Physica status solidi. B, Basic solid state physics : PSS最新文献

Eutectic Formation, V/III Ratio and Controlled Polarity Inversion in Nitrides on Silicon^[1]. 硅[1]表面氮化物的共晶形成、V/III比和可控极性反转。

Physica status solidi. B, Basic solid state physics : PSS Pub Date : 2019-01-01 DOI: 10.1002/pssb.201900611

Alexana Roshko, Matt D Brubaker, Paul T Blanchard, Todd E Harvey, Kris A Bertness

{"title":"Eutectic Formation, V/III Ratio and Controlled Polarity Inversion in Nitrides on Silicon[1].","authors":"Alexana Roshko, Matt D Brubaker, Paul T Blanchard, Todd E Harvey, Kris A Bertness","doi":"10.1002/pssb.201900611","DOIUrl":"10.1002/pssb.201900611","url":null,"abstract":"The crystallographic polarity of AlN grown on Si(111) by plasma assisted molecular beam epitaxy is intentionally inverted from N-polar to Al-polar at a planar boundary. The position of the inversion boundary is controlled by a two-step growth process that abruptly changes from Al-rich to N-rich growth conditions. The polarity inversion is induced by the presence of Si, which is incorporated from an Al-Si eutectic layer that forms during the initial stages of AlN growth and floats on the AlN surface under Al-rich growth conditions. When the growth conditions change to N-rich the Al and Si in the eutectic react with the additional N-flux and are incorporated into the solid AlN film. Relatively low levels of Al-Si eutectic formation combined with lateral variations in the Si incorporation lead to nonuniformity in the polarity inversion and formation of surprisingly narrow, vertical inversion domains. The results suggest that intentional incorporation of uniform layers of Si may provide a method for producing polarity engineered nitride structures.","PeriodicalId":90039,"journal":{"name":"Physica status solidi. B, Basic solid state physics : PSS","volume":"257 ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/pssb.201900611","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"38726609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Bi₂Se₃ van der Waals Virtual Substrates for II-VI Heterostructures. 用于 II-VI 异质结构的 Bi2Se3 范德瓦耳斯虚拟基底。

Physica status solidi. B, Basic solid state physics : PSS Pub Date : 2017-11-01 Epub Date: 2017-08-28 DOI: 10.1002/pssb.201700275

Thor Axtmann Garcia, Vasilios Deligiannakis, Candice Forrester, Ido Levy, Maria C Tamargo

{"title":"Bi2Se3 van der Waals Virtual Substrates for II-VI Heterostructures.","authors":"Thor Axtmann Garcia, Vasilios Deligiannakis, Candice Forrester, Ido Levy, Maria C Tamargo","doi":"10.1002/pssb.201700275","DOIUrl":"10.1002/pssb.201700275","url":null,"abstract":"We report on the growth and characterization of optical quality multiple quantum well structures of Zn x Cd1-x Se/Zn x Cd y Mg1-x-y Se on an ultra-thin Bi2Se3/CdTe virtual substrate on c-plane Al2O3 (sapphire). Excellent quality highly oriented films grown along the (111) direction were achieved as evidenced by reflection high energy electron diffraction and X-ray diffraction studies. We also observed room temperature and 77 K photoluminescence emission with peak energies at 77 K of 2.407 eV and linewidths of 56 meV comparable to those achieved on structures grown on InP. Exfoliation of the structures is also possible due to the van der Waals bonding of Bi2Se3. Exfoliated (substrate free) films exhibit photoluminescence emission nearly identical to that of the supported film. Additionally, contactless electroreflectance measurements show good agreement with simulations of the multiple quantum well structure as well as evidence of excited state levels. These results open new avenues of research for substrate independent epitaxy and the possibility of ultra-thin electronics.","PeriodicalId":90039,"journal":{"name":"Physica status solidi. B, Basic solid state physics : PSS","volume":"254 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5697755/pdf/nihms916667.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"35639665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon. 在图案化（113）硅上生长的低缺陷大面积半极性（11[式：见正文]2）氮化镓。

Physica status solidi. B, Basic solid state physics : PSS Pub Date : 2014-12-09 eCollection Date: 2015-05-01 DOI: 10.1002/pssb.201451591

Markus Pristovsek, Yisong Han, Tongtong Zhu, Martin Frentrup, Menno J Kappers, Colin J Humphreys, Grzegorz Kozlowski, Pleun Maaskant, Brian Corbett

