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Self‐Alignment Embedded Thin‐Film Transistor with High Transparency and Optimized Performance 具有高透明度和优化性能的自对准嵌入式薄膜晶体管
Advanced Materials & Technologies Pub Date : 2022-08-05 DOI: 10.1002/admt.202200879
Fei Zheng, Lei Li, Luodan Hu, Xiaoqing Huang, Tze-Peng Kuo, Kuan‐Chang Chang
{"title":"Self‐Alignment Embedded Thin‐Film Transistor with High Transparency and Optimized Performance","authors":"Fei Zheng, Lei Li, Luodan Hu, Xiaoqing Huang, Tze-Peng Kuo, Kuan‐Chang Chang","doi":"10.1002/admt.202200879","DOIUrl":"https://doi.org/10.1002/admt.202200879","url":null,"abstract":"Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) have shown significant potential in the applications of increasingly advanced transparent and flexible electronic devices, where high speed, high transparency, and low power consumption are highly demanded. Yet, typical back‐channel etch (BCE) configuration used in the majority of TFTs still suffers from poor gate controllability, severe electrical field dispersion, relatively large parasitic capacitance and contact resistance. Here, a new embedded structure for TFTs with self‐alignment and even simpler fabrication process, outperforming conventional BCE counterpart in above aspects, is proposed in this work. More concentrated electrical field, improved gate control ability accompanied with lower contact resistance are achieved in the embedded TFTs. Consequently, superior electrical characteristics with subthreshold swing of 106.7 mV dec−1 and mobility as high as 32.10 cm2 V−1 s−1 are obtained. In addition, leakage current as well as contact resistance evidently decline compared to that in traditional BCE TFTs. By the assistance of Silvaco TCAD simulation, the performance and mechanism behind are cross‐validated from another perspective. Overall, such embedded configuration has equipped TFTs with appealing performance and it is also possible to enable other devices exploiting such structure with new possibility and thus a broader application.","PeriodicalId":7200,"journal":{"name":"Advanced Materials & Technologies","volume":"174 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79630654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low‐Power‐Consumption, Reversible 3D Optical Storage Based on Selectively Laser‐Induced Photoluminescence Degradation in CsPbBr3 Quantum Dots Doped Glass 基于CsPbBr3量子点掺杂玻璃选择性激光诱导光致发光降解的低功耗、可逆3D光存储
Advanced Materials & Technologies Pub Date : 2022-08-05 DOI: 10.1002/admt.202200470
Shengzhi Sun, Zhonghui Cheng, Juan Song, Chaoyue Yan, T.P.M. Man, G. Dong, B. Qian, Jianrong Qiu
{"title":"Low‐Power‐Consumption, Reversible 3D Optical Storage Based on Selectively Laser‐Induced Photoluminescence Degradation in CsPbBr3 Quantum Dots Doped Glass","authors":"Shengzhi Sun, Zhonghui Cheng, Juan Song, Chaoyue Yan, T.P.M. Man, G. Dong, B. Qian, Jianrong Qiu","doi":"10.1002/admt.202200470","DOIUrl":"https://doi.org/10.1002/admt.202200470","url":null,"abstract":"In recent years, inorganic lead halide perovskite quantum dots have been used in various optoelectronic fields for their excellent luminescence properties, such as narrow emission bands, ultra‐wide tunable emission wavelength, and high quantum efficiency. In this paper, different from luminescence optimization in most research, luminescence degradation of perovskite quantum dots is addressed by femtosecond laser irradiation and successfully used for three‐dimensional data storage in CsPbBr3 quantum dots doped glass. Photoluminescence (PL) degradation can be finely modulated by adjusting the laser parameters. PL degradation mechanism, investigated by optical spectroscopy and morphology characterization, is attributed to laser‐induced decomposition, recrystallization, and defection of CsPbBr3 quantum dots. Laser‐induced PL degradation and the followed PL recovery by heat treatment are repeated for several cycles, showing good reversibility. Multilayer PL degradation patterns are written into the glass and read out without crosstalk, indicating high‐reliability 3D optical storage characteristics. Amazingly, PL degradation can be induced by just a low‐energy single laser pulse with estimated subpicosecond writing time per bit, demonstrating its potential in high‐speed, low‐power consumption 3D optical storage.","PeriodicalId":7200,"journal":{"name":"Advanced Materials & Technologies","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79059377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis of Novel Ruthenium‐Polymetallaynes and Their Application in Multistate Electrochromic Memory 新型钌多金属炔的合成及其在多态电致变色存储器中的应用
