Advances in Optoelectronics最新文献_第4页

Optimization of Multiband White-Light Illuminants for Specified Color Temperatures 特定色温下多波段白光光源的优化

Advances in Optoelectronics Pub Date : 2015-05-25 DOI: 10.1155/2015/263791

S. Soltic, A. Chalmers

引用次数: 2

Block-Based Compressed Sensing for Neutron Radiation Image Using WDFB 基于WDFB的中子辐射图像分块压缩感知

Advances in Optoelectronics Pub Date : 2015-04-02 DOI: 10.1155/2015/496863

Wei Jin, Zhen Liu, Gang Li

引用次数: 3

Unusual Blueshifting of Optical Band Gap of CdS Nanocrystals through a Chemical Bath Deposition Method 化学浴法沉积CdS纳米晶体光学带隙的异常蓝移

Advances in Optoelectronics Pub Date : 2015-03-05 DOI: 10.1155/2015/317108

Shuqing Yuan, P. Ji, Yong Li, Yueli Song, Fengqun Zhou

引用次数: 8

Reconfigurable CPLAG and Modified PFAL Adiabatic Logic Circuits 可重构CPLAG和改进PFAL绝热逻辑电路

Advances in Optoelectronics Pub Date : 2015-02-24 DOI: 10.1155/2015/202131

M. Sharma, A. Noor

{"title":"Reconfigurable CPLAG and Modified PFAL Adiabatic Logic Circuits","authors":"M. Sharma, A. Noor","doi":"10.1155/2015/202131","DOIUrl":"https://doi.org/10.1155/2015/202131","url":null,"abstract":"Previously, authors have proposed CPLAG and MCPLAG circuits extracting benefits of CPL family implemented based upon semiadiabatic logic for low power VLSI circuit design along with gating concept. Also authors have communicated RCPLAG circuits adding another dimension of reconfigurability into CPLAG/MCPLAG circuits. Moving ahead, in this paper, authors have implemented/reconfigured RCPLAG universal Nand/And gate and universal Nor/Or gate for extracting behavior of dynamic positive edge triggered DFF. Authors have also implemented Adder/Subtractor circuit using different techniques. Authors have also reported modification in PFAL semiadiabatic circuit family to further reduce the power dissipation. Functionality of these is verified and found to be satisfactory. Further these are examined rigorously with voltage, , temperature, and transistor size variation. Performance of these is examined with these variations with power dissipation, delays, rise, and fall times associated. From the analysis it is found that best operating condition for DFF based upon RCPLAG universal gate can be achieved at supply voltage lower than 3 V which can be used for different transistor size up to 36 μm. Average power dissipation is 0.2 μW at 1 V and 30 μW at 2 V at 100 ff 25°C approximately. Average power dissipated by CPLAG Adder/Subtractot is 58 μW. Modified PFAL circuit reduces average power by 9% approximately.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2015 1","pages":"1-10"},"PeriodicalIF":0.0,"publicationDate":"2015-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2015/202131","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64839777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

A Microring Temperature Sensor Based on the Surface Plasmon Wave 基于表面等离子体波的微环温度传感器

Advances in Optoelectronics Pub Date : 2015-02-15 DOI: 10.1155/2015/696749

Wenchao Li, Xiaopeng Sha, Dong-yang An, Zhiquan Li

{"title":"A Microring Temperature Sensor Based on the Surface Plasmon Wave","authors":"Wenchao Li, Xiaopeng Sha, Dong-yang An, Zhiquan Li","doi":"10.1155/2015/696749","DOIUrl":"https://doi.org/10.1155/2015/696749","url":null,"abstract":"A structure of microring sensor suitable for temperature measurement based on the surface plasmon wave is put forward in this paper. The sensor uses surface plasmon multilayer waveguiding structure in the vertical direction and U-shaped microring structure in the horizontal direction and utilizes SOI as the thermal material. The transfer function derivation of the structure of surface plasmon microring sensor is according to the transfer matrix method. While the change of refractive index of Si is caused by the change of ambient temperature, the effective refractive index of the multilayer waveguiding structure is changed, resulting in the drifting of the sensor output spectrum. This paper focuses on the transmission characteristics of multilayer waveguide structure and the impact on the output spectrum caused by refractive index changes in temperature parts. According to the calculation and simulation, the transmission performance of the structure is stable and the sensitivity is good. The resonance wavelength shift can reach 0.007 μm when the temperature is increased by 100 k and FSR can reach about 60 nm. This structure achieves a high sensitivity in the temperature sense taking into account a wide range of filter frequency selections, providing a theoretical basis for the preparation of microoptics.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"24 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2015-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2015/696749","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"65104915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Efficiency Driver for AMOLED with Compensation 带补偿的AMOLED高效率驱动器

Advances in Optoelectronics Pub Date : 2015-02-10 DOI: 10.1155/2015/954783

Said Saad, L. Hassine

引用次数: 0

All Pass Network Based MSO Using OTRA 基于OTRA的全通网络MSO

Advances in Optoelectronics Pub Date : 2015-01-21 DOI: 10.1155/2015/382360

R. Pandey, N. Pandey, Romita Mullick, Sarjana Yadav, Rashika Anurag

引用次数: 12

Retracted: Occluded Face Recognition Based on Double Layers Module Sparsity Difference 基于双层模块稀疏度差的遮挡人脸识别

Advances in Optoelectronics Pub Date : 2015-01-20 DOI: 10.1155/2015/210160

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