{"title":"Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.","authors":"Markus Pristovsek, Yisong Han, Tongtong Zhu, Martin Frentrup, Menno J Kappers, Colin J Humphreys, Grzegorz Kozlowski, Pleun Maaskant, Brian Corbett","doi":"10.1002/pssb.201451591","DOIUrl":"10.1002/pssb.201451591","url":null,"abstract":"We report on the growth of semi-polar GaN (11[Formula: see text]2) templates on patterned Si (113) substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls. Subsequently an AlN layer to prevent meltback etching, an AlGaN layer for stress management, and finally two GaN layers were deposited. Total thicknesses up to 5 [Formula: see text]m were realised without cracks in the layer. Transmission electron microscopy showed that most dislocations propagate along [0001] direction and hence can be covered by overgrowth from the next trench. The defect densities were below [Formula: see text] and stacking fault densities less than 100 cm [Formula: see text]. These numbers are similar to reports on patterned r-plane sapphire. Typical X-ray full width at half maximum (FHWM) were 500\" for the asymmetric (00.6) and 450\" for the (11.2) reflection. These FHWMs were 50 % broader than reported for patterned r-plane sapphire which is attributed to different defect structures and total thicknesses. The surface roughness shows strong variation on templates. For the final surface roughness the roughness of the sidewalls of the GaN ridges at the time of coalescence are critical.","PeriodicalId":90039,"journal":{"name":"Physica status solidi. B, Basic solid state physics : PSS","volume":"252 5","pages":"1104-1108"},"PeriodicalIF":0.0,"publicationDate":"2014-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/pssb.201451591","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"33937263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 15

The influence of the structure of the Au(110) surface on the ordering of a monolayer of cytochrome P450 reductase at the Au(110)/phosphate buffer interface Au(110)表面结构对Au(110)/磷酸盐缓冲界面细胞色素P450还原酶单层有序性的影响

Physica status solidi. B, Basic solid state physics : PSS Pub Date : 2014-03-01 DOI: 10.1002/pssb.201350063

C. I. Smith, J. H. Convery, B. Khara, N. Scrutton, P. Weightman

{"title":"The influence of the structure of the Au(110) surface on the ordering of a monolayer of cytochrome P450 reductase at the Au(110)/phosphate buffer interface","authors":"C. I. Smith, J. H. Convery, B. Khara, N. Scrutton, P. Weightman","doi":"10.1002/pssb.201350063","DOIUrl":"https://doi.org/10.1002/pssb.201350063","url":null,"abstract":"The reflection anisotropy spectra (RAS) observed initially from Au(110)/phosphate buffer interfaces at applied potentials of −0.652 and 0.056 V are very similar to the spectra observed from ordered Au(110) (1 × 3) and anion induced (1 × 1) surface structures respectively. These RAS profiles transform to a common profile after cycling the potential between these two values over 72 h indicating the formation of a less ordered surface. The RAS of a monolayer of a P499C variant of the human flavoprotein cytochrome P450 reductase adsorbed at 0.056 V at an ordered Au(110)/phosphate buffer interface is shown to arise from an ordered layer in which the optical dipole transitions are in a plane that is orientated roughly normal to the surface and parallel to either the [11¯0] or [001] axes of the Au(110) surface. The same result was found previously for adsorption of P499C on an ordered interface at −0.652 V. The adsorption of P499C at the disordered surface does not result in the formation of an ordered monolayer confirming that the molecular ordering is strongly influenced by both the local structure and the long range macroscopic order of the Au(110) surface.","PeriodicalId":90039,"journal":{"name":"Physica status solidi. B, Basic solid state physics : PSS","volume":"1 1","pages":"549 - 554"},"PeriodicalIF":0.0,"publicationDate":"2014-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79713249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Approaching an organic semimetal: Electron pockets at the Fermi level for a p-benzoquinonemonoimine zwitterion. 接近有机半金属：对苯醌柠檬亚胺齐聚物在费米级的电子袋。

Physica status solidi. B, Basic solid state physics : PSS Pub Date : 2012-08-01 DOI: 10.1002/pssb.201147426

Luis G Rosa, Julian Velev, Zhengzheng Zhang, Jose Alvira, Omar Vega, Gerson Diaz, Lucie Routaboul, Pierre Braunstein, Bernard Doudin, Yaroslav B Losovyj, Peter A Dowben

引用次数: 0