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Subwave Textured Surfaces for the Radiation Coupling from the Waveguide 用于波导辐射耦合的子波纹理表面
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010339
G. V. Voznyuk, I. N. Grigorenko, M. I. Mitrofanov, V. V. Nikolaev, V. P. Evtikhiev
{"title":"Subwave Textured Surfaces for the Radiation Coupling from the Waveguide","authors":"G. V. Voznyuk, I. N. Grigorenko, M. I. Mitrofanov, V. V. Nikolaev, V. P. Evtikhiev","doi":"10.1134/s1063785023010339","DOIUrl":"https://doi.org/10.1134/s1063785023010339","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Magnetometric Sensor for Magnetoencephalographic Complexes 用于脑磁图复合体的光学磁力传感器
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900601
A. K. Vershovskii, M. V. Petrenko
{"title":"Optical Magnetometric Sensor for Magnetoencephalographic Complexes","authors":"A. K. Vershovskii, M. V. Petrenko","doi":"10.1134/s1063785023900601","DOIUrl":"https://doi.org/10.1134/s1063785023900601","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A new implementation of the method of optical pumping of alkaline atoms in the scheme of a highly sensitive compact single-beam sensor of a nonzero magnetic field is proposed, which allows it to be used as part of a magnetoencephalographic complex with a remote laser pumping source. The proposed method makes it possible, in particular, to pump an array of sensors with a single source of polarization-modulated resonant radiation connected to sensors by means of polarization-supporting optical fibers. A model experiment has been carried out confirming the principle feasibility and effectiveness of the method.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gate-Source Voltage Dependence of the Electrical Conductivity of Nickel-Salen Polymers in the Electrochemical Transistor 电化学晶体管中镍盐聚合物电导率的栅源电压依赖性
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s106378502390056x
E. A. Smirnova, I. A. Chepurnaya
{"title":"Gate-Source Voltage Dependence of the Electrical Conductivity of Nickel-Salen Polymers in the Electrochemical Transistor","authors":"E. A. Smirnova, I. A. Chepurnaya","doi":"10.1134/s106378502390056x","DOIUrl":"https://doi.org/10.1134/s106378502390056x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>For the first time, polymeric forms of the complexes N,N'-bis(salicylidene)ethylenediaminonickel (II) and N,N'-bis(3-methoxysalicylidene)ethylenediaminonickel (II) have been investigated as functional materials for the conducting channels of organic electrochemical transistors. The dependence of the electrical conductivity of the polymers on the electrolyte anion-doping level has been established. The polymer film conductance versus gate voltage curve parameters have been shown to depend on the molecular structure of the complex and the nature of the electrolyte solvent.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase Transformations in Gallium Oxide Layers 氧化镓层中的相变
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900856
A. V. Osipov, Sh. Sh. Sharofidinov, A. V. Kremleva, E. V. Osipova, A. M. Smirnov, S. A. Kukushkin
{"title":"Phase Transformations in Gallium Oxide Layers","authors":"A. V. Osipov, Sh. Sh. Sharofidinov, A. V. Kremleva, E. V. Osipova, A. M. Smirnov, S. A. Kukushkin","doi":"10.1134/s1063785023900856","DOIUrl":"https://doi.org/10.1134/s1063785023900856","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The three main crystalline modifications of Ga<sub>2</sub>O<sub>3</sub>, namely α-phase, ε-phase, and β-phase were grown on sapphire substrates using the hydride vapour phase epitaxy (HVPE) method. The temperatures of the substrates and the values of the precursor fluxes required to obtain each phase exclusively were determined. It was observed that the metastable ε-phase easily transforms into a stable β-phase during annealing. However, the metastable α-phase undergoes an intermediate amorphous phase during annealing, leading to flaking and collapse. This behavior arises from the excessively large increase in density (~10%) during the transformation from α-phase to β-phase, which results in significant elastic stresses and an increase in the height of the phase transition barrier.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bending Test of Nanoscale Consoles in Atomic Force Microscope 原子力显微镜中纳米级控制台的弯曲测试
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010078
A. V. Ankudinov, M. M. Khalisov
{"title":"Bending Test of Nanoscale Consoles in Atomic Force Microscope","authors":"A. V. Ankudinov, M. M. Khalisov","doi":"10.1134/s1063785023010078","DOIUrl":"https://doi.org/10.1134/s1063785023010078","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Consoles and bridges of MgNi<sub>2</sub>Si<sub>2</sub>O<sub>5</sub>(OH)<sub>4</sub> nanoscrolls were tested for bending in atomic force microscope. Using test data, we analyze how the consoles or bridges were fixed, and took this information into account when calculating the Young’s modulus of the nanoscrolls. The results on the consoles are in good agreement with the results on the bridges when modeling the latter as three-span beams, and the former as beams on an elastic foundation with a suspended console.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes 用于 InAlAs-InGaAs 雪崩光电二极管的蘑菇状 Mesa 结构
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900819
N. A. Maleev, A. G. Kuzmenkov, M. M. Kulagina, A. P. Vasyl’ev, S. A. Blokhin, S. I. Troshkov, A. V. Nashchekin, M. A. Bobrov, A. A. Blokhin, K. O. Voropaev, V. E. Bugrov, V. M. Ustinov
