Advances in Optoelectronics最新文献_第7页

Electronically Tunable Wide Band Optical Delay Line Based on InGaAs Quantum Well Microresonators 基于InGaAs量子阱微谐振器的电子可调谐宽带光延迟线

Advances in Optoelectronics Pub Date : 2013-09-08 DOI: 10.1155/2013/930369

Yan Zhang, G. Taylor

引用次数: 0

Initial Antinoise Performance Analysis of Pupil Phase Diversity Based on Genetic Algorithm 基于遗传算法的瞳孔相位分集初始抗噪性能分析

Advances in Optoelectronics Pub Date : 2013-09-02 DOI: 10.1155/2013/721420

Huizhen Yang, Yaoqiu Li

引用次数: 0

Design and Investigation of SST/nc-Si:H/M (M = Ag, Au, Ni) and M/nc-Si:H/M Multifunctional Devices SST/nc-Si:H/M (M = Ag, Au, Ni)和M/nc-Si:H/M多功能器件的设计与研究

Advances in Optoelectronics Pub Date : 2013-08-07 DOI: 10.1155/2013/807542

A. F. Qasrawi, Salam M. Kmail, Samah F. Assaf, Z. M. Saleh

{"title":"Design and Investigation of SST/nc-Si:H/M (M = Ag, Au, Ni) and M/nc-Si:H/M Multifunctional Devices","authors":"A. F. Qasrawi, Salam M. Kmail, Samah F. Assaf, Z. M. Saleh","doi":"10.1155/2013/807542","DOIUrl":"https://doi.org/10.1155/2013/807542","url":null,"abstract":"Hydrogenated nanocrystalline Silicon thin films prepared by the very high frequency chemical vapor deposition technique (VHF-CVD) on stainless steel (SST) substrates are used to design Schottky point contact barriers for the purpose of solar energy conversion and passive electronic component applications. In this process, the contact performance between SST and M (M = Ag, Au, and Ni) and between Ag, Au, and Ni electrodes was characterized by means of current-voltage, capacitance-voltage, and light intensity dependence of short circuit ( <path id=\"x73\" d=\"M319 325l-25 -7q-33 99 -103 99q-29 0 -47 -19.5t-18 -49.5t22 -49.5t62 -36.5q63 -26 95 -57t32 -79q0 -64 -50 -101t-115 -37q-35 0 -67.5 10.5t-46.5 23.5q-5 11 -11 51t-6 67l27 5q14 -53 46.5 -88.5t75.5 -35.5q29 0 50 19.5t21 50.5t-19.5 51.5t-59.5 39.5\u0000q-28 12 -46 22.5t-38.5 27t-30.5 38.5t-10 49q0 54 42.5 92t109.5 38q48 0 88 -18q6 -15 13 -50.5t9 -55.5z\" /> <path id=\"x63\" d=\"M390 111l17 -21q-34 -45 -80 -73.5t-89 -28.5q-91 0 -146 62t-55 147q0 118 101 195q74 57 149 57h1q59 0 90 -27q16 -14 16 -30q0 -15 -12 -29t-21 -14q-8 0 -19 11q-44 41 -101 41q-52 0 -87.5 -42.5t-35.5 -117.5q0 -49 15 -87t39 -58t49 -30t48 -10q33 0 60.5 12\u0000t60.5 43z\" /> ) current and open circuit voltage ( ) of the contacts. Particularly, the devices ideality factors, barrier heights were evaluated by the Schottky method and compared to the Cheung's. Best Schottky device performance with lowest ideality factor suitable for electronic applications was observed in the SST/nc-Si:H/Ag structure. This device reflects a of 229 mV with an of 1.6 mA/cm2 under an illumination intensity of ~40 klux. On the other hand, the highest being 9.0 mA/cm2 and the of 53.1 mV were observed for Ni/nc-Si:H/Au structure. As these voltages represent the maximum biasing voltage for some of the designed devices, the SST/nc-Si:H/M and M/nc-Si:H/M can be regarded as multifunctional self-energy that provided electronic devices suitable for active or passive applications.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2013-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/807542","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64262378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multiband Negative Permittivity Metamaterials and Absorbers 多带负介电常数超材料和吸收材料

