hokwon Kim, M. Jeong, Jeong Hwan Lee
{"title":"32‐4: Late‐News Paper: A 1.03‐inch 2560x2560 3514 PPI Low Power OLEDoS Backplane with In‐pixel Up‐scaling Technique","authors":"Dongsoon Jung, Ara Cho, Hokwon Kim, M. Jeong, Jeong Hwan Lee","doi":"10.1002/sdtp.16593","DOIUrl":"https://doi.org/10.1002/sdtp.16593","url":null,"abstract":"A 1.03‐inch 2560x2560 low power OLEDoS backplane with a \u0000proposed in‐pixel up‐scaling technique is designed and \u0000implemented. Due to the proposed technique based on \u0000interpolated pixel scheme, the pixel density of the backplane \u0000realizes 3514 PPI (Pixels per Inch) with lower power \u0000consumption. The backplane has 1280x1280 input video \u0000resolution and output video resolution is upscaled to 2560x2560 \u0000without additional up‐scaler. A measured power consumption per \u00001 mega pixel without OLED frontplane is 16.3mW which is less \u0000than our previous 0.7‐inch 1920x1080 OLEDoS backplane with \u0000the same semiconductor fabrication process.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41614114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
89‐1: Usability of Glove‐based Handling Devices in Virtual Training: Use Case in Automotive Sector 89‐1:虚拟训练中基于手套的处理设备的可用性:汽车行业的用例
Digest of technical papers. SID International Symposium Pub Date : 2023-06-01 DOI: 10.1002/sdtp.16807
Sara Buonocore, Alessandro Guerra, Marcello Benincasa, V. Minopoli, G. Gironimo
{"title":"89‐1: Usability of Glove‐based Handling Devices in Virtual Training: Use Case in Automotive Sector","authors":"Sara Buonocore, Alessandro Guerra, Marcello Benincasa, V. Minopoli, G. Gironimo","doi":"10.1002/sdtp.16807","DOIUrl":"https://doi.org/10.1002/sdtp.16807","url":null,"abstract":"This work analyzes the impact of subjective factors on users’ immersive experience, while using glove‐based handling devices as input system. A user‐study has been conducted on a Virtual Training framework, evaluating usability and mental effort perceived with such devices.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42111209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
25‐1: Distinguished Paper: A Novel Ultra Large Size OLED Display for Premium TVs 25-1:杰出论文:一种用于高级电视的新型超大尺寸OLED显示器
Digest of technical papers. SID International Symposium Pub Date : 2023-06-01 DOI: 10.1002/sdtp.16559
Hong-Jae Shin, Soo-Hong Choi, Yong‐Ho Kim, Seong-Ho Yun, Dong-Myoung Kim, Sung‐Joon Bae, Han‐Seop Kim, H. Lee, Chang‐ho Oh
{"title":"25‐1: Distinguished Paper: A Novel Ultra Large Size OLED Display for Premium TVs","authors":"Hong-Jae Shin, Soo-Hong Choi, Yong‐Ho Kim, Seong-Ho Yun, Dong-Myoung Kim, Sung‐Joon Bae, Han‐Seop Kim, H. Lee, Chang‐ho Oh","doi":"10.1002/sdtp.16559","DOIUrl":"https://doi.org/10.1002/sdtp.16559","url":null,"abstract":"In this paper, we present the novel ultra large size OLED display with high image quality for premium TV using an advanced coplanar Oxide TFT backplane, MLA based OLED, small area gate driver in panel for narrow bezel, and pixel charging enhancement method with external compensation. Using these technologies, we improved the luminance efficiency about 20 %, and reduced the gate driver design area to 40%. The pixel charging ratio is more than 80% in all gray levels. Using the developed OLED display, we have successfully developed up to ultra large size 88‐inch 8K, 97‐inch 4K OLED TVs.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41934930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书