{"title":"Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes","authors":"N. A. Maleev, A. G. Kuzmenkov, M. M. Kulagina, A. P. Vasyl’ev, S. A. Blokhin, S. I. Troshkov, A. V. Nashchekin, M. A. Bobrov, A. A. Blokhin, K. O. Voropaev, V. E. Bugrov, V. M. Ustinov","doi":"10.1134/s1063785023900819","DOIUrl":"https://doi.org/10.1134/s1063785023900819","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam epitaxy. Fabricated APDs with the sensitive area diameter of about 30 micron were passivated by SiN deposition and demonstrated avalanche breakdown voltage <i>V</i><sub>br</sub> 70–80 V. At the applied bias of 0.9 <i>V</i><sub>br</sub>, the dark current was 75–200 nA. The single-mode coupled APDs demonstrated responsivity at a gain of unity higher than 0.5 A/W at 1550 nm.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Period of Droplet Quasi-Bessel Beam Generated with the Round-Tip Axicon 使用圆尖轴心线产生的液滴准贝塞尔光束的周期
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010261
V. Yu. Mylnikov, D. V. Chistyakov, S. H. Abdulrazak, N. G. Deryagin, Yu. M. Zadiranov, S. N. Losev, V. V. Dudelev, G. S. Sokolovskii
{"title":"Period of Droplet Quasi-Bessel Beam Generated with the Round-Tip Axicon","authors":"V. Yu. Mylnikov, D. V. Chistyakov, S. H. Abdulrazak, N. G. Deryagin, Yu. M. Zadiranov, S. N. Losev, V. V. Dudelev, G. S. Sokolovskii","doi":"10.1134/s1063785023010261","DOIUrl":"https://doi.org/10.1134/s1063785023010261","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We demonstrate the experimental study of the axial intensity distribution of a quasi-Bessel beam with a droplet structure of the central core, formed by an axicon with the round-tip, and the results of the theoretical calculations. We show that the period of droplet quasi-Bessel beam is determined by the shape of the surface rounding and the angle at the top of the axicon lens and depends on the distance to it. The analysis of this dependence makes it possible to restore the shape of the round-tip of the axicon without 3D scanning.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal Conductivity of Hybrid SiC/Si Substrates for the Growth of LED Heterostructures 用于生长 LED 异质结构的混合碳化硅/硅基底的热传导率
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010200
S. A. Kukushkin, L. K. Markov, A. V. Osipov, G. V. Svyatets, A. E. Chernyakov, S. I. Pavlov
{"title":"Thermal Conductivity of Hybrid SiC/Si Substrates for the Growth of LED Heterostructures","authors":"S. A. Kukushkin, L. K. Markov, A. V. Osipov, G. V. Svyatets, A. E. Chernyakov, S. I. Pavlov","doi":"10.1134/s1063785023010200","DOIUrl":"https://doi.org/10.1134/s1063785023010200","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>the thermal characteristics of SiC/Si samples obtained by the method of coordinated substitution of atoms at different thicknesses of SiC have been experimentally investigated. It has been found that for SiC thicknesses less than 200 nm, the thermal resistance of SiC/Si is approximately equal to 2 K/W, which is the same as for pure silicon substrate. Such samples will perfectly remove heat from the light-emitting heterostructure grown on SiC/Si. With an increase in the thickness of SiC, the SiC film is detached, which leads to a loss of thermal contact between SiC and Si. The thermal resistance increases at the same time by more than two orders of magnitude. The ability to remove easily the opaque part of the substrate can form the basis of the technology for manufacturing flip-chip LED.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 1D Quasilinear Equation Describing the Current Drive Excitation by Helicons in a Tokamak Plasma 描述托卡马克等离子体中氦子电流驱动激励的一维准线性方程
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900480
A. Yu. Popov, E. Z. Gusakov
{"title":"A 1D Quasilinear Equation Describing the Current Drive Excitation by Helicons in a Tokamak Plasma","authors":"A. Yu. Popov, E. Z. Gusakov","doi":"10.1134/s1063785023900480","DOIUrl":"https://doi.org/10.1134/s1063785023900480","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>—</h3><p>A quasilinear equation which allows describing evolution of the electron distribution function and generation of non-inductive currents by helicons is obtained. It is shown that in the analyzed case the Fokker–Planck equation can be approximated by a one-dimensional equation in the longitudinal electron velocity space with a diffusion coefficient proportional to the helicon power absorbed by electrons due to Landau damping.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Piezoceramic Resistance to Radiation Amorphization During Operation in ITER 压电陶瓷在国际热核聚变实验堆运行期间的抗辐射非晶化能力
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900443
E. E. Mukhin, E. P. Smirnova, N. A. Babinov, I. A. Khodunov, R. S. Smirnov, M.S. Kuligin
{"title":"Piezoceramic Resistance to Radiation Amorphization During Operation in ITER","authors":"E. E. Mukhin, E. P. Smirnova, N. A. Babinov, I. A. Khodunov, R. S. Smirnov, M.S. Kuligin","doi":"10.1134/s1063785023900443","DOIUrl":"https://doi.org/10.1134/s1063785023900443","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Piezoelectric motors designed for operation in the ITER tokamak-reactor must be tested for stability under severe radiation conditions. Properties of lead zirconate-titanate that is the most common type of piezoelectric materials were analyzed from the point of view on influence of radiation. It is shown that, at the expected in ITER level of radiation, this piezoceramics has a good potential for resistance to radiation induced amorphization and depolarization.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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