装备机械Pub Date : 2001-12-01DOI: 10.1109/ISEIM.2001.973733
H. Ono, N. Hirai, Y. Ohki
{"title":"Effect of blending on the dielectric breakdown of polyethylene","authors":"H. Ono, N. Hirai, Y. Ohki","doi":"10.1109/ISEIM.2001.973733","DOIUrl":"https://doi.org/10.1109/ISEIM.2001.973733","url":null,"abstract":"Dielectric strength is not lowered by blending two different PEs at 90/spl deg/C, the temperature which is important for power cables. However, the blended PEs show a slightly lower breakdown strength at room temperature than the unblended PEs. A larger conduction current and a larger amount of space charge are thought to be responsible for this decrease in breakdown strength.","PeriodicalId":71964,"journal":{"name":"装备机械","volume":"1 1","pages":"574-577"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89994604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
装备机械Pub Date : 2001-12-01DOI: 10.1109/ISEIM.2001.973763
M. Fujimaki, S. Tokuhiro, T. Nakanishi, K. Nomura, Y. Ohki, K. Imamura
{"title":"Ultraviolet-photon-induced paramagnetic centers in Ge and Sn co-doped silica glass","authors":"M. Fujimaki, S. Tokuhiro, T. Nakanishi, K. Nomura, Y. Ohki, K. Imamura","doi":"10.1109/ISEIM.2001.973763","DOIUrl":"https://doi.org/10.1109/ISEIM.2001.973763","url":null,"abstract":"We have examined paramagnetic centers and absorption bands in the visible-to-uv region in Ge and Sn co-doped SiO/sub 2/ glass irradiated with UV photons from a KrF excimer laser. The generation mechanisms, optical properties, and roles in the photo-induced refractive index change of the paramagnetic centers are discussed.","PeriodicalId":71964,"journal":{"name":"装备机械","volume":"35 1","pages":"665-668"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76645061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
装备机械Pub Date : 2001-12-01DOI: 10.1109/ISEIM.2001.973591
H. Sato, H. Kato, Y. Ohki, K. Seol, T. Noma
{"title":"Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition","authors":"H. Sato, H. Kato, Y. Ohki, K. Seol, T. Noma","doi":"10.1109/ISEIM.2001.973591","DOIUrl":"https://doi.org/10.1109/ISEIM.2001.973591","url":null,"abstract":"We have investigated the conduction mechanism of a-SiO/sub x/N/sub y/:H and a-SiN/sub z/:H films by measuring the conduction current and the capacitance-voltage characteristics in MIS structure capacitors. The low-field conduction is attributable to an Ohmic process and the high-field conduction is attributable to Poole-Frenkel emission for both materials. From the similarity of many aspects of the conduction process, it is considered that the carriers are transported via the same sites associated with Si-N bonds located in the forbidden band in both materials.","PeriodicalId":71964,"journal":{"name":"装备机械","volume":"14 1","pages":"148-151"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81680439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
装备机械Pub Date : 2001-12-01DOI: 10.1109/ISEIM.2001.973568
N. Kashio, H. Kato, Y. Ohki
{"title":"Photoluminescence properties of hydrogenated amorphous silicon nitride","authors":"N. Kashio, H. Kato, Y. Ohki","doi":"10.1109/ISEIM.2001.973568","DOIUrl":"https://doi.org/10.1109/ISEIM.2001.973568","url":null,"abstract":"We have investigated time-resolved PL spectra and nanosecond-order PL decay characteristics in silicon-rich a-SiN/sub x/:H film and discussed recombination processes of photogenerated carriers. The PL peak energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiN/sub x/:H films.","PeriodicalId":71964,"journal":{"name":"装备机械","volume":"11 1","pages":"79-82"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79041145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
装备机械Pub Date : 2001-12-01DOI: 10.1109/ISEIM.2001.973708
H. Kato, T. Nango, T. Miyagawa, T. Katagiri, Y. Ohki, K. Seol, M. Takiyama
{"title":"Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition","authors":"H. Kato, T. Nango, T. Miyagawa, T. Katagiri, Y. Ohki, K. Seol, M. Takiyama","doi":"10.1109/ISEIM.2001.973708","DOIUrl":"https://doi.org/10.1109/ISEIM.2001.973708","url":null,"abstract":"According to the guideline of manufacturing processes on the future CMOS technology, the thickness of the gate silicon dioxide is expected to be scaled down to less-than-1 nm in the near future. In this region, silicon dioxide would not maintain the insulating property, since direct tunneling dominates the leakage current. In order to overcome this difficulty, several attempts to increase the physical thickness, while keeping the equivalent silicon dioxide thickness, have been carried out using materials with a higher permittivity. Future gate dielectric materials with a higher permittivity have been requested to possess excellent insulating property, excellent thermal stability at the interface layer with a silicon substrate or electrode, a large band gap with a favorable band structure, and adaptability for semiconductor process technology. We have tried to deposit hafnium silicate films by plasma-enhanced chemical vapor deposition (PECVD), and have successfully obtained good films. In this report, we briefly describe the developed deposition method and discuss electrical properties and chemical structure of the deposited films.","PeriodicalId":71964,"journal":{"name":"装备机械","volume":"118 1","pages":"483-486"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77404266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
装备机械Pub Date : 2001-12-01DOI: 10.1109/ISEIM.2001.973564
A. Yamaguchi, N. Hirai, Y. Ohki