Advanced Materials & Technologies Pub Date : 2022-08-05 DOI: 10.1002/admt.202200316
Po-Yuen Ho, E. Dmitrieva, Ningwei Sun, O. Guskova, F. Lissel
{"title":"Synthesis of Novel Ruthenium‐Polymetallaynes and Their Application in Multistate Electrochromic Memory","authors":"Po-Yuen Ho, E. Dmitrieva, Ningwei Sun, O. Guskova, F. Lissel","doi":"10.1002/admt.202200316","DOIUrl":"https://doi.org/10.1002/admt.202200316","url":null,"abstract":"Multilevel (or multistate) electrochromic devices have the potential to achieve highly compact memory capacity while instantaneously transferring data between memory and processing units. In this article, three novel solution‐processable ruthenium‐polymetallaynes (i.e., P1, P2, and P3), in which the redox‐addressable Ru center is covalently embedded into a conjugated organic polymer, are discussed. In pursuit of higher functionality (e.g., stable multistate behavior, low operating voltage), the organic ligand bridging the metal centers is systematically varied. The previously reported P1 has a bithiophene (BT) bridging ligand with a high degree of rotational freedom. By replacing BT with cyclopenta‐dithiophene in P2 and dithieno‐pyrrole (DTP) in P3, both of which are more planar than BT, the degree of freedom is decreased. By using DTP, redox‐matching is achieved between the metal center and organic ligand, leading to extra stability of the mixed‐valence (MV) state in P3. In‐depth experimental (i.e., in situ electron paramagnetic resonance and UV–vis–NIR spectroelectrochemistry) and theoretical studies (i.e., DFT calculations) are carried out on the polymer thin‐films, showing enhanced metal–metal (M–M) interaction in P2 and P3 and stable Robin–Day class III MV compound in P3. These polymers are also first time fabricated into solid‐state electrochromic devices and the stability of each oxidation state is characterized by tracing the change of transmittance over time, showing satisfactory cyclic stability and retention behavior (≈90% retention after 30 min).","PeriodicalId":7200,"journal":{"name":"Advanced Materials & Technologies","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91037353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Near‐Infrared to Visible Light Converter by Integrating Graphene Transistor into Perovskite Quantum Dot Light Emitting Diodes (Adv. Mater. Technol. 8/2022) 将石墨烯晶体管集成到钙钛矿量子点发光二极管(Adv. Mater)中的近红外到可见光转换器。抛光工艺。8/2022)
Advanced Materials & Technologies Pub Date : 2022-08-01 DOI: 10.1002/admt.202270048
Wei Zhao, Sheng Bi, Chengming Jiang, Jinhui Song
{"title":"Near‐Infrared to Visible Light Converter by Integrating Graphene Transistor into Perovskite Quantum Dot Light Emitting Diodes (Adv. Mater. Technol. 8/2022)","authors":"Wei Zhao, Sheng Bi, Chengming Jiang, Jinhui Song","doi":"10.1002/admt.202270048","DOIUrl":"https://doi.org/10.1002/admt.202270048","url":null,"abstract":"A near-infrared to visible light converter (NVLC) which could emit visible light according to external NIR is fabricated in article number 2200043 by Sheng Bi ,Jinhui Song, and co-workers. The NVLC is an integration of an inverted perovskite QLED and a hybrid PbS quantum dots/graphene transistor. Further, the micron-scale NVLCs are integrated into a matrix device that could sense NIR image and display it into visible light image.","PeriodicalId":7200,"journal":{"name":"Advanced Materials & Technologies","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72874586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Conjugated Polymer‐Wrapped Single‐Wall Carbon Nanotubes for High‐Mobility Photonic/Electrical Fully Modulated Synaptic Transistor 用于高迁移率光子/电全调制突触晶体管的共轭聚合物包裹单壁碳纳米管
Advanced Materials & Technologies Pub Date : 2022-08-01 DOI: 10.1002/admt.202101506
Maina Moses Mburu, Kuan‐Ting Lu, Nathaniel Prine, Ai-Nhan Au-Duong, Wei‐Hung Chiang, X. Gu, Y. Chiu
