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Studying the Effect of a Thermocouple Contact with the Surface of a Thin Sample with Low Thermal Conductivity on the Accuracy of Temperature Determination 研究热电偶与低导热率薄型样品表面的接触对温度测定精度的影响
IF 0.8 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-06-03 DOI: 10.1134/S1063785024700305
A. A. Fefelov, A. N. Chuvilin
{"title":"Studying the Effect of a Thermocouple Contact with the Surface of a Thin Sample with Low Thermal Conductivity on the Accuracy of Temperature Determination","authors":"A. A. Fefelov,&nbsp;A. N. Chuvilin","doi":"10.1134/S1063785024700305","DOIUrl":"10.1134/S1063785024700305","url":null,"abstract":"<p>The issue of the actually achieved measurement temperature accuracy of samples of materials used for fabricating printed circuit board bases using the contact method is considered. The purpose of the work is to estimate the error in measuring the temperature of the sample surface caused by the temperature field distortion when a thermocouple probe is brought into contact with the surface. Numerical simulation of the temperature distribution in the sample before and after its contact with the thermocouple probe is carried out. The effect of the thermal conductivity of a sample and the contact area of a thermocouple with the sample on the temperature measurement error is studied. The possibility of increasing the accuracy of temperature measurements by the contact method by introducing a thermal interface in the form of a heat-conducting paste into the contact area is discussed.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"50 1","pages":"58 - 62"},"PeriodicalIF":0.8,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141252654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Destruction of Commercially Pure Lead in Process Creep in a Constant Magnetic Field 恒定磁场中工艺蠕变对商用纯铅的破坏
IF 0.8 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-06-03 DOI: 10.1134/S1063785024700342
A. A. Serebryakova, V. V. Shlyarov, D. V. Zaguliaev, V. E. Gromov
{"title":"Destruction of Commercially Pure Lead in Process Creep in a Constant Magnetic Field","authors":"A. A. Serebryakova,&nbsp;V. V. Shlyarov,&nbsp;D. V. Zaguliaev,&nbsp;V. E. Gromov","doi":"10.1134/S1063785024700342","DOIUrl":"10.1134/S1063785024700342","url":null,"abstract":"<p>Mechanical tests of commercially pure lead grade C2 were carried out, cylindrical samples of lead were destroyed in the process of creep with a constant tensile force. The tests were carried out initially without the inclusion of a magnetic field during deformation, then with the inclusion of a magnetic field with an induction of 0.5 T. Based on the data obtained, characteristic curves of the creep process were constructed. A change in the nature of the curve is revealed. At the discovered linear stage of the process, the creep rate was calculated. A decrease in the creep rate is shown compared to the process without the action of an external magnetic field. The duration of the creep process is analyzed depending on the induction and the percentage of residual relative elongation of the samples. Analysis of the fractograms showed a difference in the morphology of fractures in the studied samples. With the use of a magnetic field during the destruction of the sample, the number of pits on the surface decreased, the fibrous zone increased, and the fracture morphology changed.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"50 1","pages":"78 - 82"},"PeriodicalIF":0.8,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141252433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Superconducting Matching Circuits for an Oscillator and an SIS Mixer in the Subterahertz Frequency Range 用于亚赫兹频率范围振荡器和 SIS 混频器的超导匹配电路
IF 0.8 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-06-03 DOI: 10.1134/S1063785024700330
A. A. Atepalikhin, F. V. Khan, L. V. Filippenko, V. P. Koshelets
{"title":"Superconducting Matching Circuits for an Oscillator and an SIS Mixer in the Subterahertz Frequency Range","authors":"A. A. Atepalikhin,&nbsp;F. V. Khan,&nbsp;L. V. Filippenko,&nbsp;V. P. Koshelets","doi":"10.1134/S1063785024700330","DOIUrl":"10.1134/S1063785024700330","url":null,"abstract":"<p>At present, microwave transmission lines are characterized by a strong frequency dependence of loss in the subterahertz range. This work is aimed at development, research, and optimization of superconducting integrated circuits designed for matching the impedances of a long Josephson junction oscillator (a so-called “flux-flow oscillator”) and a superconductor–insulator–superconductor (SIS) detector in the subterahertz frequency range. The goal of this study is to improve and approve the numerical calculation methods, which make it possible to describe correctly experimental superconducting structures in a wide frequency range. Numerical calculations of integrated circuits have been performed in order to optimize the topology and parameters of transmission lines. The main parameters of the transmission lines and their influence on the signal propagation are determined. The results of optimization of integrated matching circuits in the range of 450–700 GHz have been experimentally confirmed. Optimization and improvement of transmission lines allow one to design new-generation integrated superconducting detectors and investigate tunnel SIS junctions more thoroughly (including shunted ones) and the properties of heterodyne oscillators based on long Josephson junctions.