{"title":"On the mechanism of recovery voltage in a dielectric solid - proposal of a simple equation","authors":"A. Yamaguchi, N. Hirai, Y. Ohki","doi":"10.1109/ISEIM.2001.973564","DOIUrl":"https://doi.org/10.1109/ISEIM.2001.973564","url":null,"abstract":"The environmental conditions under which dielectric materials are used have become more and more serious with the progress of science, and demands for a higher reliability and a higher stability of dielectric materials have become even stronger. Therefore, a proper method to diagnose the condition of dielectric materials is required. Recently, diagnosis of degradation of power cables or transformer bushings by recovery voltage measurement and the theoretical background of recovery voltage have been discussed. In this paper, we propose a simple equation of recovery voltage based on an equivalent circuit and a theoretical equation that we proposed in our previous paper and show the validity of this simple equation by comparing experimental data with theoretical curves. The capacitance and the resistance associated with traps in the dielectric solid are also estimated.","PeriodicalId":71964,"journal":{"name":"装备机械","volume":"43 1","pages":"67-70"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87331830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
装备机械Pub Date : 2001-12-01DOI: 10.1109/ISEIM.2001.973761
T. Ito, H. Nonaka, Y. Ohki, K. Seol, I. Choi, Yong-Tea Kim
{"title":"Effect of photon irradiation on SBT films","authors":"T. Ito, H. Nonaka, Y. Ohki, K. Seol, I. Choi, Yong-Tea Kim","doi":"10.1109/ISEIM.2001.973761","DOIUrl":"https://doi.org/10.1109/ISEIM.2001.973761","url":null,"abstract":"Simultaneous laser irradiation during thermal annealing is effective to lower the crystallization temperature of the perovskite structure. However, the surface of a Sr/sub 2/Bi/sub 2/Ta/sub 2/O/sub 9/ (SBT) film with the perovskite structure obtained by laser irradiation is not as smooth as one obtained by thermal annealing. In order to fabricate SBT films that can be used for ferroelectric memories, we need to reduce the surface damage. In the present research, the effect of photon irradiation on the surface damage of SBT is investigated.","PeriodicalId":71964,"journal":{"name":"装备机械","volume":"7 1","pages":"661-664"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79968782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
装备机械Pub Date : 2001-12-01DOI: 10.1109/ISEIM.2001.973723
T. Kubota, S. Yokoyama, T. Nakahama, S. Mashiko, Y. Noguchi, K. Hashizume, T. Manaka, M. Iwamoto
{"title":"Electrical properties of organic single electron tunneling device","authors":"T. Kubota, S. Yokoyama, T. Nakahama, S. Mashiko, Y. Noguchi, K. Hashizume, T. Manaka, M. Iwamoto","doi":"10.1109/ISEIM.2001.973723","DOIUrl":"https://doi.org/10.1109/ISEIM.2001.973723","url":null,"abstract":"We made Au/PI/(Rh-G2 + PI)/PI/Au junctions and Au/PI/(Rh-G2 + PI)/PI/Al junctions with an artificially layered structure containing rhodamine dendrite macromolecules (Rh-G2), and then observed steps in their I-V characteristic. It is found that the device using organic monomolecule, Rh-G2 dendrite molecule, function as a single electron tunnel device. It was concluded that the presence of metal/organic interfacial states made a significant contribution to the I-V characteristics of these junctions.","PeriodicalId":71964,"journal":{"name":"装备机械","volume":"22 1","pages":"541-544"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81582567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
装备机械Pub Date : 2001-11-19DOI: 10.1109/ISEIM.2001.973778
Li Yonggang, L. Heming, Zhao-hua
{"title":"Research on monitoring and fault diagnostic system of turbine-generator","authors":"Li Yonggang, L. Heming, Zhao-hua","doi":"10.1109/ISEIM.2001.973778","DOIUrl":"https://doi.org/10.1109/ISEIM.2001.973778","url":null,"abstract":"In this paper, based on the systematic analysis on the structure, operation, and fault of a large generator, the software of MDST (monitoring and diagnosis system) is designed and compiled, and it is applied on the spot. The software MDST consults the national standard and the departmental standard and the correlative prescription of regulation of generator on operation, experiment, examination and reparation, and quality verification etc., and under full consideration of the factors, such as functional realization of the software, customer requirements, operator-computer interactive communication, friendly interface, authority partition, and secure and stable operation of the software and so on.","PeriodicalId":71964,"journal":{"name":"装备机械","volume":"41 1","pages":"717-720"},"PeriodicalIF":0.0,"publicationDate":"2001-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74161075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
装备机械Pub Date : 2001-11-19DOI: 10.1109/ISEIM.2001.973628
Du Lin, Sun Caixin, Liao Ruijin, Chen Weigen, Li Jian
{"title":"Transducers for electrical apparatus insulation online monitoring","authors":"Du Lin, Sun Caixin, Liao Ruijin, Chen Weigen, Li Jian","doi":"10.1109/ISEIM.2001.973628","DOIUrl":"https://doi.org/10.1109/ISEIM.2001.973628","url":null,"abstract":"This paper presents detail analysis on transducers used for online monitoring system for electrical apparatus. Transducers are the key components of the online monitoring system; they play important roles on the stability and accuracy of monitoring results. Two types of transducers are discussed in this paper - the transducers used for dielectric loss angle measurement and the ones for partial discharge measurement. Basically their characteristics can be derivative from a uniform equation according to the materials used and structure, but the aspect differs from the frequency domain and time domain analysis. The transfer function of the transducers is put forward, the phase-frequency, amplitude-frequency characteristics are discussed and the time-domain response is concluded from unit pulse response convolution. The structure, shielding are also mentioned. For the characteristics may be changed with the temperature shift, the error analysis is implemented to compensate the result. The results of the field test have proven the stability and feasibility, and these transducers can be used for electrical apparatus insulation online monitoring.","PeriodicalId":71964,"journal":{"name":"装备机械","volume":"8 1","pages":"237-240"},"PeriodicalIF":0.0,"publicationDate":"2001-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75558623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}