{"title":"Conjugated Polymer‐Wrapped Single‐Wall Carbon Nanotubes for High‐Mobility Photonic/Electrical Fully Modulated Synaptic Transistor","authors":"Maina Moses Mburu, Kuan‐Ting Lu, Nathaniel Prine, Ai-Nhan Au-Duong, Wei‐Hung Chiang, X. Gu, Y. Chiu","doi":"10.1002/admt.202101506","DOIUrl":"https://doi.org/10.1002/admt.202101506","url":null,"abstract":"Although synaptic devices have already demonstrated their operability through electric or photonic signals or a combination thereof, current challenges include developing a single hardware synaptic device that is independently fully operational through either photonic or electric signals to improve device versatility. Additionally, most previously reported devices are fabricated using multiple technical processes—which impede device implementation—while the low‐output current triggered in most such devices limits the possible integration of auxiliary gadgets. Therefore, by spontaneously wrapping a conjugated block copolymer around single‐walled carbon nanotubes (SWCNTs), a thin‐film transistor memory device comprising single‐layered poly(9,9‐dioctylfluorene)‐b‐polyisoprene (PF‐b‐PI)‐wrapped‐SWCNTs—which function as both a semiconductor and an electret layer—to simplify the device structure and fabrication is designed. Owing to the robust SWCNT charge carrier mobility (≈11.3 cm2 V−1 s−1), a high output current (10−4 to 10−3 A) can be achieved and because PF is a photoactive conjugated polymer, the photonic signal can also be modulated. The designed memory device independently exhibits both voltage‐ and light‐controllable switching, thereby mimicking biological synaptic behavior such as short‐ and long‐term plasticity, spike‐time, and spike‐rate‐dependent plasticity. This study may provide a suitable basis for developing more‐convenient, economical, highly versatile synaptic devices.","PeriodicalId":7200,"journal":{"name":"Advanced Materials & Technologies","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74431671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Microflow Manipulation by Velocity Field Gradient: Spontaneous Patterning of Silver Nanowires for Tailored Flexible Transparent Conductors (Adv. Mater. Technol. 8/2022) 速度场梯度的微流操纵:定制柔性透明导体银纳米线的自发图图化。抛光工艺。8/2022)
Advanced Materials & Technologies Pub Date : 2022-08-01 DOI: 10.1002/admt.202270046
Lingying Li, Wanli Li, Xuying Liu, Mizuki Tenjimbayashi, H. Segawa, C. Niikura, T. Nakayama, T. Minari
{"title":"Microflow Manipulation by Velocity Field Gradient: Spontaneous Patterning of Silver Nanowires for Tailored Flexible Transparent Conductors (Adv. Mater. Technol. 8/2022)","authors":"Lingying Li, Wanli Li, Xuying Liu, Mizuki Tenjimbayashi, H. Segawa, C. Niikura, T. Nakayama, T. Minari","doi":"10.1002/admt.202270046","DOIUrl":"https://doi.org/10.1002/admt.202270046","url":null,"abstract":"","PeriodicalId":7200,"journal":{"name":"Advanced Materials & Technologies","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84682947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bidirectional Origami Inspiring Versatile 3D Metasurface (Adv. Mater. Technol. 8/2022) 双向折纸启发多功能三维超表面(Adv. Mater.)。抛光工艺。8/2022)
Advanced Materials & Technologies Pub Date : 2022-08-01 DOI: 10.1002/admt.202270042
Ruixuan Zheng, R. Pan, Chilh-Hung Sun, Shuo Du, A. Jin, C. Li, Guangzhou Geng, Changzhi Gu, Junjie Li
{"title":"Bidirectional Origami Inspiring Versatile 3D Metasurface (Adv. Mater. Technol. 8/2022)","authors":"Ruixuan Zheng, R. Pan, Chilh-Hung Sun, Shuo Du, A. Jin, C. Li, Guangzhou Geng, Changzhi Gu, Junjie Li","doi":"10.1002/admt.202270042","DOIUrl":"https://doi.org/10.1002/admt.202270042","url":null,"abstract":"","PeriodicalId":7200,"journal":{"name":"Advanced Materials & Technologies","volume":"13 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84820652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Masthead: (Adv. Mater. Technol. 8/2022) 报头:(Adv. Mater)抛光工艺。8/2022)
Advanced Materials & Technologies Pub Date : 2022-08-01 DOI: 10.1002/admt.202270043
{"title":"Masthead: (Adv. Mater. Technol. 8/2022)","authors":"","doi":"10.1002/admt.202270043","DOIUrl":"https://doi.org/10.1002/admt.202270043","url":null,"abstract":"","PeriodicalId":7200,"journal":{"name":"Advanced Materials & Technologies","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89244918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inkjet‐Printed Piezoelectric Thin Films for Transparent Haptics 用于透明触觉的喷墨印刷压电薄膜