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"50 1","pages":"75 - 77"},"PeriodicalIF":0.8,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141252477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the Effect of the Melt Cooling Rate upon Spinning on the Structure of the Surface Layers of Fe77Ni1Si9B13 Alloy Ribbons 纺丝时熔体冷却速率对 Fe77Ni1Si9B13 合金带表面层结构的影响
IF 0.8 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-28 DOI: 10.1134/S1063785024700184
V. I. Lad’yanov, M. S. Konovalov, M. I. Mokrushina, A. I. Shilyaev, D. P. Ardasheva
{"title":"On the Effect of the Melt Cooling Rate upon Spinning on the Structure of the Surface Layers of Fe77Ni1Si9B13 Alloy Ribbons","authors":"V. I. Lad’yanov,&nbsp;M. S. Konovalov,&nbsp;M. I. Mokrushina,&nbsp;A. I. Shilyaev,&nbsp;D. P. Ardasheva","doi":"10.1134/S1063785024700184","DOIUrl":"10.1134/S1063785024700184","url":null,"abstract":"<p>Fast-quenched ribbons with thicknesses of 200, 50, 30, and 20 μm have been obtained by melt spinning at hardening disk rotation speeds of 500, 1500, 2500, and 3500 rpm, respectively. The chemical composition of the ribbons has been determined by atomic emission spectroscopy on a Spectroflame Modula S spectrometer. X-ray diffraction patterns of the ribbons have obtained on a DRON-6 diffractometer (Cu<i>K</i>α radiation) with a graphite monochromator. The effect of the melt cooling rate on the structural state of the contact and free sides of the Fe<sub>77</sub>Ni<sub>1</sub>Si<sub>9</sub>B<sub>13</sub> alloy ribbons has been examined. It has been established that, by increasing the melt cooling rate, one can obtain fast-quenched Fe<sub>77</sub>Ni<sub>1</sub>Si<sub>9</sub>B<sub>13</sub> alloy ribbons with different structures: X-ray amorphous at 3500, 2500, and 1500 rpm and crystalline at 500 rpm. Cooling of the melt at a quenching disk rotation speed of 500 rpm makes it possible to obtain Fe<sub>77</sub>Ni<sub>1</sub>Si<sub>9</sub>B<sub>13</sub> alloy ribbons with crystallographic structures of three types: <i>A</i>2, <i>C</i>16, and <i>D</i>0<sub>3</sub> (<i>A</i>2 corresponds to the α-Fe(Si) phase; <i>C</i>16, to the Fe<sub>2</sub>B phase; and <i>D</i>0<sub>3</sub>, to the Fe<sub>3</sub>Si phase). In the surface layers on the ribbon free side, texturing of the Fe<sub>3</sub>Si phase has been detected. It is noted that the crystal structure of the ribbons obtained by melt cooling on a quenching disk at a rotation speed of 500 rpm differs from the structure of the ribbons of this alloy crystallized from the amorphous state by annealing.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"50 1","pages":"1 - 5"},"PeriodicalIF":0.8,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140323756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gate-Source Voltage Dependence of the Electrical Conductivity of Nickel-Salen Polymers in the Electrochemical Transistor 电化学晶体管中镍盐聚合物电导率的栅源电压依赖性
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s106378502390056x
E. A. Smirnova, I. A. Chepurnaya
{"title":"Gate-Source Voltage Dependence of the Electrical Conductivity of Nickel-Salen Polymers in the Electrochemical Transistor","authors":"E. A. Smirnova, I. A. Chepurnaya","doi":"10.1134/s106378502390056x","DOIUrl":"https://doi.org/10.1134/s106378502390056x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>For the first time, polymeric forms of the complexes N,N'-bis(salicylidene)ethylenediaminonickel (II) and N,N'-bis(3-methoxysalicylidene)ethylenediaminonickel (II) have been investigated as functional materials for the conducting channels of organic electrochemical transistors. The dependence of the electrical conductivity of the polymers on the electrolyte anion-doping level has been established. The polymer film conductance versus gate voltage curve parameters have been shown to depend on the molecular structure of the complex and the nature of the electrolyte solvent.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"22 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Magnetometric Sensor for Magnetoencephalographic Complexes 用于脑磁图复合体的光学磁力传感器
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900601
A. K. Vershovskii, M. V. Petrenko