Advances in Optoelectronics Pub Date : 2013-07-28 DOI: 10.1155/2013/269170

Yiran Tian, G. Wen, Yongjun Huang

引用次数: 7

A Viable Passive Optical Network Design for Ultrahigh Definition TV Distribution 一种可行的超高清电视分配无源光网络设计

Advances in Optoelectronics Pub Date : 2013-05-16 DOI: 10.1155/2013/219271

S. Niazi, Xiaoguang Zhang, Lixia Xi, Abid Munir, Muhammad Idrees, Yousaf Khan

引用次数: 1

Preparation of Organic Zn-Phthalocyanine-Based Semiconducting Materials and Their Optical and Electrochemical Characterization 有机锌酞菁基半导体材料的制备及其光学和电化学表征

Advances in Optoelectronics Pub Date : 2013-05-02 DOI: 10.1155/2013/321563

Amira K. Hajri, S. Touaiti, B. Jamoussi

引用次数: 11

Germanium Doping to Improve Carrier Mobility in CdO Films 掺杂锗提高CdO薄膜载流子迁移率

Advances in Optoelectronics Pub Date : 2013-04-03 DOI: 10.1155/2013/804646

A. Dakhel

引用次数: 17

The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of Wz-GaN Reach-Through Avalanche Photodiodes 电子与空穴光电流对Wz-GaN达通雪崩光电二极管光电特性的影响

Advances in Optoelectronics Pub Date : 2013-03-25 DOI: 10.1155/2013/840931

M. Ghosh, Mangolika Mondal, A. Acharyya

{"title":"The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of Wz-GaN Reach-Through Avalanche Photodiodes","authors":"M. Ghosh, Mangolika Mondal, A. Acharyya","doi":"10.1155/2013/840931","DOIUrl":"https://doi.org/10.1155/2013/840931","url":null,"abstract":"The authors have made an attempt to investigate the effect of electron versus hole photocurrent on the optoelectric properties of structured Wurtzite-GaN (Wz-GaN) reach-through avalanche photodiodes (RAPDs). The photo responsivity and optical gain of the devices are obtained within the wavelength range of 300 to 450 nm using a novel modeling and simulation technique developed by the authors. Two optical illumination configurations of the device such as Top Mounted (TM) and Flip Chip (FC) are considered for the present study to investigate the optoelectric performance of the device separately due to electron dominated and hole dominated photocurrents, respectively, in the visible-blind ultraviolet (UV) spectrum. The results show that the peak unity gain responsivity and corresponding optical gain of the device are 555.78 mA W−1 and , respectively, due to hole dominated photocurrent (i.e., in FC structure); while those are 480.56 mA W−1 and , respectively, due to electron dominated photocurrent (i.e., in TM structure) at the wavelength of 365 nm and for applied reverse bias of 85 V. Thus, better optoelectric performance of Wz-GaN RAPDs can be achieved when the photocurrent is made hole dominated by allowing the UV light to be shined on the -layer instead of -layer of the device.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-12"},"PeriodicalIF":0.0,"publicationDate":"2013-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/840931","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64282381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Important Effect of Defect Parameters on the Characteristics of Thue-Morse Photonic Crystal Filters 缺陷参数对Thue-Morse光子晶体滤波器特性的重要影响

Advances in Optoelectronics Pub Date : 2013-03-21 DOI: 10.1155/2013/856148

H. Alipour-Banaei, F. Mehdizadeh, Mahdi Hassangholizadeh-Kashtiban

引用次数: 13

Quantum-Dot Semiconductor Optical Amplifiers: State Space Model versus Rate Equation Model 量子点半导体光放大器:状态空间模型与速率方程模型

Advances in Optoelectronics Pub Date : 2013-03-07 DOI: 10.1155/2013/831852

H. Taleb, K. Abedi, S. Golmohammadi

引用次数: 2