Advanced Materials & Technologies Pub Date : 2022-08-01 DOI: 10.1002/admt.202200147
S. Glinšek, Longfei Song, V. Kovacova, M. A. Mahjoub, Nicolas Godard, S. Girod, Jean‐Luc Biagi, R. Quintana, T. Schleeh, Matthieu Guédra, M. Rupin, E. Defay
{"title":"Inkjet‐Printed Piezoelectric Thin Films for Transparent Haptics","authors":"S. Glinšek, Longfei Song, V. Kovacova, M. A. Mahjoub, Nicolas Godard, S. Girod, Jean‐Luc Biagi, R. Quintana, T. Schleeh, Matthieu Guédra, M. Rupin, E. Defay","doi":"10.1002/admt.202200147","DOIUrl":"https://doi.org/10.1002/admt.202200147","url":null,"abstract":"Transparent thin‐film piezoelectric transducers are attractive for haptic displays. However, for their widespread use in consumer electronics, innovative and cost‐effective processing methods need to be developed. In this contribution the effectiveness of the deposition of lead zirconate titanate thin films by inkjet printing for the fabrication of haptic devices is demonstrated. The 1,3‐propanediol solvent is used to prepare effective inkjet‐printing inks from chemical solution deposition solutions. The printed thin‐film structures on fused silica glass substrates are 900 nm thick and strongly {100} oriented perovskite phase is detected in X‐ray diffraction patterns. To fabricate devices, interdigitated capacitors and SU‐8 insulation layers are deposited on top of the printed lead zirconate titanate. Dimensions of the final device are 15.7 × 3.4 mm2. A standing antisymmetric Lamb wave is observed at 63.3 kHz, with out‐of‐plane displacement reaching 2 µm at an applied voltage of 100 V. This value exceeds the limit at which the texture rendering function can be induced in the device. Good functional performance of the device is linked with good electromechanical properties of the printed piezoelectric, with permittivity ε ′ and piezoelectric coefficient e33,f values of 1000 and 7.7 C m−2, respectively, which are comparable to films prepared by standard spin‐coating process.","PeriodicalId":7200,"journal":{"name":"Advanced Materials & Technologies","volume":"35 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84677157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Lead‐Free Piezoelectric Composite Based on a Metamaterial for Electromechanical Energy Conversion 基于机电能量转换超材料的无铅压电复合材料
Advanced Materials & Technologies Pub Date : 2022-07-28 DOI: 10.1002/admt.202200650
Zehuan Wang, Jin Cheng, Yan Xie, Yunhan Wang, Zhonghui Yu, Shuai Li, Liuting Li, S. Dong, Hong Wang
{"title":"Lead‐Free Piezoelectric Composite Based on a Metamaterial for Electromechanical Energy Conversion","authors":"Zehuan Wang, Jin Cheng, Yan Xie, Yunhan Wang, Zhonghui Yu, Shuai Li, Liuting Li, S. Dong, Hong Wang","doi":"10.1002/admt.202200650","DOIUrl":"https://doi.org/10.1002/admt.202200650","url":null,"abstract":"Additive manufacturing of arbitrary shapes and unique architecture provides remarkable flexibility and simplicity for the preparation of highly complex conformal electronics. This drives up demand for electronic materials with excellent process ability and functionality from one‐step molding of microminiature to large‐scale devices. Herein, a novel method is introduced for fabricating high‐performance barium titanate (BaTiO3)‐polydimethylsiloxane composites based on three‐dimensional (3D)‐printing‐ordered structure of a metamaterial skeleton. When subjected to external mechanical stress, the metamaterial structure facilitates effective stress transfer, resulting in a significantly improved voltage output. In comparison to traditional low‐dimensional ceramic polymer composites, metamaterial‐structured BaTiO3 composites exhibit excellent electromechanical energy conversion properties, thereby enabling tactile imitation applications and mechanical energy harvesting. This study proposes a novel strategy for biological signal identification and implantable self‐powered electronic applications.","PeriodicalId":7200,"journal":{"name":"Advanced Materials & Technologies","volume":"48 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86053440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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