{"title":"Optical Magnetometric Sensor for Magnetoencephalographic Complexes","authors":"A. K. Vershovskii, M. V. Petrenko","doi":"10.1134/s1063785023900601","DOIUrl":"https://doi.org/10.1134/s1063785023900601","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A new implementation of the method of optical pumping of alkaline atoms in the scheme of a highly sensitive compact single-beam sensor of a nonzero magnetic field is proposed, which allows it to be used as part of a magnetoencephalographic complex with a remote laser pumping source. The proposed method makes it possible, in particular, to pump an array of sensors with a single source of polarization-modulated resonant radiation connected to sensors by means of polarization-supporting optical fibers. A model experiment has been carried out confirming the principle feasibility and effectiveness of the method.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"161 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Subwave Textured Surfaces for the Radiation Coupling from the Waveguide 用于波导辐射耦合的子波纹理表面
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010339
G. V. Voznyuk, I. N. Grigorenko, M. I. Mitrofanov, V. V. Nikolaev, V. P. Evtikhiev
{"title":"Subwave Textured Surfaces for the Radiation Coupling from the Waveguide","authors":"G. V. Voznyuk, I. N. Grigorenko, M. I. Mitrofanov, V. V. Nikolaev, V. P. Evtikhiev","doi":"10.1134/s1063785023010339","DOIUrl":"https://doi.org/10.1134/s1063785023010339","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"61 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of Radiation Resistance of Heterostructure Silicon Solar Cells 研究异质结构硅太阳能电池的抗辐射能力
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900741
V. S. Kalinovskii, E. I. Terukov, K. K. Prudchenko, A. A. Bazeley, E. V. Kontrosh, I. A. Tolkachev, A. A. Titov
{"title":"Investigation of Radiation Resistance of Heterostructure Silicon Solar Cells","authors":"V. S. Kalinovskii, E. I. Terukov, K. K. Prudchenko, A. A. Bazeley, E. V. Kontrosh, I. A. Tolkachev, A. A. Titov","doi":"10.1134/s1063785023900741","DOIUrl":"https://doi.org/10.1134/s1063785023900741","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5 × 10<sup>14</sup>–1 × 10<sup>15</sup> cm<sup>–2</sup> has been studied. Studies have shown that the smallest degradation of the “saturation” currents of the diffusion current flow mechanism from <i>J</i><sub>0<i>d</i></sub> ≤ 5 × 10<sup>–13</sup> to <i>J</i><sub>0<i>d</i></sub> ≤ 3 × 10<sup>–12</sup> A/cm<sup>2</sup> and efficiency from 19.2 to 13.6% (AM0, 1367 W/m<sup>2</sup>) were <i>n</i>-α-Si:H/<i>c</i>-<i>p</i>(Ga)/<i>p</i>-α-Si:H and <i>n</i>-<i>c-</i>Si:H/<i>c</i>-<i>p</i>(Ga)/<i>p</i>-α-Si:H. The results obtained make it possible to evaluate the prospects for the use of heterostructure silicon solar cells for low-orbit spacecraft.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"19 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bending Test of Nanoscale Consoles in Atomic Force Microscope 原子力显微镜中纳米级控制台的弯曲测试
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010078
A. V. Ankudinov, M. M. Khalisov
{"title":"Bending Test of Nanoscale Consoles in Atomic Force Microscope","authors":"A. V. Ankudinov, M. M. Khalisov","doi":"10.1134/s1063785023010078","DOIUrl":"https://doi.org/10.1134/s1063785023010078","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Consoles and bridges of MgNi<sub>2</sub>Si<sub>2</sub>O<sub>5</sub>(OH)<sub>4</sub> nanoscrolls were tested for bending in atomic force microscope. Using test data, we analyze how the consoles or bridges were fixed, and took this information into account when calculating the Young’s modulus of the nanoscrolls. The results on the consoles are in good agreement with the results on the bridges when modeling the latter as three-span beams, and the former as beams on an elastic foundation with a suspended console.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"30 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase Transformations in Gallium Oxide Layers 氧化镓层中的相变
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900856
A. V. Osipov, Sh. Sh. Sharofidinov, A. V. Kremleva, E. V. Osipova, A. M. Smirnov, S. A. Kukushkin
{"title":"Phase Transformations in Gallium Oxide Layers","authors":"A. V. Osipov, Sh. Sh. Sharofidinov, A. V. Kremleva, E. V. Osipova, A. M. Smirnov, S. A. Kukushkin","doi":"10.1134/s1063785023900856","DOIUrl":"https://doi.org/10.1134/s1063785023900856","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The three main crystalline modifications of Ga<sub>2</sub>O<sub>3</sub>, namely α-phase, ε-phase, and β-phase were grown on sapphire substrates using the hydride vapour phase epitaxy (HVPE) method. The temperatures of the substrates and the values of the precursor fluxes required to obtain each phase exclusively were determined. It was observed that the metastable ε-phase easily transforms into a stable β-phase during annealing. However, the metastable α-phase undergoes an intermediate amorphous phase during annealing, leading to flaking and collapse. This behavior arises from the excessively large increase in density (~10%) during the transformation from α-phase to β-phase, which results in significant elastic stresses and an increase in the height of the phase transition barrier.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"76 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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