有机锌酞菁基半导体材料的制备及其光学和电化学表征

Q3 Engineering

Advances in Optoelectronics Pub Date : 2013-05-02 DOI:10.1155/2013/321563

Amira K. Hajri, S. Touaiti, B. Jamoussi

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引用次数: 11

摘要

为了增加有机半导体的种类，合成并表征了新型的酞菁锌基有机材料。用核磁共振、红外光谱和紫外-可见光谱对新化合物进行了1H和13C表征。并对其吸收、荧光和电化学性能进行了研究。在稀溶液中观察到绿色光致发光。在固体薄膜中，π-π*相互作用影响了光学性质，得到了红移光致发光光谱;发现ZnPAL (647 nm)和ZnPTr (655 nm)的红发射。通过循环伏安法，ZnPAl和ZnPTr的电化学带隙分别为1.94和1.17 eV。制备了氧化铟锡/酞菁锌/铝结构的单层二极管器件，其导通电压相对较低(ZnPAl为3.3 V, ZnPTr为3 V)。

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Preparation of Organic Zn-Phthalocyanine-Based Semiconducting Materials and Their Optical and Electrochemical Characterization

In order to increase the species of organic semiconductors, new Zn-phthalocyanines-based organic materials were synthesized and characterized. The new compounds have been characterized by 1H and 13C using NMR, FTIR, and UV-Vis. The absorption, fluorescence, and electrochemical properties were also studied. Green photoluminescence was observed in dilute solutions. In solid thin films, π-π* interactions influenced the optical properties, and redshifted photoluminescence spectra were obtained; red emissions for ZnPAL (647 nm) and ZnPTr (655 nm) were found. By cyclic voltammetry, the electrochemical band gap was estimated to be 1.94 and 1.17 eV for ZnPAl and ZnPTr, respectively. Single-layer diode devices of an indium tin oxide/Zn-phthalocyanine/aluminum configuration were fabricated and showed relatively low turn-on voltages (3.3 V for ZnPAl and 3 V for ZnPTr).

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来源期刊

Advances in Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

期刊介绍： Advances in OptoElectronics is a peer-reviewed, open access journal that publishes original research articles as well as review articles in all areas of optoelectronics.